WFF4N60
Silicon N-Channel MOSFET
Features
D
�
4A ,600V,R DS(on)(Max 2.3Ω)@VGS=10V
�
Ultra-low Gate Charge(Typical 15nC)
�
High speed swith
�
Maximum Junction Temperature Range(150℃)
G
S
General Description
This Power MOSFET is
produced using Winsemi's
advanced
planar stripe,VDMOS technology. This latest technology has been
especially designed to minimize on -state resistance,have a high
rugged avalanche characteristics. This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic lamp ballast.
Absolute Maximum Ratings
Symbol
VDSS
ID
Parameter
Value
Units
Drain Source Voltage
600
V
Continuous Drain Current(@Tc=25℃)
4*
A
Continuous Drain Current(@Tc=100℃)
2.5*
A
16*
A
±30
V
I DM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
240
mJ
EAR
Repetitive Avalanche Energy
(Note1)
10
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
4.5
V/ ns
33
W
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
T J,T stg
TL
Junction and Storage Temperature
Channel Temperature
0.26
W/℃
-55~150
℃
300
℃
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
3.79
℃/W
R QJA
Thermal Resistance , Junction-to -Ambient
-
-
62.5
℃/W
Rev.A Sep.2010
Copyr ight@Winsemi Microelectronics Co., Ltd., All right reserved.
WFF4N60
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Min
Type
Max
Unit
I GSS
VGS =±30V,VDS =0V
-
-
±100
nA
V(BR)GSS
I G=±10 µA,VDS=0V
±30
-
-
V
VDS =600V,V GS =0V
-
-
10
µA
VDS =480V,Tc=125 ℃
-
100
µA
Drain cut -off current
Drain -source breakdownvoltage
Test Condition
I DSS
V(BR)DSS
I D=250 µA,VGS =0V
600
-
-
V
Gate threshold voltage
VGS(th)
VDS = VGS , I D = 250 µA
2
-
4
V
Drain -source ON resistance
R DS(ON)
VGS =10V,ID=2.0A
-
-
2.3
Ω
Input capacitance
C iss
VDS =25V,
-
550
720
Reverse transfer capacitance
C rss
VGS =0V,
-
8
11
Output capacitance
C oss
f=1MHz
-
60
80
VDD=325V,
-
35
80
I D=4A，
-
10
30
R G=25Ω，
-
40
90
-
60
100
-
15
20
-
2.8
-
-
6
-
Min
Type
Max
Unit
Turn-On Rise Time
tr
Switching
Turn-On Delay Time
td(on)
time
Turn-Off Fall Time
Turn-Off Delay Time
tf
td(off)
Total gate charge(gate-source
(Note4,5)
VDS =520V,
Qg
plus gate-drain)
pF
ns
VGS =10V,
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
I D=4A
(Note4,5)
nC
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Continuous drain reverse current
I DR
-
-
-
4
A
Pulse drain reverse current
I DRP
-
-
-
16
A
Forward voltage(diode)
VDSF
I DR=4A,VGS =0V
-
-
1.4
V
Reverse recovery time
trr
I DR=4A,VGS =0V,
-
300
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
2.2
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=18.5m H I AS=4A,VDD=50V,R G=0Ω ,Starting T J=25℃
3.I SD≤4A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ =25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
WFF4N60
Fig.1 On-State Characteristics
Fig.3 On Resistance variation vs
Fig.2 Transfer Current characteristics
Fig.4 Body Diode Forward Voltage
Variation vs Source Current
Drain Current
and temperature
Fig.5 On-Resistance Variation vs
Fig.6 Gate Charge Characteristics
Junction Temperature
3/7
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WFF4N60
Fig.7 Maximum Safe Operation Area
Fig.8 Maximum Drain Current vs
Case Temperature
Fig.9 Transient Thermal Response curve
4/7
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WFF4N60
Fig.10 Gate Test circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Uncamped Inductive Switching Test Circuit & Waveform
5/7
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WFF4N60
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
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WFF4N60
TO-220F Package Dimension
Unit:mm
7/7
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