MCR100-8 Sensitive Gate Silicon Controlled Rectifiers Features ■ Sensitive gate trigger current: IGT=200uA maximum ■ Low on-state voltage: VTM=1.2(typ.)@ ITM ■ Low reverse and forward blocking current: IDRM/IPRM=100uA@TC=125℃ ■ Low holding current: IH=5mA maximum General Description Sensitive triggering SCR is suitable for the application where gate current limited such as microcontrollers, logic integrated circuits, small motor control, gate driver for large SCR, sensing and detecting circuits. General purpose switching and phase control applications Absolute Maximum Ratings (Tj=25℃ unless otherwise specified) Symbol Parameter VDRM/VRRM Value Units 600 V TI=85℃ 0.8 A TI=85℃ 0.5 A Repetitive peak off-state voltage Note(1) o IT(RMS) RMS on-state current (180 conduction angles) o IT(AV) Average on-state current (80 conduction angles ) ITSM Non repetitive surge peak on-state current tp = 8.3 ms 9 tp = 10 ms 8 tp = 8.3 ms 0.41 A2s 0.1 W A I2t I²t Value for fusing PGM Peak gate power dI/dt Critical rate of rise of on-state current ITM = 2A; IG = 10mA; dIG/dt = 100mA/µs TJ=125℃ 50 A/μs PG(AV) Average gate power dissipation TA=25℃ 0.01 W IFGM Peak gate current TA=25℃ 1 A VRGM Peak gate voltage TA=25℃ 5 V TJ, Junction temperature -40~125 ℃ Tstg Storage temperature -40~150 ℃ Note1: Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.The rate of rise of current should not exceed 15 A/µs. Thermal Characteristics Symbol Parameter Min Value Typ Max Units RQJC Thermal resistance, Junction-to-Case - - 75 ℃/W RQJA Thermal resistance, Junction-to-Ambient - - 200 ℃/W Ordering Information Order codes Package Marking Halogen Free Packaging MCR100-8 TO126 100-8 NO Tube MCR100-8-T TO126 100-8 NO Reel Rev. B2 Jun.2009 Copyright @ WinSemi Microeletronics Co., Ltd., All rights reserved. T21-2 MCR100-8 Electrical Characteristics (TJ = 25°C, RGK = 1 kΩ unless otherwise specified) Characteristics Symbol IDRM/IRRM (VAK= VDRM/VRRM) Forward “On” voltage VTM Tc=25℃ off-state leakage current VGD Max - - 1 Unit μA 100 (ITM = 1A tp = 380μs) (Note2.1) (VAK = 7 Vdc, RL = 100 Ω) 1.2 1.7 V 15 - 200 μA - - 0.8 V 0.2 - - V 500 800 - (Note2.2) (VAK = 7 Vdc, RL = 100 Ω) Gate threshold Voltage (Note2.1) Voltage Rate of Rise Off-State Voltage (Note2.2) Gate Trigger Voltage (Continuous dc) VGT Typ. Tc=125℃ Gate trigger current (continuous dc) IGT Min TJ=125℃ dv/dt V/μs (VD=0.67VDRM ;exponential waveform) Gate open circuit 25 IH Holding Current (VD = 12 V; IGT = 0.5 mA) - 2 5 mA IL latching current (VD = 12 V; IGT = 0.5 mA) - 2 6 mA Rd Dynamic resistance - - 245 mΩ TJ=125℃ Note 2.1 Pulse width≤1.0ms,duty cycle≤1% 2.2 RGK current is not included in measurement. 2/6 Steady, keep you advance MCR100-8 3/6 Steady, keep you advance MCR100-8 4/6 Steady, keep you advance MCR100-8 TO-92 Package Dimension Unit: mm 5/6 Steady, keep you advance MCR100-8 TO-92 Tape Reel Size SYMBO min. nom max. SYMBOL min. F1/F2 2.25 2.4 2.55 I1 2.5 P 11.7 12.7 13.7 L1 P0 12.4 12.7 13.0 W 17.5 18.0 19.0 P2 5.95 6.35 6.75 W0 5.7 6.0 6.3 H 19.35 20.45 W1 8.5 9.0 9.75 H0 12.5 13.5 W2 25.5 ∆h -1.0 0.0 1.0 6.5 ∆P -1.0 0.0 1.0 T1 0.35 13.0 H1 H2 6 H3 9.5 α 130° 135° 140° T2 nom max. 3.0 11 0.5 0.65 1.44 6/6 Steady, keep you advance