Datasheet

AON2410
30V N-Channel MOSFET
General Description
Product Summary
The AON2410 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=4.5V)
30V
8A
RDS(ON) (at VGS = 4.5V)
< 21mΩ
RDS(ON) (at VGS = 2.5V)
< 28mΩ
VDS
DFN 2x2B
Top View
S
D
Bottom View
D
D
D
S
Pin 1
D
Pin 1
G
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current G
VGS
TA=25°C
Pulsed Drain Current C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Rev 0 : Dec 2011
Steady-State
A
A
32
W
1.8
TJ, TSTG
Symbol
t ≤ 10s
V
2.8
PD
TA=70°C
±12
6
IDM
TA=25°C
Units
V
8
ID
TA=70°C
Maximum
30
RθJA
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-55 to 150
Typ
37
66
°C
Max
45
80
Units
°C/W
°C/W
Page 1 of 5
AON2410
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS，ID=250µA
0.6
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
32
TJ=55°C
VGS=4.5V, ID=8A
TJ=125°C
VGS=2.5V, ID=4A
±100
nA
1.07
1.5
V
17.1
21
26
32
21.2
28
A
Forward Transconductance
VDS=5V, ID=8A
50
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
gFS
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Units
V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
mΩ
mΩ
S
1
V
3.5
A
813
pF
VGS=0V, VDS=15V, f=1MHz
98
pF
VGS=0V, VDS=0V, f=1MHz
2.3
3.5
8
12
VGS=4.5V, VDS=15V, ID=8A
1.2
nC
56
SWITCHING PARAMETERS
Qg
Total Gate Charge
pF
Ω
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
2.6
nC
tD(on)
Turn-On DelayTime
3
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
3
ns
26
ns
tf
Turn-Off Fall Time
3.5
ns
trr
Body Diode Reverse Recovery Time
Qrr
IF=8A, dI/dt=100A/µs
10
Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs
2.4
ns
nC
VGS=4.5V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Dec. 2011
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Page 2 of 5
AON2410
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
20
10V
3V
VDS=5V
16
30
2.5V
4.5V
ID(A)
ID (A)
12
20
8
125°C
10
4
25°C
VGS=1.5V
0
0
0
1
2
3
4
0
5
35
1
1.5
2
2.5
3
Normalized On-Resistance
1.8
30
RDS(ON) (mΩ
Ω)
0.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=2.5V
25
20
15
VGS=4.5V
VGS=4.5V
ID=8A
1.6
1.4
17
5
2
VGS=2.5V
10
ID=4A
1.2
1
0.8
10
0
5
10
0
15
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
40
1.0E+02
ID=8A
1.0E+01
35
40
IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
125°C
30
25
20
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
15
25°C
1.0E-04
1.0E-05
10
0
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0 : Dec. 2011
2
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON2410
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
1200
VDS=15V
ID=8A
1000
Ciss
Capacitance (pF)
VGS (Volts)
4
3
2
800
600
400
Coss
1
200
0
0
0
2
4
6
8
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
10000
100.0
10µs
RDS(ON)
limited
100µs
1ms
1.0
10ms
0.1
TA=25°C
1000
TJ(Max)=150°C
TA=25°C
Power (W)
10.0
ID (Amps)
Crss
17
5
2
10
100
DC
10
0.0
0.01
0.1
1
VDS (Volts)
10
1
100
0.1
10 0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
1E-05
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=80°C/W
0.1
0.01
Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0 : Dec. 2011
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Page 4 of 5
AON2410
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0 : Dec. 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 5 of 5