Datasheet

AOT10T60/AOTF10T60
600V,10A N-Channel MOSFET
General Description
Product Summary
The AOT10T60 & AOTF10T60 are fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.By providing low RDS(on), Ciss
and Crss along with guaranteed avalanche capability these
parts can be adopted quickly into new and existing offline
power supply designs.
VDS @ Tj,max
700V
IDM
40A
RDS(ON),max
< 0.7Ω
Qg,typ
23nC
Eoss @ 400V
3.4µJ
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT10T60L & AOTF10T60L
Top View
TO-220
TO-220F
D
D
G
D
AOT10T60
G
S
AOTF10T60
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
AOT10T60
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
TC=100°C
ID
S
AOTF10T60
600
AOTF10T60L
±30
Units
V
V
10
10*
10*
6.6
6.6*
6.6*
A
Pulsed Drain Current C
IDM
Avalanche Current C,J
IAR
10
A
Repetitive avalanche energy C,J
EAR
50
mJ
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B
Derate above 25oC
EAS
480
50
5
43
mJ
40
dv/dt
208
PD
1.7
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
TL
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient A,D
RθJA
Maximum Case-to-sink A
RθCS
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev.4.0: April 2014
0.34
-55 to 150
V/ns
32
W
0.26
W/ oC
°C
300
AOT10T60
65
0.5
0.6
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AOTF10T60
65
-2.9
°C
AOTF10T60L
65
-3.9
Units
°C/W
°C/W
°C/W
Page 1 of 7
AOT10T60/AOTF10T60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
600
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=150°C
700
V
ID=250µA, VGS=0V
0.55
V/ oC
VDS=600V, VGS=0V
1
VDS=480V, TJ=125°C
10
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=5A
gFS
Forward Transconductance
VDS=40V, ID=5A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
±100
3
µA
4
5
nΑ
V
0.6
0.7
Ω
1
V
9
0.74
S
IS
Maximum Body-Diode Continuous Current
10
A
ISM
Maximum Body-Diode Pulsed Current C
40
A
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
related H
Crss
Effective output capacitance, time
related I
Reverse Transfer Capacitance
Rg
Gate resistance
Co(tr)
1346
pF
54
pF
40
pF
72
pF
VGS=0V, VDS=100V, f=1MHz
10
pF
f=1MHz
3.8
Ω
VGS=10V, VDS=480V, ID=10A
6.9
nC
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
Qgs
Gate Source Charge
23
35
nC
Qgd
Gate Drain Charge
6.7
nC
tD(on)
Turn-On DelayTime
37
ns
tr
Turn-On Rise Time
60
ns
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=300V, ID=10A,
RG=25Ω
53
ns
tf
trr
Turn-Off Fall Time
35
ns
IF=10A,dI/dt=100A/µs,VDS=100V
477
Qrr
Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=100V
6.7
ns
µC
Body Diode Reverse Recovery Time
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=4A, VDD=150V, RG=25Ω, Starting TJ=25°C.
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. L=1.0mH, VDD=150V, RG=25Ω, Starting TJ=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.4.0: April 2014
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Page 2 of 7
AOT10T60/AOTF10T60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
20
10V
-55°C
VDS=40V
16
7V
10
ID (A)
12
ID(A)
6.5V
125°C
8
1
6V
25°C
4
VGS=5.5V
0
0
5
10
15
20
25
0.1
30
2
4
VDS (Volts)
Fig 1: On-Region Characteristics
2.0
8
10
Normalized On-Resistance
3
1.6
RDS(ON) (Ω)
6
VGS(Volts)
Figure 2: Transfer Characteristics
VGS=10V
1.2
0.8
0.4
2.5
VGS=10V
ID=5A
2
1.5
1
0.5
0.0
0
5
10
15
20
0
-100
25
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1E+02
1.2
40
125°C
1E+00
IS (A)
BVDSS (Normalized)
1E+01
1.1
1
1E-01
25°C
1E-02
0.9
1E-03
0.8
-100
1E-04
-50
0
50
100
150
200
TJ (°C)
Figure 5:Break Down vs. Junction Temperature
Rev.4.0: April 2014
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 7
AOT10T60/AOTF10T60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
Capacitance (pF)
VGS (Volts)
Ciss
VDS=480V
ID=10A
12
9
6
1000
Coss
100
Crss
10
3
1
0
0
8
16
24
32
0.1
40
1
10
100
1000
VDS (Volts)
Figure 8: Capacitance Characteristics
10
15
8
12
Current rating ID(A)
Eoss(uJ)
Qg (nC)
Figure 7: Gate-Charge Characteristics
6
Eoss
4
2
9
6
3
0
0
0
100
200
300
400
500
600
25
50
75
100
125
150
TCASE (°C)
Figure 10: Current De-rating (Note B)
VDS (Volts)
Figure 9: Coss stored Energy
Rev.4.0: April 2014
0
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Page 4 of 7
AOT10T60/AOTF10T60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10µs
RDS(ON)
limited
10
100µs
1
1ms
DC
10ms
ID (Amps)
ID (Amps)
10
10µs
RDS(ON)
limited
100µs
1ms
1
10ms
DC
0.1
0.1s
0.1
TJ(Max)=150°C
TC=25°C
1s
TJ(Max)=150°C
TC=25°C
0.01
0.01
1
10
100
1000
VDS (Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOT10T60 (Note F)
1
10
100
1000
VDS (Volts)
Figure 12: Maximum Forward Biased Safe
Operating Area for AOTF10T60 (Note F)
100
10µs
RDS(ON)
limited
10
ID (Amps)
100µs
1ms
1
10ms
DC
0.1s
0.1
1s
TJ(Max)=150°C
TC=25°C
0.01
1
10
100
1000
VDS (Volts)
Figure 13: Maximum Forward Biased Safe
Operating Area for AOTF10T60L (Note F)
Rev.4.0: April 2014
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Page 5 of 7
AOT10T60/AOTF10T60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.6°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Single Pulse
0.01
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOT10T60 (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.9°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance for AOTF10T60 (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3.9°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance for AOTF10T60L (Note F)
Rev.4.0: April 2014
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Page 6 of 7
AOT10T60/AOTF10T60
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.4.0: April 2014
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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Page 7 of 7