High-reliability discrete products and engineering services since 1977 BR103 SILICON PLANAR THYRISTOR FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Negative and positive repetitive peak off state voltage Maximum RMS on-state current Surge on state current, sinusoidal pulse (tp< 10ms) Repetitive surge on-state current at tp = 6µs and f = 40kHz sine Peak gate forward current Symbol Value Unit VRR/VDR 30 V IT(RMS) 0.8 A ITSM 6 A IT 2 A IGFP 0.5 A Repetitive reverse gate voltage V(KG)R 6 V Storage and junction temperature range Tstg, TJ -40 to +125 °C Average gate power dissipation PG(AV) 0.01 W PGP 0.1 W Peak gate power dissipation ELECTRICAL CHARACTERISTICS (TC = 25°C) Characteristic Symbol Value Unit IR/ID <2 <50 µA IH <3 <4 mA On-state voltage (ITS = 1A, tp = 1ms) VT <1.5 V Gate trigger current (VAK = 6V, RL = 100Ω) (TJ = 0°C) IGT <200 <250 µA Gate trigger voltage (VAK = 6V, RL = 100Ω, R GT = 1kΩ, TJ = 0°C) VGT Gate non-trigger forward voltage (VD = VDR, RGK = 1kΩ, T J = 125°C) VGF Critical rate of voltage rise (RGK = 1kΩ, T J = 125°C, VAK = 10V) dv/dt STATIC CHARACTERISTICS Continuous reverse blocking and off state current (RGK = 1kΩ) (TJ = 125°C) Holding current (RGK = 1kΩ) (TJ = -40°C) Turn-off time (ITS(rectangular) = 1A, tp = 50µs) tq Turn-on time (VD = VDR, RL = 100Ω, RGK = 1kΩ, I GTS = 1.4mA, tp = 5µs, tr = 40ns) ton <0.9 >0.1 10 <6 1.2 V V V/µs µs µs Rev. 20130118 High-reliability discrete products and engineering services since 1977 BR103 SILICON PLANAR THYRISTOR MECHANICAL CHARACTERISTICS Case TO-92 Marking Body painted, alpha-numeric Pin out See below Rev. 20130118 High-reliability discrete products and engineering services since 1977 BR103 SILICON PLANAR THYRISTOR Rev. 20130118 High-reliability discrete products and engineering services since 1977 BR103 SILICON PLANAR THYRISTOR Rev. 20130118