SST4403 / MMST4403 / 2N4403 Transistors PNP Medium Power Transistor (Switching) SST4403 / MMST4403 / 2N4403 zExternal dimensions (Unit : mm) 2.9±0.2 SST4403 0.95 +0.2 −0.1 1.9±0.2 0.45±0.1 0.95 0.95 +0.2 1.3 − 0.1 MMST4403 2N4403 SST3 SMT3 TO-92 Marking Code Basic ordering unit (pieces) R2X R2X T116 T146 − T93 3000 3000 3000 ROHM : SST3 MMST4403 2.9± 0.2 0.8± 0.1 (2) + 0.2 1.6− 0.1 V V Emitter-base voltage Collector current VEBO IC −6 −0.6 V A 0.2 W 0.35 W Collector power dissipation SST4403 MMST4403 SST4403 MMST4403 PC 2N4403 Tj Junction temperature Tstg Storage temperature + + ∗ Mounted on a 7 5 0.6mm CERAMIC SUBSTRATE 2N4403 4.8 ± 0.2 ROHM : TO-92 EIAJ : SC-43 (1) Emitter (2) Base (3) Collector 0.5 ± 0.1 (1) (2) (3) 2.5 + 0.3 − 0.1 W 0.625 150 −55 to +150 3.7 ± 0.2 3Min. Unit −40 −40 (1) Emitter (2) Base (3) Collector 4.8 ± 0.2 Limits VCBO VCEO (12.7Min.) Symbol Collector-base voltage Collector-emitter voltage 0 to 0.1 (3) All terminals have the same dimensions 0.1 0.15 + + 0.1 − 0.06 0.4 − 0.05 ROHM : SMT3 EIAJ : SC-59 zAbsolute maximum ratings (Ta=25°C) (1) Emitter (2) Base (3) Collector 1.1+ 0.2 − 0.1 1.9± 0.2 0.95 0.95 (1) Parameter 0.2Min. 2.8± 0.2 SST4403 0 to 0.1 (3) All terminals have the same dimensions 0.1 0.15 + −0.06 0.4 +0.1 −0.05 zPackage, marking, and packaging specifications Part No. Packaging type 2.4±0.2 (2) (1) 0.3 to 0.6 zFeatures 1) BVCEO = −40V (Min.) ; at IC= −1mA 2) Complements the SST4401 / MMST4401 / PN4401 0.45 ± 0.1 5 ˚C 2.3 ˚C zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit BVCBO −40 − − V IC= −100µA BVCEO −40 − − V IC= −1mA BVEBO −5 − − V IE= −100µA Collector cutoff current ICBO − − −0.1 µA VCB= −35V Emitter cutoff current IEBO − − −0.1 µA VEB= −5V − − −0.4 − − −0.75 −0.75 − −0.95 − 30 − −1.3 − − VCE= −1V, IC= −0.1mA 60 − − VCE= −1V, IC= −1mA 100 − 100 − − 300 20 − fT 200 − − − Cob − − 8.5 pF VCB= −10V, f=100kHz Cib − − 30 pF VEB= −0.5V, f=100kHz Delay time td − − 15 ns VCC= −30V, VEB(OFF)= −2V, IC= −150mA, IB1= −15mA Rise time tr − − 20 ns VCC= −30V, VEB(OFF)= −2V, IC= −150mA, IB1= −15mA tstg − − 225 ns VCC= −30V, IC= −150mA, IB1= −IB2= −15mA tf − − 30 ns VCC= −30V, IC= −150mA, IB1= −IB2= −15mA Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) DC current transfer ratio Transition frequency Collector output capacitance Emitter input capacitance Storage time Fall time hFE V V − Conditions IC/IB= −150mA/ −15mA IC/IB= −500mA/ −50mA IC/IB= −150mA/ −15mA IC/IB= −500mA/ −50mA VCE= −1V, IC= −10mA VCE= −1V, IC= −150mA VCE= −2V, IC= −500mA MHz VCE= −10V, IE=20mA, f=100MHz Rev.B 1/3 SST4403 / MMST4403 / 2N4403 Transistors zElectrical characteristic curves 100 1000 500 400 50 VCE=10V 100 300 200 1V 100 1B=0µA 10 0.1 0 0 10 5 COLLECTOR-EMITTER VOLTAGE : VCE (V) 1.0 10 COLLECTOR CURRENT : IC (mA) 100 1000 Fig.3 DC current gain vs. collector current ( I ) Fig.1 Grounded emitter output characteristics 1000 1.8 VCE=10V Ta=25˚C IC / IB=10 1.6 DC CURRENT GAIN : hFE 1.4 1.2 1.0 Ta=125˚C Ta=25˚C 100 0.8 0.6 0.4 Ta= −55˚C 0.2 0 1.0 10 100 1000 COLLECTOR CURRENT : IC (mA) 10 0.1 1.0 1000 AC CURRENT GAIN : hFE Ta=25˚C VCE=10V f=1kHz 100 1.0 10 COLLECTOR CURRENT : IC (mA) 100 1000 Fig.4 DC current gain vs. collector current ( II ) Fig.2 Base-emitter saturation voltage vs. collector current 10 0.1 10 COLLECTOR CURRENT : IC (mA) 100 Fig.5 AC current gain vs. collector current 1000 COLLECTOR-EMITTER SATURATION VOLTAGE : VCE (sat) (V) BASE-EMITTER SATURATION VOLTAGE : VBE (sat) (V) Ta=25˚C 600 DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) Ta=25˚C Ta=25˚C IC / IB=10 0.3 0.2 0.1 0 1.0 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current Rev.B 2/3 SST4403 / MMST4403 / 2N4403 1.2 1.0 0.8 0.6 0.4 0.2 100 10 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Cib 10 Cob 1000 300MHz 200MHz 10 250MHz 1 200MHz 0.1 1 Fig.8 Gain bandwidth product vs. collector current 1000 VCC=30V 100 10V 10 100 COLLECTOR CURRENT : IC (mA) 1000 Fig.9 Gain bandwidth product 500 Ta=25˚C IC / IB=10 TURN ON TIME : ton (ns) CAPACITANCE (pF) Ta=25˚C f=1MHz 100 Ta=25˚C 100MHz COLLECTOR CURRENT : IC (mA) Fig.7 Grounded emitter propagation characteristics 100 10 COLLECTOR-EMITTER VOLTAGE : VCE(V) 1.4 Ta=25˚C VCE=10V Ta=25˚C VCC=30V IC / IB=10 RISE TIME : tr (ns) Ta=25˚C VCE=10V 1.6 0 1.0 100 1000 1.8 CURRENT GAIN-BANDWIDTH PRODUCT : fT (MHz) BASE-EMITTER ON VOLTAGE : VBE(on) (V) Transistors 100 10 1 0.1 10 1 10 REVERSE BIAS VOLTAGE (V) 100 1 100 10 1000 5 1 10 100 COLLECTOR CURRENT : IC (mA) 1000 Fig.12 Rise time vs. collector current Ta=25˚C VCC=30V IC=10IB1=10IB2 FALL TIME : tf (ns) STORAGE TIME : ts (ns) Ta=25˚C VCC=30V IC=10IB1=10IB2 1000 Fig.11 Turn-on time vs.collector current Fig.10 Input /output capacitance vs. voltage 1000 10 100 COLLECTOR CURRENT : IC (mA) 100 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.13 Storage time vs. collector current 10 1 10 100 COLLECTOR CURRENT : IC (mA) 1000 Fig.14 Fall time vs. collector current Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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