Sensitive Gate Silicon Controlled Rectifiers

WCD8C60S
Sensitive Gate
Silicon Controlled Rectifiers
Features
�
Sensitive gate trigger current:IGT=200µA maximum
�
Low On-State Voltage :VTM=1.2(typ.) @ ITM)
�
Low reverse and forward blocking current:
IDRM/IRRM=1mA@TC=125℃
�
Low holding current :IH=5mA maximum
General Description
Sensitive gate triggering SCR is suitable for the application where gate
current limited such as microcontrollers, logic integrated circuits,small
motor control, gate driver for large SCR,sensing and detecting
circuits.general purpose switching and phase control applications
Absolute Maximum Ratings (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Value
Units
VDRM/VRRM
Repetitive Peak Off-State Voltage
(Note(1)
600
V
IT(AV)
Average On-State Current(180° Conduction Angle)
TI =110 °C
5
A
IT(RMS)
R.M.S On-State Current(180° Conduction Angle)
TI =110 °C
8
A
tp=8.3ms
73
ITSM
Non Repetitive Surge Peak on-state Current
tp=10ms
70
tp=10ms
24.5
A 2s
TJ=125 °C
50
A/㎲
I2t
I2t Valuefor Fusing
A
Critical rate of rise of on-state current
di/dt
ITM=2A;IG=10mA; dIG/dt=100A/µs
PG(AV)
Average Gate Power Dissipation
TJ=125 °C
1
W
IFGM
Peak Gate Current
TJ=125 °C
4
A
VRGM
Reverse Peak Gate Voltage
TJ=125 °C
5
V
TJ
Junction Temperature
-40~125
°C
TSTG
Storage Temperature
-40~150
°C
Note1:Although not recommended,off-state Voltages up to 800V may be applied without damage,but the thyristor may
switch to the on-stage.The rate of rise of current should not exceed15A/µs.
Thermal Characteristics
Parameter
Symbol
Value
Min
Typ
Max
Units
RθJc
Thermal Resistance Junction to Case
-
-
20
℃/W
RθJA
Thermal Resistance Junction to Ambient
-
-
70
℃/W
Rev.A Oct.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WCD8C60S
Electrical Characteristics (TJ=25℃ ,R
Symbol
IDRM/IRRM
VTM
IGT
VGT
VGD
dv/dt
GK=1KΩ
unless otherwise specified)
Characteristics
Min
Off-state leakage current
TC=25℃
(VAK=VDRM/VRRM)
TC=125℃
Forward "On"voltage (ITM=16A tp=380µs)
(Note2.1)
Gate Trigger Current(continuous dc)
(VAK=12Vdc,RL=140Ω)
(Note2.2)
Gate Trigger Voltage (continuous dc)
(VAK=12Vdc,RL=140Ω)
(Note2.2)
Gate threshold Voltage
(VD=12VDRM RL=3.3KΩ RGK=220Ω)
Critical Rate of Rise Off-State Voltage
(VD=0.67VDRM; RGK=220Ω)
(Note2.1)
TJ=125℃
-
Value
Units
Typ Max
-
5
μA
1
mA
-
1.2
1.6
V
-
-
200
μA
-
-
0.8
V
0.1
-
-
V
5
-
-
V/㎲
IH
Holding Current(VD=12V;IGT=0.5mA)
-
2
5
mA
IL
Latching Current(VD=12V;IGT=0.5mA)
-
2
6
mA
Rd
Dynamic resistance
-
-
46
mΩ
TJ=125℃
*Notes:
2.1 Pulse Width ≤1.0ms,Duty cycle≤1%
2.2 RGK Current is not Included in measurement.
2/5
Steady, keep you advance
WCD8C60S
0
Fig.1
Fig.1Maximum average power dissipation
versus average on-state current
Fig. 3Surge peak on-state current versus
Number of cycles.
Fig.5
Fig.5Non-repetitive surge peak on-state current
for a sinusoidal pulse with width Tp<10ms and
corresponding value of l2t
Fig .2 Average and D.C.on-state current
versus ambient temperature (device mounted
on FR4 with recommended pad layont
Fig. 4On-state Characteristics (maximum values)
Fig.6
Fig.6Relative variation of gate trigger current
and holding versus junction temperature
3/5
Steady, keep you advance
WCD8C60S
7Relative variation of dv/dt immunity
Fig.
Fig.7
versus gate-cathode resistance (typical
values)
Fig.8
Fig.8Relative variation of dv/dt immunity
versus gate-cathode capacitance (typical
values)
Fig.8
Fig.8Thermal Resistance junction to
ambient Versus copper surface under tab
(Epoxy printedCircuit board FR4,copper
thickness:35µm)
4/5
Steady, keep you advance
WCD8C60S
TO
-252 Package Dimension
TO-252
Unit: mm
5/5
Steady, keep you advance