B
K2837
2837B
Silicon N-Ch
annel MOS
FET
Cha
OSF
Features
■ 24A,500V,RDS(on)(Max0.19Ω)@VGS=10V
■ Ultra-low Gate charge(Typical 90nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This N-Channel enhancement mode power field effect transistors
are produced using Winsemi's proprietary, planar stripe ,DMOS
technology. This advanced technology has been especially tailored
to minimize on-state resistance , provide superior switching
performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficiency
switch mode power supplies.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
500
V
Continuous Drain Current(@Tc=25℃)
24
A
Continuous Drain Current(@Tc=100℃)
15.2
A
96
A
±30
V
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
1100
mJ
EAR
Repetitive Avalanche Energy
(Note1)
29
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
4.5
V/ ns
Total Power Dissipation(@Tc=25℃)
271
W
Derating Factor above 25℃
2.22
W/℃
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
TL
Channel Temperature
300
℃
PD
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
0.46
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
40
℃/W
Rev.A Nov.2011
Copyright@WinSemi Microelectronics Co., Ltd., All right reserved.
B
K2837
2837B
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±25V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=500V,VGS=0V
-
-
1
µA
Drain cut -off current
IDSS
VDS=400V,Tc=125℃
Drain -source breakdown voltage
V(BR)DSS
ID=10 mA,VGS=0V
Breakdown voltage Temperature
△BVDSS/
ID=250µA,Referenced
△TJ
coefficient
10
500
-
-
V
-
0.53
-
V/℃
3.0
-
5.0
V
to 25℃
Gate threshold voltage
VGS(th)
VDS=10V,ID=1mA
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=9A
-
0.16
0.19
Ω
Forward Transconductance
gfs
VDS=40V,ID=9A
-
22
-
S
Input capacitance
Ciss
VDS=25V,
-
3500
4500
Reverse transfer capacitance
Crss
VGS=0V,
-
55
70
Output capacitance
Coss
f=1MHz
-
520
670
VDD=250V,
-
250
500
ton
ID=18A
-
80
170
tf
RG=25Ω
-
155
320
-
200
400
-
90
120
-
23
-
-
44
-
Rise time
tr
Turn-on time
Switching time
Fall time
Turn-off time
ns
(Note4,5)
toff
Total gate charge(gate-source
pF
VDD=400V,
Qg
VGS=10V,
plus gate-drain)
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
nC
ID=18A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
24
A
Pulse drain reverse current
IDRP
-
-
-
96
A
Forward voltage(diode)
VDSF
IDR=24A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=24A,VGS=0V,
-
400
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
4.3
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=3.4mH IAS=24A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤24A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
ea
dy, keep you advance
St
Stea
ead
B
K2837
2837B
ate Ch
arac
sti
cs
Fig.1 On St
Sta
Cha
actteri
ris
tic
ent Ch
arac
sti
cs
Fig.2 Transfer Curr
Curre
Cha
actteri
ris
tic
es
ati
on vs
Fig.3 On-R
n-Res
esiistance Vari
ria
tio
ain Curr
ent and gate volt
age
Dr
Dra
Curre
olta
ance Ch
arac
sti
cs
Fig.5 Capacit
ita
Cha
actteri
ris
tic
g.4 Body Diode For
ward Volt
age
Fi
Fig
Forw
lta
ati
on with Sour
ce Curr
ent and
Vari
ria
tio
Sourc
Curre
perature
Tem
emp
arge Ch
aracteri
sti
cs
Fig.6 Gate Ch
Cha
Cha
ris
tic
3/7
ea
dy, keep you advance
St
Stea
ead
B
K2837
2837B
eak
down Vol
ati
on
Fig.7 Br
Break
eakd
olttage Vari
ria
tio
ximum Safe Operation Area
Fig.9 Ma
Max
Fig.8 On-R
es
ation
n-Res
esiistance Vari
ria
perature
vs.Tem
emp
Fig.
10 Ma
ximum Dr
ain Curr
ent vs
Fig.1
Max
Dra
Curre
e Temperature
Cas
ase
erma
pon
se Cur
ve
Fig
Fig..11 Transient Th
The
mall Res
espon
pons
Curv
4/7
ea
dy, keep you advance
St
Stea
ead
B
K2837
2837B
g.12 Gate Tes
cuit & Wav
eform
Fi
Fig
estt Cir
Circ
Wave
13 Res
ve Switching Test Cir
cuit & Wav
eform
Fig.
Fig.1
esiisti
tiv
Circ
ave
Fig.
14 Un
clamped Indu
cti
ve Switching Test Cir
cuit & Wav
eform
Fig.1
Unc
Induc
tiv
Circ
Wave
5/7
ea
dy, keep you advance
St
Stea
ead
B
K2837
2837B
15 Pea
k Diode Rec
ov
ery dv/dt Tes
cuit & Wav
eform
Fig.
Fig.1
eak
ecov
ove
estt Cir
Circ
ave
6/7
ea
dy, keep you advance
St
Stea
ead
B
K2837
2837B
B Pack
age Dim
ension
TO-3P
3PB
cka
Dime
Unit:mm
7/7
ea
dy, keep you advance
St
Stea
ead