Datasheet

AON2420
30V N-Channel AlphaMOS
General Description
Product Summary
VDS
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
ID (at VGS=10V)
30V
8A
RDS(ON) (at VGS =10V)
< 11.7mΩ
RDS(ON) (at VGS =4.5V)
< 17.5mΩ
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
DFN 2x2B
Top View
S
D
Bottom View
D
D
D
S
Pin 1
D
G
Pin 1
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current G
Pulsed Drain Current
VDS Spike
Power Dissipation A
C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Rev0 : April 2012
36
Steady-State
V
W
1.8
TJ, TSTG
Symbol
t ≤ 10s
A
2.8
PD
Junction and Storage Temperature Range
V
32
VSPIKE
TA=70°C
±20
6
IDM
100ns
TA=25°C
Units
V
8
ID
TA=100°C
Maximum
30
RθJA
-55 to 150
Typ
37
66
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°C
Max
45
80
Units
°C/W
°C/W
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AON2420
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=8A
TJ=125°C
VGS=4.5V, ID=6A
gFS
Forward Transconductance
VDS=5V, ID=8A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=15V, ID=8A
µA
5
1.2
1.7
Units
V
1
TJ=55°C
VGS(th)
Max
30
VDS=30V, VGS=0V
IGSS
Coss
Typ
1.8
±100
nA
2.2
V
9.6
11.7
13
15.8
13.6
17.5
mΩ
1
V
3.5
A
41
0.7
mΩ
S
552
pF
227
pF
28
pF
3.4
4.8
Ω
8.9
12
nC
4.3
5.8
nC
1.5
nC
Qgd
Gate Drain Charge
1.7
nC
tD(on)
Turn-On DelayTime
4.8
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
3.3
ns
18.5
ns
tf
Turn-Off Fall Time
4.0
ns
trr
Body Diode Reverse Recovery Time
Qrr
IF=8A, dI/dt=100A/µs
13.2
Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs
3.2
ns
nC
VGS=10V, VDS=15V, RL=1.9Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
B. The Power dissipation PD is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0 : April 2012
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Page 2 of 5
AON2420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
60
10V
VDS=5V
50
4.5V
60
40
ID(A)
ID (A)
4V
40
30
3.5V
125°C
20
25°C
20
VGS=3.0V
10
0
0
0
1
2
3
4
0
5
2
3
4
5
6
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
20
Normalized On-Resistance
1.6
16
RDS(ON) (mΩ)
1
VGS=4.5V
12
8
VGS=10V
4
VGS=10V
ID=8A
1.4
1.2
VGS=4.5V
ID=6A
1
0.8
0
0
5
10
15
0
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
30
±20
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+01
25
ID=8A
1.0E+00
20
1.0E-01
IS (A)
RDS(ON) (mΩ)
125°C
15
10
25°C
125°C
1.0E-02
1.0E-03
25°C
5
1.0E-04
0
0
2
4
6
8
10
1.0E-05
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev0 : April 2012
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON2420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
800
VDS=15V
ID=8A
8
Ciss
Capacitance (pF)
VGS (Volts)
600
6
4
400
Coss
200
2
Crss
0
0
0
2
4
6
8
10
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
10
15
30
TA=25°C
10µs
10µs
RDS(ON)
limited
1000
100µs
1ms
1.0
DC
0.1
10ms
Power (W)
ID (Amps)
25
10000
100.0
10.0
20
VDS (Volts)
Figure 8: Capacitance Characteristics
100
TJ(Max)=150°C
TC=25°C
0.0
0.01
0.1
10
1
10
1
0.00001
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
0.1
10
Pulse Width (s)
1000
30 11: Single Pulse Power Rating Junction-to-Ambient
Figure
±20
(Note H)
ZθJA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=80°C/W
0.1
Single Pulse
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note H)
Rev0 : April 2012
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Page 4 of 5
AON2420
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev0 : April 2012
Vgs
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 5 of 5