AOW10T60P/AOWF10T60P 600V,10A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM 40A RDS(ON),max < 0.7Ω Qg,typ 26nC Eoss @ 400V 3.5µJ Applications 100% UIS Tested 100% Rg Tested • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom TO-262F TO-262 Top View Bottom View Top View S D G AOW10T60P S D D Bottom View G G D S S D G G S AOWF10T60P Orderable Part Number Package Type Form Minimum Order Quantity AOW10T60P AOWF10T60P TO-262 TO-262F Tube Tube 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS TC=25°C Continuous Drain Current Avalanche Current C TC=100°C C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt J TC=25°C Power Dissipation B Derate above 25°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D ID ±30 Units V V 10 10* 6.6 6.6* A IDM 40 IAR 10 A EAR 50 mJ EAS 480 50 15 mJ dv/dt PD -55 to 150 W W/°C °C 300 °C 28 0.2 TL Symbol RθJA V/ns 208 1.7 TJ, TSTG RθCS Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.2.0: April 2014 AOWF10T60P 600 VGS Gate-Source Voltage Pulsed Drain Current AOW10T60P AOW10T60P AOWF10T60P 65 65 °C/W 0.5 0.6 -4.5 °C/W °C/W www.aosmd.com Units Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 700 ID=250µA, VGS=0V 0.56 VDS=600V, VGS=0V 1 10 Gate-Body leakage current VDS=0V, VGS=±30V VDS=5V, ID=250µA RDS(ON) VGS=10V, ID=5A gFS Forward Transconductance VDS=40V, ID=5A 8.8 VSD Diode Forward Voltage IS=1A,VGS=0V 0.74 IS ISM ±100 nA 5 V 0.58 0.7 Ω 1 V Maximum Body-Diode Continuous Current 10 A Maximum Body-Diode Pulsed Current C 40 A Coss Output Capacitance Co(er) Effective output capacitance, energy related H Crss Effective output capacitance, time related I Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge S 1595 pF 56 pF 42 pF 74 pF VGS=0V, VDS=100V, f=1MHz 11 pF f=1MHz 1.7 Ω VGS=10V, VDS=480V, ID=10A 8.1 nC VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs 3 µA 4.3 DYNAMIC PARAMETERS Input Capacitance Ciss Co(tr) V/ oC VDS=480V, TJ=125°C Gate Threshold Voltage Static Drain-Source On-Resistance IGSS VGS(th) V 26 40 nC Qgd Gate Drain Charge 8.2 nC tD(on) Turn-On DelayTime 42 ns tr Turn-On Rise Time 54 ns tD(off) Turn-Off DelayTime VGS=10V, VDS=300V, ID=10A, RG=25Ω 52 ns tf trr 24 ns Body Diode Reverse Recovery Time IF=10A,dI/dt=100A/µs,VDS=100V 497 Qrr Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=100V 7.3 ns µC Turn-Off Fall Time A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=4A, VDD=150V, RG=25Ω, Starting TJ=25°C. H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS. I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS. J. ISD≤ID, di/dt≤200A/µs, VDD=400V, TJ≤TJ(MAX). THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: April 2014 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 20 VDS=40V 10V -55°C 16 10 7V ID(A) ID (A) 12 125°C 8 1 6.5V 4 VGS=5.5V 25°C 6V 0 0.1 0 5 10 15 20 25 30 2 4 VDS (Volts) Figure 1: On-Region Characteristics Normalized On-Resistance 1.6 RDS(ON) (Ω) 8 10 3 2 1.2 VGS=10V 0.8 0.4 2.5 2 0 5 10 15 20 1 0.5 0 -100 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2 1E+01 1.1 1E+00 IS (A) 1E+02 0 50 100 150 200 125°C 1E-01 0.9 1E-02 0.8 1E-03 0.7 -100 -50 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.3 1 VGS=10V ID=5A 1.5 0 BVDSS (Normalized) 6 VGS(Volts) Figure 2: Transfer Characteristics 25°C 1E-04 -50 0 50 100 150 200 TJ (°C) Figure 5: Break Down vs. Junction Temperature Rev.2.0: April 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 1000 Capacitance (pF) VGS (Volts) Ciss VDS=480V ID=10A 12 9 6 Coss 100 Crss 10 3 0 1 0 8 16 24 32 40 0.1 1 10 100 7.5 15 6 12 4.5 Eoss 3 9 6 3 1.5 0 0 0 100 200 300 400 500 600 0 VDS (Volts) Figure 9: Coss stored Energy 25 50 75 100 125 150 TCASE (°C) Figure 10: Current De-rating (Note F) 100 100 10µs RDS(ON) limited 10 1ms DC 10ms 0.1 100µs ID (Amps) 1 10µs RDS(ON) limited 10 100µs ID (Amps) 1000 VDS (Volts) Figure 8: Capacitance Characteristics Current rating ID(A) Eoss(uJ) Qg (nC) Figure 7: Gate-Charge Characteristics 1ms 1 10ms DC 0.1s 0.1 TJ(Max)=150°C TC=25°C 1s TJ(Max)=150°C TC=25°C 0.01 0.01 1 10 100 1000 VDS(Volts) Figure 11: Maximum Forward Biased Safe Operating Area for TO-262 (Note F) Rev.2.0: April 2014 www.aosmd.com 1 10 100 1000 VDS(Volts) Figure 12: Maximum Forward Biased Safe Operating Area for TO-262F (Note F) Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.6°C/W 0.1 PD Single Pulse 0.01 Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for TO-262 (Note F) ZθJC Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=4.5°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 14: Normalized Maximum Transient Thermal Impedance for TO-262F (Note F) Rev.2.0: April 2014 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.2.0: April 2014 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6