WFF2N65 B WFF2N65B Silicon N-Channel MOSFET Features � 2A,650V(Type),RDS(on)(Max 5Ω)@VGS=10V � Ultra-low Gate Charge(Typical 9.0nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage(VISO=4000V AC) � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have rugged a high avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply . Absolute Maximum Ratings Symbol VDSS Parameter Value Units 650 V Continuous Drain Current(@Tc=25℃) 2* A Continuous Drain Current(@Tc=100℃) 1.3* A 16* A ±30 V Drain Source Voltage ID IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note2) 240 mJ EAR Repetitive Avalanche Energy (Note1) 10 mJ dv/dt Peak Diode Recovery dv /dt (Note3) 4.5 V/ ns 20 W 0.26 W/℃ -55~150 ℃ 300 ℃ Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ,Tstg TL Junction and Storage Temperature Maximum lead Temperature for soldering purposes *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter RQJC Thermal Resistance , Junction -to -Case RQCS Thermal Resistance , Case-to-Sink RQJA Thermal Resistance , Junction-to -Ambient Value Units Min Typ Max - - 6.25 ℃/W 0.5 - - ℃/W - - 62.5 ℃/W Rev.A Apr.2011 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. B WFF2N65 WFF2N65B Electrical Characteristics(Tc=25℃) Characteristics Symbol Gate leakage current Gate-source breakdown voltage Break Voltage Temperature Min Type Max Unit IGSS VGS=±30V,V DS=0V - - ±100 nA V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V VDS=600V,V GS=0V - - 10 µA VDS=480V,Tc=125℃ - 100 µA - - V 0.65 - Drain cut -off current Drain -source breakdown voltage Test Condition IDSS V(BR)DSS △BVDSS/ Coefficient TJ ID=250 µA,VGS=0V 650 ID=250µA,Referenced to 25℃ Gate threshold voltage VGS(th) VDS=10V,ID=250 µA 2 - 4 V Drain -source ON resistance RDS(ON) VGS=10V,ID=1A - 4.2 5 Ω Forward Transconductance gfs VDS=50V,ID=1A - 2.05 - S Input capacitance Ciss VDS=25V, - 190 230 Reverse transfer capacitance Crss VGS=0V, - 1.8 2.1 Output capacitance Coss f=1MHz - 15 20 VDD=300V, - 23 45 ID=2A, - 7 23 RG=25Ω, - 24 46 - 22 43 - 9.0 19 - 1.7 - - 7.2 - Min Type Max Unit Turn-on Rise time tr Turn-on delay time ton Switching time pF ns Turn-off Fall time tf Turn-off delay time (Note4,5) toff Total gate charge(gate-source VDD=320V, Qg plus gate-drain) VGS=10V, nC Gate-source charge Qgs Gate-drain("miller") Charge Qgd ID=2A (Note4,5) Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Continuous drain reverse current IDR - - - 2 A Pulse drain reverse current IDRP - - - 6 A Forward voltage(diode) VDSF IDR=2A,VGS=0V - - 1.4 V Reverse recovery time trr IDR=2A,VGS=0V, - 200 - ns Reverse recovery charge Qrr dIDR / dt =100 A / µs - 1.3 - µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=0.5mH IAS=2.0A,VDD=50V,RG=0Ω ,Starting TJ=25℃ 3.ISD≤2.0A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 Steady, keep you advance B WFF2N65 WFF2N65B Fig.1 On-State Characteristics Fig.2 Transfer Current characteristics Fig.3 On Resistance variation vs Fig.4 Body Diode Forward Voltage Drain Current Variation vs Source Current And temperature Fig.5 On-Resistance Variation vs Fig.6 Gate Charge Characteristics Junction Temperature 3/7 Steady, keep you advance B WFF2N65 WFF2N65B Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Transient Thermal Response curve 4/7 Steady, keep you advance B WFF2N65 WFF2N65B Fig.10 Gate Test circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Uncamped Inductive Switching Test Circuit & Waveform 5/7 Steady, keep you advance B WFF2N65 WFF2N65B Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, keep you advance B WFF2N65 WFF2N65B TO-220F Package Dimension Unit:mm 7/7 Steady, keep you advance