Datasheet

AON2240
40V N-Channel MOSFET
General Description
Product Summary
The AON2240 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=10V)
40V
8A
RDS(ON) (at VGS =10V)
< 21mΩ
RDS(ON) (at VGS =4.5V)
< 29mΩ
VDS
DFN 2x2B
Top View
S
D
Bottom View
D
D
D
S
Pin 1
D
G
Pin 1
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current G
Pulsed Drain Current C
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Rev 0 : Dec 2011
Steady-State
A
2.8
W
1.8
TJ, TSTG
Symbol
t ≤ 10s
V
32
PD
TA=70°C
±20
6
IDM
TA=25°C
A
Units
V
8
ID
TA=100°C
Maximum
40
RθJA
www.aosmd.com
-55 to 150
Typ
37
66
°C
Max
45
80
Units
°C/W
°C/W
Page 1 of 5
AON2240
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS，ID=250µA
1.4
ID(ON)
On state drain current
VGS=10V, VDS=5V
32
TJ=55°C
TJ=125°C
VGS=4.5V, ID=4A
±100
nA
1.9
2.4
V
16.8
21
24.5
31
22.6
29
mΩ
1
V
3.5
A
A
gFS
Forward Transconductance
VDS=5V, ID=8A
33
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.75
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=20V, f=1MHz
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=20V, ID=8A
VGS=10V, VDS=20V, RL=2.5Ω,
RGEN=3Ω
1
mΩ
S
415
pF
112
pF
11
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Qg(4.5V)
µA
5
VGS=10V, ID=8A
Units
V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
40
VDS=40V, VGS=0V
IDSS
RDS(ON)
Typ
pF
Ω
2.2
3.5
6.5
12
nC
3
6
nC
1.2
nC
1.1
nC
4
ns
3
ns
15
ns
tf
Turn-Off Fall Time
2
ns
trr
Body Diode Reverse Recovery Time
IF=8A, dI/dt=100A/µs
12.5
Qrr
Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs
3.5
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Dec. 2011
www.aosmd.com
Page 2 of 5
AON2240
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
10V
4.5V
VDS=5V
25
15
3.5V
ID(A)
ID (A)
20
15
10
3V
10
125°C
5
25°C
5
VGS=2.5V
0
0
0
1
2
3
4
0
5
2
3
4
5
6
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
50
Normalized On-Resistance
1.8
40
RDS(ON) (mΩ)
1
30
VGS=4.5V
20
VGS=10V
10
1.6
VGS=10V
ID=8A
1.4
1.2
VGS=4.5V
ID=4A
1
0.8
0
0
4
8
0
12
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E+02
60
ID=8A
1.0E+01
IS (A)
50
RDS(ON) (mΩ)
40
125°C
1.0E+00
1.0E-01
30
125°C
25°C
1.0E-02
20
1.0E-03
10
25°C
1.0E-04
0
2
4
6
8
10
1.0E-05
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Dec 2011
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AON2240
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
600
VDS=20V
ID=8A
500
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
400
300
200
Coss
2
100
0
Crss
0
0
2
4
6
8
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
30
40
VDS (Volts)
Figure 8: Capacitance Characteristics
10000
100.0
RDS(ON)
limited
1000
100µs
1.0
1ms
TJ(Max)=150°C
TC=25°C
10ms
Power (W)
10.0
TA=25°C
10µs
10µs
ID (Amps)
10
100
10
0.1
DC
0.0
0.01
0.1
1
10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note H)
ZθJA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=80°C/W
0.1
Single Pulse
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Dec 2011
www.aosmd.com
Page 4 of 5
AON2240
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
+
VDC
90 %
Vdd
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D iode R ecovery T est C ircuit & W aveform s
Q rr = -
V ds +
DUT
V ds -
Isd
V gs
Ig
Rev 0: Dec 2011
Idt
V gs
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
www.aosmd.com
Page 5 of 5