AON2420 30V N-Channel AlphaMOS General Description Product Summary VDS • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant ID (at VGS=10V) 30V 8A RDS(ON) (at VGS =10V) < 11.7mΩ RDS(ON) (at VGS =4.5V) < 17.5mΩ Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial DFN 2x2B Top View S D Bottom View D D D S Pin 1 D G Pin 1 G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current G Pulsed Drain Current VDS Spike Power Dissipation A C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Rev0 : April 2012 36 Steady-State V W 1.8 TJ, TSTG Symbol t ≤ 10s A 2.8 PD Junction and Storage Temperature Range V 32 VSPIKE TA=70°C ±20 6 IDM 100ns TA=25°C Units V 8 ID TA=100°C Maximum 30 RθJA -55 to 150 Typ 37 66 www.aosmd.com °C Max 45 80 Units °C/W °C/W Page 1 of 5 AON2420 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8A TJ=125°C VGS=4.5V, ID=6A gFS Forward Transconductance VDS=5V, ID=8A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=15V, ID=8A µA 5 1.2 1.7 Units V 1 TJ=55°C VGS(th) Max 30 VDS=30V, VGS=0V IGSS Coss Typ 1.8 ±100 nA 2.2 V 9.6 11.7 13 15.8 13.6 17.5 mΩ 1 V 3.5 A 41 0.7 mΩ S 552 pF 227 pF 28 pF 3.4 4.8 Ω 8.9 12 nC 4.3 5.8 nC 1.5 nC Qgd Gate Drain Charge 1.7 nC tD(on) Turn-On DelayTime 4.8 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 3.3 ns 18.5 ns tf Turn-Off Fall Time 4.0 ns trr Body Diode Reverse Recovery Time Qrr IF=8A, dI/dt=100A/µs 13.2 Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs 3.2 ns nC VGS=10V, VDS=15V, RL=1.9Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. B. The Power dissipation PD is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0 : April 2012 www.aosmd.com Page 2 of 5 AON2420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 60 10V VDS=5V 50 4.5V 60 40 ID(A) ID (A) 4V 40 30 3.5V 125°C 20 25°C 20 VGS=3.0V 10 0 0 0 1 2 3 4 0 5 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 20 Normalized On-Resistance 1.6 16 RDS(ON) (mΩ) 1 VGS=4.5V 12 8 VGS=10V 4 VGS=10V ID=8A 1.4 1.2 VGS=4.5V ID=6A 1 0.8 0 0 5 10 15 0 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 30 ±20 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+01 25 ID=8A 1.0E+00 20 1.0E-01 IS (A) RDS(ON) (mΩ) 125°C 15 10 25°C 125°C 1.0E-02 1.0E-03 25°C 5 1.0E-04 0 0 2 4 6 8 10 1.0E-05 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev0 : April 2012 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AON2420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 800 VDS=15V ID=8A 8 Ciss Capacitance (pF) VGS (Volts) 600 6 4 400 Coss 200 2 Crss 0 0 0 2 4 6 8 10 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 30 TA=25°C 10µs 10µs RDS(ON) limited 1000 100µs 1ms 1.0 DC 0.1 10ms Power (W) ID (Amps) 25 10000 100.0 10.0 20 VDS (Volts) Figure 8: Capacitance Characteristics 100 TJ(Max)=150°C TC=25°C 0.0 0.01 0.1 10 1 10 1 0.00001 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.1 10 Pulse Width (s) 1000 30 11: Single Pulse Power Rating Junction-to-Ambient Figure ±20 (Note H) ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=80°C/W 0.1 Single Pulse 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note H) Rev0 : April 2012 www.aosmd.com Page 4 of 5 AON2420 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev0 : April 2012 Vgs L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 5 of 5