SSTA56 / MMSTA56 Transistors PNP general purpose transistor SSTA56 / MMSTA56 zFeatures zExternal dimensions (Unit : mm) 1) BVCEO 40V (IC = 100PA) 2) Complements the SSTA06 / MMSTA06. SSTA56 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 0.45±0.1 0.95 0.95 zPackage, marking and packaging specifications Part No. SSTA56 MMSTA56 Packaging type SST3 SMT3 Marking R2G R2G Code T116 T146 Basic ordering unit (pieces) 3000 3000 2.4± 0.2 (2) 0.2 1.3+ −0.1 (1) 0~0.1 0.2Min. (3) (1) Emitter (2) Base (3) Collector +0.1 0.15 −0.06 0.4 +0.1 −0.05 ROHM : SST3 JEDEC : SOT-23 All terminals have same dimensions MMSTA56 2.9±0.2 1.1 +0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 2.8± 0.2 (2) 0.2 1.6 + −0.1 (1) 0~0.1 +0.1 0.15 −0.06 0.4 +0.1 −0.05 All terminals have same dimensions 0.3Min. (3) ROHM : SMT3 EIAJ : SC-59 JEDEC : SOT-346 (1) Emitter (2) Base (3) Collector zAbsolute maximum ratings (Ta=25qC) Symbol Limits Unit Collector-base voltage Parameter VCBO −80 V Collector-emitter voltage VCEO −80 V Emitter-base voltage VEBO −4 V IC −0.5 A 0.2 W Collector current Collector power dissipation PC Junction temperature Tj 0.35 150 W °C Storage temperature Tstg −55 to +150 °C ∗ ∗ Mounted on a 7×5×0.6mm CERAMIC SUBSTRATE zElectrical characteristics (Ta=25qC) Parameter Unit V V Symbol Min. Typ. Max. Emitter-base breakdown voltage BVEBO −4 − − Collector-emitter breakdown voltage BVCEO −80 − − ICBO − − −0.1 ICEO − − −1 Collector-emitter saturation voltage VCE(sat) − − 0.25 V IC /IB= −100mA/−10mA Base-emitter saturation voltage VBE(on) V VCE/IB= −1V/100mA Collector cutoff current DC current transfer ratio Transition frequency hFE fT − − −1.2 100 − − 100 − − 50 − − μA − MHz Conditions IC = −100mA IC = −1mA VCB= −80V VCE= −60V VCE= −1V , IC = −10mA VCE= −1V , IC = −100mA VCE= −1V , IE= 100mA , f=100MHz Rev.A 1/2 SSTA56 / MMSTA56 Transistors zElectrical characteristic curves 1000 A 2.5m 2.0mA 300 1.5mA 0.5mA 100 IB=0mA 0 0 2.0 0.4 0.8 1.2 1.6 VCE-COLLECTOR-EMITTER VOLTAGE (V) 3V 10 VBE(SAT)BASE EMITTER SATURATION VOLTAGE (V) VCE(SAT)COLLECTOR EMITTER SATURATION VOLTAGE (V) Ta=125°C 0.2 25°C −40°C 0.1 0 1 Fig.4 Collector emitter saturation voltage vs. collector current 10 5 10 20 50 100 200 500 1000 IC-COLLECTOR CURRENT (mA) Ta=25°C IC / IB=10 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1000 CURRENT GAIN-BANDWIDTH PRODUCT (MHz) CAPACITANCE (pF) 2 10 100 1000 IC-COLLECTOR CURRENT (mA) Cib 1 10 100 1000 IC-COLLECTOR CURRENT (mA) Fig.3 DC current gain vs. collector current ( ΙΙ ) 1.8 VCE=3V 1.6 1.4 1.2 1.0 Ta=−40°C 0.8 25°C 0.6 125°C 0.4 0.2 0 1 Fig.5 Base-emitter saturation voltage vs. collector current Ta=25°C f=1MHz 100 1.8 10 100 1000 IC-COLLECTOR CURRENT (mA) 500 1 Fig.2 DC current gain vs. collector current ( Ι ) 0.3 25°C −40°C 100 1V Fig.1 Grounded emitter output characteristics IC / IB=10 VCE=3V Ta=125°C VCC=5V 100 1.0mA 200 1000 VBE(ON)BASE EMITTER VOLTAGE (V) 400 Ta=25°C A 5.0m 4.5mA 4.0mA 3.5mA 3.0mA hFE-DC CURRENT GAIN IC-COLLECTOR CURRENT (mA) Ta=25°C hFE-DC CURRENT GAIN 500 1 10 100 1000 IC-COLLECTOR CURRENT (mA) Fig.6 Grounded emitter propagation characteristics Ta=25°C VCE=10V 100 Cob 10 5 0.5 1 10 REVERSE BIAS VOLTAGE (V) Fig.7 Input/output capecitance vs. voltage 50 ! 10 1 10 100 1000 IC-COLLECTOR CURRENT (mA) Fig.8 Gain bandwidth product vs. collector current Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1