ROHM 2N4403

SST4403 / MMST4403 / 2N4403
Transistors
PNP Medium Power Transistor
(Switching)
SST4403 / MMST4403 / 2N4403
zExternal dimensions (Unit : mm)
2.9±0.2
SST4403
0.95 +0.2
−0.1
1.9±0.2
0.45±0.1
0.95 0.95
+0.2
1.3 −
0.1
MMST4403
2N4403
SST3
SMT3
TO-92
Marking
Code
Basic ordering unit (pieces)
R2X
R2X
T116
T146
−
T93
3000
3000
3000
ROHM : SST3
MMST4403
2.9± 0.2
0.8± 0.1
(2)
+ 0.2
1.6−
0.1
V
V
Emitter-base voltage
Collector current
VEBO
IC
−6
−0.6
V
A
0.2
W
0.35
W
Collector power
dissipation
SST4403
MMST4403
SST4403
MMST4403
PC
2N4403
Tj
Junction temperature
Tstg
Storage temperature
+
+
∗ Mounted on a 7 5 0.6mm CERAMIC SUBSTRATE
2N4403
4.8 ± 0.2
ROHM : TO-92
EIAJ : SC-43
(1) Emitter
(2) Base
(3) Collector
0.5 ± 0.1
(1) (2) (3) 2.5 + 0.3
− 0.1
W
0.625
150
−55 to +150
3.7 ± 0.2
3Min.
Unit
−40
−40
(1) Emitter
(2) Base
(3) Collector
4.8 ± 0.2
Limits
VCBO
VCEO
(12.7Min.)
Symbol
Collector-base voltage
Collector-emitter voltage
0 to 0.1
(3)
All terminals have the same
dimensions
0.1
0.15 +
+ 0.1
− 0.06
0.4 − 0.05
ROHM : SMT3
EIAJ : SC-59
zAbsolute maximum ratings (Ta=25°C)
(1) Emitter
(2) Base
(3) Collector
1.1+ 0.2
− 0.1
1.9± 0.2
0.95 0.95
(1)
Parameter
0.2Min.
2.8± 0.2
SST4403
0 to 0.1
(3)
All terminals have the same
dimensions
0.1
0.15 +
−0.06
0.4 +0.1
−0.05
zPackage, marking, and packaging specifications
Part No.
Packaging type
2.4±0.2
(2)
(1)
0.3 to 0.6
zFeatures
1) BVCEO = −40V (Min.) ; at IC= −1mA
2) Complements the SST4401 / MMST4401 / PN4401
0.45 ± 0.1
5
˚C
2.3
˚C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
BVCBO
−40
−
−
V
IC= −100µA
BVCEO
−40
−
−
V
IC= −1mA
BVEBO
−5
−
−
V
IE= −100µA
Collector cutoff current
ICBO
−
−
−0.1
µA
VCB= −35V
Emitter cutoff current
IEBO
−
−
−0.1
µA
VEB= −5V
−
−
−0.4
−
−
−0.75
−0.75
−
−0.95
−
30
−
−1.3
−
−
VCE= −1V, IC= −0.1mA
60
−
−
VCE= −1V, IC= −1mA
100
−
100
−
−
300
20
−
fT
200
−
−
−
Cob
−
−
8.5
pF
VCB= −10V, f=100kHz
Cib
−
−
30
pF
VEB= −0.5V, f=100kHz
Delay time
td
−
−
15
ns
VCC= −30V, VEB(OFF)= −2V, IC= −150mA, IB1= −15mA
Rise time
tr
−
−
20
ns
VCC= −30V, VEB(OFF)= −2V, IC= −150mA, IB1= −15mA
tstg
−
−
225
ns
VCC= −30V, IC= −150mA, IB1= −IB2= −15mA
tf
−
−
30
ns
VCC= −30V, IC= −150mA, IB1= −IB2= −15mA
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
DC current transfer ratio
Transition frequency
Collector output capacitance
Emitter input capacitance
Storage time
Fall time
hFE
V
V
−
Conditions
IC/IB= −150mA/ −15mA
IC/IB= −500mA/ −50mA
IC/IB= −150mA/ −15mA
IC/IB= −500mA/ −50mA
VCE= −1V, IC= −10mA
VCE= −1V, IC= −150mA
VCE= −2V, IC= −500mA
MHz
VCE= −10V, IE=20mA, f=100MHz
Rev.B
1/3
SST4403 / MMST4403 / 2N4403
Transistors
zElectrical characteristic curves
100
1000
500
400
50
VCE=10V
100
300
200
1V
100
1B=0µA
10
0.1
0
0
10
5
COLLECTOR-EMITTER VOLTAGE : VCE (V)
1.0
10
COLLECTOR CURRENT : IC (mA)
100
1000
Fig.3 DC current gain vs. collector current ( I )
Fig.1 Grounded emitter output
characteristics
1000
1.8
VCE=10V
Ta=25˚C
IC / IB=10
1.6
DC CURRENT GAIN : hFE
1.4
1.2
1.0
Ta=125˚C
Ta=25˚C
100
0.8
0.6
0.4
Ta= −55˚C
0.2
0
1.0
10
100
1000
COLLECTOR CURRENT : IC (mA)
10
0.1
1.0
1000
AC CURRENT GAIN : hFE
Ta=25˚C
VCE=10V
f=1kHz
100
1.0
10
COLLECTOR CURRENT : IC (mA)
100
1000
Fig.4 DC current gain vs. collector current ( II )
Fig.2 Base-emitter saturation
voltage vs. collector current
10
0.1
10
COLLECTOR CURRENT : IC (mA)
100
Fig.5 AC current gain vs. collector current
1000
COLLECTOR-EMITTER
SATURATION VOLTAGE : VCE (sat) (V)
BASE-EMITTER SATURATION VOLTAGE : VBE (sat) (V)
Ta=25˚C
600
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC (mA)
Ta=25˚C
Ta=25˚C
IC / IB=10
0.3
0.2
0.1
0
1.0
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current
Rev.B
2/3
SST4403 / MMST4403 / 2N4403
1.2
1.0
0.8
0.6
0.4
0.2
100
10
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Cib
10
Cob
1000
300MHz
200MHz
10
250MHz
1
200MHz
0.1
1
Fig.8 Gain bandwidth product
vs. collector current
1000
VCC=30V
100
10V
10
100
COLLECTOR CURRENT : IC (mA)
1000
Fig.9 Gain bandwidth product
500
Ta=25˚C
IC / IB=10
TURN ON TIME : ton (ns)
CAPACITANCE (pF)
Ta=25˚C
f=1MHz
100
Ta=25˚C
100MHz
COLLECTOR CURRENT : IC (mA)
Fig.7 Grounded emitter propagation
characteristics
100
10
COLLECTOR-EMITTER VOLTAGE : VCE(V)
1.4
Ta=25˚C
VCE=10V
Ta=25˚C
VCC=30V
IC / IB=10
RISE TIME : tr (ns)
Ta=25˚C
VCE=10V
1.6
0
1.0
100
1000
1.8
CURRENT GAIN-BANDWIDTH PRODUCT : fT (MHz)
BASE-EMITTER ON VOLTAGE : VBE(on) (V)
Transistors
100
10
1
0.1
10
1
10
REVERSE BIAS VOLTAGE (V)
100
1
100
10
1000
5
1
10
100
COLLECTOR CURRENT : IC (mA)
1000
Fig.12 Rise time vs. collector
current
Ta=25˚C
VCC=30V
IC=10IB1=10IB2
FALL TIME : tf (ns)
STORAGE TIME : ts (ns)
Ta=25˚C
VCC=30V
IC=10IB1=10IB2
1000
Fig.11 Turn-on time vs.collector
current
Fig.10 Input /output capacitance
vs. voltage
1000
10
100
COLLECTOR CURRENT : IC (mA)
100
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.13 Storage time vs. collector
current
10
1
10
100
COLLECTOR CURRENT : IC (mA)
1000
Fig.14 Fall time vs. collector
current
Rev.B
3/3
Appendix
Notes
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means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
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otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1