2SD2444K Transistors Power Transistor (15V, 1A) 2SD2444K zFeatures 1) Low saturation voltage, VCE(sat) = 0.3V (Max.) at IC / IB = 0.4A / 20mA. 2) IC = 1A 3) Complements the 2SB1590K. zExternal dimensions (Unit : mm) SMT3 2.9 1.1 0.4 0.8 1.6 2.8 (3) (2) (1) 0.3Min. zPackaging specification and hFE 0.95 0.95 0.15 Type 2SD2444K Package SMT3 hFE R Marking 1.9 (1)Emitter (2)Base Each lead has same dimensions (3)Collector BS∗ Code T146 Basic ordering unit (pieces) 3000 ∗ Denotes h FE zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 6 V Collector current IC 1 A (DC) Collector power dissipation PC 0.2 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 15 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 15 − − V IC=1mA Emitter-base breakdown voltage BVEBO 6 − − V IE=50µA Collector cutoff current ICBO − − 0.5 µA VCB=12V Emitter cutoff current IEBO − − 0.5 µA VEB=5V Parameter Conditions VCE(sat) − − 0.3 V IC=400mA, IB=20mA hFE 180 − 390 − VCE/IC=2V/50mA Transition frequency fT − 200 − MHz Output capacitance Cob − 15 − pF Collector-emitter saturation voltage DC current transfer ratio VCE=2V, IE= −50mA, f=100MHz VCB=10V, IE=0A, f=1MHz Rev.A 1/2 2SD2444K Transistors 1 50 25 0 0 25 50 75 100 125 50m 20m 10m 5m 2m 1m 0 150 AMBIENT TEMPERATURE : Ta (°C) Fig.1 Grounded emitter output characteristics 1000 DC CURRENT GAIN : hFE 200 100 50 20 2m 5m 10m 20m 50m 100m 200m 500m 1 100m VCE=2V Ta=125°C 25°C −40°C 200 100 50 50m 20m 10m 5m 2m 1m 1m 2m 2m 5m 10m 20m 50m 100m 200m 500m 1 Fig.5 DC collector gain vs. collector current ( ) Ta=125°C 25°C −40°C 5m 10m 20m 50m 100m 200m 500m 1 COLLECTOR CURRENT : IC (A) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) 0.3 0.2 IB=1mA 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig.3 Grounded emitter output characteristics Fig.4 DC current gain vs. collector current ( ) 200m 2mA 0.4 Fig.2 Grounded emitter propagation characteristics 1m 1000 lC/lB=20 3mA COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : lC (A) 1 0.6 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : lC (A) 500m 4mA 0 20 TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 1m 5mA 0.5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 500 DC CURRENT GAIN : hFE VCE=5V 2V 1V 500 6mA 10mA 0.8 9mA 8mA 0.7 7mA 0.1 1000 Ta=25°C COLLECTOR CURRENT : IC (A) 75 Ta=125°C 25°C −40°C 200m 100m Ta=25°C 0.9 100 50 20 20m 50m 100m 200m 500m EMITTER CURRENT : lE (A) Fig.8 Transition frequency vs. emitter current Ta=25°C 200m 100m 50m lC/lB=50 20 10 20m 10m 5m 2m 1m 1m 2m 5m 10m 20m 50m 100m 200m 500m 1 Fig.6 Collector-emitter saturation voltage vs. collector current ( ) 200 10 10m 1 500m COLLECTOR CURRENT : IC (A) Ta=25°C f=100MHz VCE=2V 500 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 100 1.0 Ta=25°C VCE=2V 500m 1 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) COLLECTOR CURRENT : IC (A) POWER DISSIPATION : PC / PC Max. (%) zElectrical characteristic curves 1000 Ta=25°C f=1MHz lE=0A 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.9 Collector output capacitance vs. collector-base voltage Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. 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In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1