WCD8C60 Silicon Controlled Rectifiers Features � Repetitive Peak Off-State Voltage:600V � R.M.S On-State Current (IT(RMS)=8A) � Low On-State Voltage(1.4(Typ.)@ITM) � Isolation Voltage(VISO=1500V AC) General Description Standard gate triggering SCR is fully isolated package suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system. Absolute Maximum Ratings (T = 25°C unless otherwise specified) J Symbol Value Units VDRM/VRRM Repetitive Peak Off-State Voltage Parameter (Note(1) 600 V IT(AV) Average On-State Current(180° Conduction Angle) TI =85 °C 5 A IT(RMS) R.M.S On-State Current(180° Conduction Angle) TI =85 °C 8 A tp=8.3ms 73 ITSM Non Repetitive Surge Peak on-state Current tp=10ms 70 tp=8.3ms 24.5 A 2s TJ=125 °C 50 A/㎲ I2t I2t Valuefor Fusing A Critical rate of rise of on-state current di/dt ITM=2A;IG=10mA; dIG/dt=100A/µs PG(AV) Average Gate Power Dissipation TJ=125 °C 1 W IFGM Peak Gate Current TJ=125 °C 4 A VRGM Reverse Peak Gate Voltage TJ=125 °C 5 V VISO Isolation Breakdown voltage(R.M..S) A,C.1minute 1500 V TJ Junction Temperature -40~125 °C TSTG Storage Temperature -40~150 °C Note1:Although not recommended,off-state Voltages up to 800V may be applied without damage,but the thyristor may switch to the on-stage.The rate of rise of current should not exceed15A/µs. Thermal Characteristics Symbol Parameter Value Min Typ Max Units RθJc Thermal Resistance Junction to Case - - 20 ℃/W RθJA Thermal Resistance Junction to Ambient - - 70 ℃/W Rev.A Oct.2010 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WCD8C60 Electrical Characteristics (TJ=25℃ ,R GK=1KΩ unless otherwise specified) Symbol IDRM/IRRM VTM IGT VGT VGD dv/dt Off-state leakage current TC=25℃ (VAK=VDRM/VRRM) TC=125℃ Forward "On"voltage (ITM=16A tp=380µs) (Note2.1) Gate Trigger Current(continuous dc) (VAK=12Vdc,RL=140Ω) (Note2.2) Gate Trigger Voltage (continuous dc) (VAK=12Vdc,RL=140Ω) (Note2.2) Gate threshold Voltage (VD=12VDRM RL=3.3KΩ RGK=220Ω) Critical Rate of Rise Off-State Voltage (VD=0.67VDRM; RGK=220Ω) (Note2.1) TJ=125℃ Min Value Typ Max - - 5 μA 2 mA Units - 1.4 1.6 V - - 15 mA - - 1.5 V 0.1 - - V 200 - - V/㎲ IH Holding Current(VD=12V;IGT=0.5mA) - - 20 mA IL Latching Current(VD=12V;IGT=0.5mA) - 2 6 mA Rd Dynamic resistance - - 46 mΩ TJ=125℃ *Notes: 2.1 Pulse Width ≤1.0ms,Duty cycle≤1% 2.2 RGK Current is not Included in measurement. 2/5 Steady, keep you advance WCD8C60 0 Fig.1 Fig.1Maximum average power dissipation versus average on-state current Fig. 3Surge peak on-state current versus Number of cycles. Fig.5 Fig.5Non-repetitive surge peak on-state current for a sinusoidal pulse with width Tp<10ms and corresponding value of l2t Fig .2 Average and D.C.on-state current versus ambient temperature (device mounted on FR4 with recommended pad layont Fig. 4On-state Characteristics (maximum values) Fig.6 Fig.6Relative variation of gate trigger current and holding versus junction temperature 3/5 Steady, keep you advance WCD8C60 7Relative variation of dv/dt immunity Fig. Fig.7 versus gate-cathode resistance (typical values) Fig.8 Fig.8Relative variation of dv/dt immunity versus gate-cathode capacitance (typical values) Fig.8 Fig.8Thermal Resistance junction to ambient Versus copper surface under tab (Epoxy printedCircuit board FR4,copper thickness:35µm) 4/5 Steady, keep you advance WCD8C60 TO -252 Package Dimension TO-252 Unit: mm 5/5 Steady, keep you advance