F5N6 0 WF WFF 5N60 ann el MO SFET Sili ilicc on N-Ch Cha nne F eatu res ■ 4.5A,600V,RDS(on)(Max 2 .5Ω)@ V G S=1 0 V ■ Ultr a-low Gate Charge( Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) rip Gen er al Desc scrip ripttion This Power MOSFET is produced using Winsemi’s advanced Planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state r esistance, have a high r ugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast. ngs A bsolute Max axiim um Rati tin ol S ymb mbol V DSS P a ra me mett er Value Uni Unitts Drain Source Voltage 60 0 V Continuous Drain Current(@Tc=25℃) 4 .5 * A Continuous Drain Current(@Tc=100℃) 3 .1 * A 16 * A ±3 0 V ID IDM Drain Curr ent Pulsed (Note1) V GS Gate to Source Voltage E AS Single Pulsed Avalanche Energy (N ote 2) 24 0 mJ E AR Repetitive Avalanche Energy (Note 1) 10 mJ d v /d t Peak Diode Recovery dv/dt 4.5 V/n s 33 W 0 .26 W /℃ -55~150 ℃ 30 0 ℃ (Note 3) Total Power Diss ipation(@Tc=25℃) PD Derating Factor above 25℃ TJ, Tstg TL Junction and Storage Temperature Channel Temperatur e mite d by jun ct ure *Dra in c urre nt li lim unct ctiion t empe rat ature al Ch arac stics Therm rmal Cha actteri ris Min V a lue Typ M ax Thermal Resistance, Junc tion-to-Case - - 3.79 ℃/W Thermal Resistance, Junction-to-Ambient - - 62.5 ℃/W ol S ymb mbol Par ame metter R QJC R QJA Uni Unitts 1/7 Copyr ight@Winsemi Microelectronics Co., Ltd., All right reserved. F5N6 0 WF WFF 5N60 arac C) Elec ecttrical Ch Cha actteristics (Tc = 25°C Characteristics Symbol Type Max Unit VG S = ± 30 V, VDS = 0 V - - ± 100 nA V (BR) GSS IG = ± 10 μA, V DS = 0 V ± 30 - - V VDS = 600 V, V DS = 0 V - - 10 μA VDS = 480 V, Tc = 12 5 ℃ - - 100 μA Drain cut−off current Drain−source breakdown voltage Min IG SS Gate leakage curre nt Gate−source br eakdown voltage Test Condition I DSS V (BR)DSS ID = 250 μA, VG S = 0 V 600 - - V Gate threshold voltage V GS(th) VDS = 10 V, ID =250 μA 2 - 4 V Drain−source ON resistance RDS(ON) VG S = 10 V, ID = 2.2A - 1 .8 2 .5 Ω Input capacitance C iss VDS = 25 V, - 545 670 Reverse tr ansfer capacitance C rss VG S = 0 V, - 9 10 .5 Output capacitance C oss f = 1 MHz - 70 90 VDD =300 V, - 10 30 to n ID =4.4 A - 35 80 tf RG=25 Ω - 45 100 - 20 50 - 16 20 - 3 .4 - - 7 - Rise time tr Turn−on time Switching time pF ns Fall time Turn−off time (N ote4,5) toff Total gate charge (gate−source VDD = 480 V, Qg plus gate−drain) VG S = 10 V, Gate−source charge Q gs Gate−drain (“ miller ”) Charge Q gd nC ID = 4.4 A (N ote4,5) s and Ch arac Sou Sourrce−Drain Rating ings Cha actte ristics (Ta = 25°C) Symbol Test Condition Min Type Max Unit Continuous drain reverse current Characteristics I DR - - - 4 .5 A Pulse drain r everse current I DRP - - - 17.6 A For war d voltage (diode) V DSF IDR = 4.4 A, V GS = 0 V - - 1 .4 V Reverse r ecovery time T rr IDR = 4.4 A, V GS = 0 V , - 390 - ns Reverse r ecovery charge Q rr dIDR / dt = 100 A / μ s - 2 .2 - μC Note 1.Repeativity rating :pulse width limited by junction te m pe ra tu r e 2.L=18.5mH,IAS=4.4A,VDD=50V,R G=0Ω ,StartingT J=25℃ 3.ISD≤ 4.5A,di/dt≤ 200A/us, V DD<BV DSS,STARTING TJ=25℃ 4.Pulse Test: Pulse Width≤ 300us,Duty Cycle≤ 2% 5.Essentially independent of operating temperature. This tra nsistor is an elec trostatic se nsitive devic e Please handle with ca ution 2/7 Steady, keep you advance F5N6 0 WF WFF 5N60 3/7 Steady, keep you advance F5N6 0 WF WFF 5N60 4/7 Steady, keep you advance F5N6 0 WF WFF 5N60 cuit & W aveform Fig. 10 Gate T es estt Cir Circ e Sw it ching T es cuit & W aveform Fig. 11 R es esii stiv ive itc estt Cir Circ clamp ed In ducti ng Test Cir cuit & W av eform Fig. 12 Un Unc Ind tivve Sw itchi hin Circ 5/7 Steady, keep you advance F5N6 0 WF WFF 5N60 k Diode R ec o very dv /dt Test Cir cuit & Wav eform Fig. 13 Pea eak eco Circ 6/7 Steady, keep you advance F5N6 0 WF WFF 5N60 F Pack age Dim ension TO TO--220 220F cka Dime t: mm Uni Unit: t:m 7/7 Steady, keep you advance