Down

80
WFF5N
5N8
Silicon N-Channel MOSFET
Features
�
4.5A,800V,RDS(on)(Max2.5Ω)@VGS=10V
�
Ultra-low Gate charge(Typical 14nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(150℃)
General Description
This Power
MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology.this latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche
characteristics .This devices is specially well
suited for half bridge and
full bridge resonant
topology line a
electronic lamp ballast, high efficiency switched
mode power
supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
800
V
Continuous Drain Current(@Tc=25℃)
4.5*
A
Continuous Drain Current(@Tc=100℃)
2.5*
A
16*
A
±30
V
mJ
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
230
IAR
Avalanche Current
(Note1)
4
EAR
Repetitive Avalanche Energy
(Note1)
11
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
4.5
V/ns
33
W
Derating Factor above 25℃
0.43
W/℃
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
TL
Channel Temperature
300
Total Power Dissipation(@Tc=25℃)
PD
℃
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
3.79
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
62.5
℃/W
Rev.A May.2012
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
80
WFF5N
5N8
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=800V,VGS=0V,Tc=25℃
-
-
10
µA
VDS=640V,Tc=125℃
-
-
100
µA
800
-
-
V
ID=250µA,referenced to25℃
-
0.65
-
V/℃
Drain Cut -off current
IDSS
Drain -source breakdown voltage
V(BR)DSS
Breakdown Voltage Temperature
∆BVDSS/∆TJ
ID=250 µA,VGS=0V
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=2.25A
-
2.0
2.5
Ω
Forward Transconductance
gfs
VDS=40V,ID=2.25A
-
4.6
-
S
Input capacitance
Ciss
VDS=25V,
-
1320
1716
Reverse transfer capacitance
Crss
VGS=0V,
-
9
12
Output capacitance
Coss
f=1MHz
-
105
136
VDD=400V,
-
85
155
Turn-on Rise time
tr
Turn-on delay time
Td(on)
ID=4.5A
-
34
75
tf
RG=25Ω
-
59
118
-
56
113
-
14
19
-
5
-
-
6
-
pF
Switching time
ns
Turn-off Fall time
Turn-off delay time
(Note4,5)
Td(off)
Total gate charge(gate-source
VDD=640V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=4.5A
(Note,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Continuous drain reverse current
IDR
Pulse drain reverse current
IDRP
Forward voltage(diode)
VDSF
Reverse recovery time
Reverse recovery charge
Test Condition
Min
Type
Max
Unit
-
-
-
4.5
A
-
-
-
16
A
IDR=4.5A,VGS=0V
-
-
1.4
V
trr
IDR=4.5A,VGS=0V,
-
625
-
ns
Qrr
dIDR /dt =100 A /µs
-
6.71
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=40mH IAS=4.5A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤4.5A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
80
WFF5N
5N8
Fig.1 On-State characteristics
Fig.2 Transfer characteristics
Fig.3 On-Resistance Variation vsDrain
Fig.4 Body Diode Forward Voltage
Current and Gate Voltage
Variation with Source Current and
Temperature
Fig.5 Capacitance Characteristics
Fig.6 Gate Charge Characteristics
3/7
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80
WFF5N
5N8
Fig.7 Breakdown Voltage Variation
Fig.8 On-Resistance Variation vs.
vs.Temperature
Temperature
Fig.9 Maximum Safe Operation Area
Fig.10 Maximum Drain Current vs
Case Temperature
Fig.11 Transient Thermal Response Curve
Steady, keep you advance
4/7
80
WFF5N
5N8
Fig.12 Gate Test Circuit & Waveform
Fig.13 Resistive Switching Test Circuit & Waveform
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
5/7
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80
WFF5N
5N8
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
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80
WFF5N
5N8
F Package Dimension
TO-220
TO-220F
Unit:mm
7/7
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