AOSMD AON2405

AON2405
20V P-Channel MOSFET
General Description
Product Summary
The AON2405 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=-4.5V)
-20V
-8A
VDS
RDS(ON) (at VGS =-4.5V)
< 32mΩ
RDS(ON) (at VGS =-2.5V)
< 41mΩ
RDS(ON) (at VGS =-1.8V)
< 56mΩ
RDS(ON) (at VGS =-1.5V)
< 70mΩ
DFN 2x2B
Top View
S
D
Bottom View
D
D
D
Pin 1
S
D
Pin 1
G
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current G
Pulsed Drain Current
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Rev 2 : Sep. 2012
Steady-State
A
A
2.8
W
1.8
TJ, TSTG
Symbol
t ≤ 10s
V
-32
PD
TA=70°C
±8
-6
IDM
TA=25°C
Units
V
-8
ID
TA=70°C
C
Maximum
-20
RθJA
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-55 to 150
Typ
37
66
°C
Max
45
80
Units
°C/W
°C/W
Page 1 of 5
AON2405
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-20
-1
TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS=±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250µA
-0.3
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-32
nA
-0.9
V
26
32
35
43
VGS=-2.5V, ID=-5A
32
41
mΩ
VGS=-1.8V, ID=-2A
41
56
mΩ
VGS=-1.5V, ID=-2A
46
70
mΩ
23
gFS
Forward Transconductance
VDS=-5V, ID=-8A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
µA
±100
TJ=125°C
Coss
Units
-0.65
VGS=-4.5V, ID=-8A
Static Drain-Source On-Resistance
Max
V
VDS=-20V, VGS=0V
IGSS
RDS(ON)
Typ
A
-0.62
S
-1
V
-4.5
A
1025
pF
167
pF
119
pF
11
Ω
13
VGS=-4.5V, VDS=-10V, ID=-8A
mΩ
18
nC
2
nC
Qgd
Gate Drain Charge
3.4
nC
tD(on)
Turn-On DelayTime
7
ns
tr
Turn-On Rise Time
28
ns
95
ns
46
ns
15
ns
nC
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Qrr
VGS=-4.5V, VDS=-10V,
RL=1.25Ω, RGEN=3Ω
IF=-8A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/µs
4
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2 : Sep. 2012
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Page 2 of 5
AON2405
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
25
-4.5V
VDS=-5V
-4V
50
20
-3V
40
15
-ID(A)
-ID (A)
-2.5V
30
-2V
10
VGS=-1.5V
5
20
125°C
10
25°C
0
0
0
1
2
3
4
0
5
1
1.5
2
2.5
3
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
80
60
VGS=-1.8V
40
VGS=-2.5V
20
VGS=-4.5V
Normalized On-Resistance
1.6
VGS=-1.5V
RDS(ON) (mΩ
Ω)
0.5
VGS=-1.8V
ID=-5A
VGS=-2.5V
ID=-6A
1.4
17
5
2
10
=-4.5V
1.2
VGS
ID=-8A
1
0.8
0
0
1
2
3
0
4
5
6
7
8
9 10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
1.0E+02
80
ID=-8A
1.0E+01
-IS (A)
70
RDS(ON) (mΩ
Ω)
60
40
125°C
1.0E+00
1.0E-01
50
125°C
1.0E-02
25°C
40
1.0E-03
30
1.0E-04
25°C
20
1.0E-05
0
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 2 : Sep. 2012
2
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON2405
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
1400
VDS=-10V
ID=-8A
Ciss
1200
1000
Capacitance (pF)
-VGS (Volts)
4
3
2
800
600
Coss
400
1
200
0
0
3
6
9
12
Qg (nC)
Figure 7: Gate-Charge Characteristics
15
0
5
10
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
20
200
100.0
10µs
10µs 100µs
RDS(ON)
limited
1ms
10ms
1.0
DC
17
5
2
10
120
TJ(Max)=150°C
TA=25°C
0.1
TJ(Max)=150°C
TA=25°C
160
Power (W)
10.0
-ID (Amps)
Crss
0
80
40
0.0
0
0.01
0.1
1
-VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18Junction-toFigure 10: Single Pulse Power Rating
Ambient (Note H)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=80°C/W
0.1
PD
0.01
Ton
Single Pulse
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 2 : Sep. 2012
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Page 4 of 5
AON2405
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 2 : Sep. 2012
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 5 of 5