New Product V15P45S Vishay General Semiconductor SMD Photovoltaic Solar Cell Protection Schottky Rectifiers Ultra Low VF = 0.31 V at IF= 5 A FEATURES TMBS® eSMP® Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology K • Low forward voltage drop, low power losses • High efficiency operation 1 • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C 2 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TO-277A (SMPC) K Anode 1 Cathode Anode 2 • Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS IF(AV) 15 A VRRM 45 V IFSM 210 A VF at IF = 15 A 0.42 V TOP max. 150 °C MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code V15P45S UNIT 1545S VRRM 45 IF (1) 15 IF (2) 4.8 Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 210 A Junction temperature in DC forward current without reverse bias, t 1 h TJ (3) 200 °C Operating junction temperature range TOP - 40 to + 150 °C Storage temperature range TSTG - 40 to + 175 °C Maximum repetitive peak reverse voltage Maximum DC forward current V A Notes (1) Mounted on 30 mm x 30 mm aluminum PCB (2) Free air, mounted on recommended copper pad area (3) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test Document Number: 89343 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product V15P45S Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5.0 A IF = 7.5 A TA = 25 °C IF = 15 A Instantaneous forward voltage VF (1) IF = 5.0 A IF = 15 A TA = 25 °C VR = 45 V Reverse current TA = 125 °C MAX. 0.40 - 0.45 - 0.49 0.58 0.31 - 0.34 - UNIT V TA = 125 °C IF = 7.5 A TYP. IR (2) 0.42 0.51 - 1500 μA 15 50 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL V15P45S RJA (1) 75 RJM (2) 4 UNIT °C/W Notes (1) Free air, mounted on recommended copper pad area; thermal resistance R JA - junction to ambient (2) Mounted on 30 mm x 30 mm aluminum PCB; thermal resistance R JM - junction to mount ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V15P45S-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel V15P45S-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 18 TM = 116 °C (1) DC Forward Current (A) 16 Notes Mounted on 30 mm x 30 mm aluminum PCB; TM measured at the terminal of cathode band (RJM = 4 °C/W) (2) Free air, mounted on recommended copper pad area (RJA = 75 °C/W) (1) 14 12 10 8 TA = 25 °C (2) 6 4 TL Measured at the Cathode Band Terminal 2 0 25 0 50 75 100 125 150 TM - Mount Temperature (°C) Fig. 1 - Forward Current Derating Curve www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 89343 [email protected], [email protected], [email protected] Revision: 19-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product V15P45S Vishay General Semiconductor 10 000 11 Average Power Loss (W) 9 Junction Capacitance (pF) D = 0.5 D = 0.8 D = 0.3 10 D = 0.2 8 7 D = 1.0 D = 0.1 6 5 T 4 3 2 D = tp/T 1 2 6 4 10 8 12 14 16 100 0.1 18 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Transient Thermal Impedance (°C/W) 100 Instantaneous Forward Current (A) 1000 tp 0 0 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 0.1 0 0.2 0.3 0.4 0.5 0.6 100 Junction to Ambient 10 1 0.1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode Instantaneous Reverse Current (A) 100 TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 0.1 TA = 25 °C 0.01 0.001 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics Per Diode Document Number: 89343 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product V15P45S Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-277A (SMPC) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC TO-277A www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 89343 [email protected], [email protected], [email protected] Revision: 19-Apr-11 This document is subject to change without notice. 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