Silicon Controlled Rectifiers

WCD8C60
Silicon Controlled Rectifiers
Features
�
Repetitive Peak Off-State Voltage:600V
�
R.M.S On-State Current (IT(RMS)=8A)
�
Low On-State Voltage(1.4(Typ.)@ITM)
�
Isolation Voltage(VISO=1500V AC)
General Description
Standard gate triggering SCR is fully isolated package suitable for the
application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor control
circuit in power tool, inrush current limit circuit and heating control
system.
Absolute Maximum Ratings (T = 25°C unless otherwise specified)
J
Symbol
Value
Units
VDRM/VRRM
Repetitive Peak Off-State Voltage
Parameter
(Note(1)
600
V
IT(AV)
Average On-State Current(180° Conduction Angle)
TI =85 °C
5
A
IT(RMS)
R.M.S On-State Current(180° Conduction Angle)
TI =85 °C
8
A
tp=8.3ms
73
ITSM
Non Repetitive Surge Peak on-state Current
tp=10ms
70
tp=8.3ms
24.5
A 2s
TJ=125 °C
50
A/㎲
I2t
I2t Valuefor Fusing
A
Critical rate of rise of on-state current
di/dt
ITM=2A;IG=10mA; dIG/dt=100A/µs
PG(AV)
Average Gate Power Dissipation
TJ=125 °C
1
W
IFGM
Peak Gate Current
TJ=125 °C
4
A
VRGM
Reverse Peak Gate Voltage
TJ=125 °C
5
V
VISO
Isolation Breakdown voltage(R.M..S)
A,C.1minute
1500
V
TJ
Junction Temperature
-40~125
°C
TSTG
Storage Temperature
-40~150
°C
Note1:Although not recommended,off-state Voltages up to 800V may be applied without damage,but the thyristor may
switch to the on-stage.The rate of rise of current should not exceed15A/µs.
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RθJc
Thermal Resistance Junction to Case
-
-
20
℃/W
RθJA
Thermal Resistance Junction to Ambient
-
-
70
℃/W
Rev.A Oct.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WCD8C60
Electrical Characteristics (TJ=25℃ ,R
GK=1KΩ
unless otherwise specified)
Symbol
IDRM/IRRM
VTM
IGT
VGT
VGD
dv/dt
Off-state leakage current
TC=25℃
(VAK=VDRM/VRRM)
TC=125℃
Forward "On"voltage (ITM=16A tp=380µs)
(Note2.1)
Gate Trigger Current(continuous dc)
(VAK=12Vdc,RL=140Ω)
(Note2.2)
Gate Trigger Voltage (continuous dc)
(VAK=12Vdc,RL=140Ω)
(Note2.2)
Gate threshold Voltage
(VD=12VDRM RL=3.3KΩ RGK=220Ω)
Critical Rate of Rise Off-State Voltage
(VD=0.67VDRM; RGK=220Ω)
(Note2.1)
TJ=125℃
Min
Value
Typ
Max
-
-
5
μA
2
mA
Units
-
1.4
1.6
V
-
-
15
mA
-
-
1.5
V
0.1
-
-
V
200
-
-
V/㎲
IH
Holding Current(VD=12V;IGT=0.5mA)
-
-
20
mA
IL
Latching Current(VD=12V;IGT=0.5mA)
-
2
6
mA
Rd
Dynamic resistance
-
-
46
mΩ
TJ=125℃
*Notes:
2.1 Pulse Width ≤1.0ms,Duty cycle≤1%
2.2 RGK Current is not Included in measurement.
2/5
Steady, keep you advance
WCD8C60
0
Fig.1
Fig.1Maximum average power dissipation
versus average on-state current
Fig. 3Surge peak on-state current versus
Number of cycles.
Fig.5
Fig.5Non-repetitive surge peak on-state current
for a sinusoidal pulse with width Tp<10ms and
corresponding value of l2t
Fig .2 Average and D.C.on-state current
versus ambient temperature (device mounted
on FR4 with recommended pad layont
Fig. 4On-state Characteristics (maximum values)
Fig.6
Fig.6Relative variation of gate trigger current
and holding versus junction temperature
3/5
Steady, keep you advance
WCD8C60
7Relative variation of dv/dt immunity
Fig.
Fig.7
versus gate-cathode resistance (typical
values)
Fig.8
Fig.8Relative variation of dv/dt immunity
versus gate-cathode capacitance (typical
values)
Fig.8
Fig.8Thermal Resistance junction to
ambient Versus copper surface under tab
(Epoxy printedCircuit board FR4,copper
thickness:35µm)
4/5
Steady, keep you advance
WCD8C60
TO
-252 Package Dimension
TO-252
Unit: mm
5/5
Steady, keep you advance