AOS Semiconductor Product Reliability Report AO3460, rev C Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com This AOS product reliability report summarizes the qualification result for AO3460. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AO3460 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. V. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation Physical testing I. Product Description: The AO3460 uses advanced trench technology to provide excellent RDS(ON) and low gate charge, and operation with gate voltages as low as 4.5V, in the small SOT-23 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. It is ESD protected. -RoHS Compliant -Halogen Free Detailed information refers to datasheet. II. Die / Package Information: AO3460 Standard sub-micron 60V N-channel MOSFET Package Type 3 leads SOT23 Lead Frame Cu Die Attach Ag Epoxy Bonding Wire Au wire Mold Material Epoxy resin with silica filler MSL (moisture sensitive level) Level 1 based on J-STD-020 Process Note * based on information provided by assembler and mold compound supplier III. Result of Reliability Stress for AO3460 Test Item Test Condition Time Point MSL Precondition 168hr 85°c /85%RH +3 cycle reflow@260°c Temp = 150 c, Vgs=100% of Vgsmax HTRB HAST HTGB Pressure Pot Temperature Cycle Lot Attribution Total Sample size Number of Failures - 39 lots 7249pcs 0 JESD22A113 168hrs 500 hrs 1000 hrs 2 lots 4 lots 2 lots 616pcs 0 JESD22A108 Temp = 150 c, Vds=80% of Vdsmax 168hrs 500 hrs 1000 hrs (Note A*) 2 lots 4 lots 2 lots 77pcs / lot 616pcs 0 JESD22A108 130 +/- 2c, 85%RH, 33.3 psi, Vgs = 100% of Vgs max 121c, 29.7psi, RH=100% 100 hrs (Note A*) 38 lots 77pcs / lot 2090 pcs 0 JESD22A110 (Note A*) 55 pcs / lot 2156 pcs 0 JESD22A102 -65c to 150c, air to air 250 / 500 cycles (Note A*) 39 lots 77 pcs / lot 3003 pcs 0 JESD22A104 (Note A*) 77 pcs / lot 96 hrs 28 lots Standard Note A: The reliability data presents the available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 5 MTTF = 21493 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AO3460). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] 9 = 1.83 x 10 / [2x (4x77x168+8x77x500+4x77x1000) x258] = 5 9 8 MTTF = 10 / FIT = 1.88 x 10 hrs = 21493 years Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°c) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s )] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u = The use junction temperature in degree (Kelvin), K = C+273.16 -5 K = Boltzmann’s constant, 8.617164 X 10 eV / K