AOT10T60/AOTF10T60 600V,10A N-Channel MOSFET General Description Product Summary The AOT10T60 & AOTF10T60 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max 700V IDM 40A RDS(ON),max < 0.7Ω Qg,typ 23nC Eoss @ 400V 3.4µJ 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT10T60L & AOTF10T60L Top View TO-220 TO-220F D D G D AOT10T60 G S AOTF10T60 G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOT10T60 Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ID S AOTF10T60 600 AOTF10T60L ±30 Units V V 10 10* 10* 6.6 6.6* 6.6* A Pulsed Drain Current C IDM Avalanche Current C,J IAR 10 A Repetitive avalanche energy C,J EAR 50 mJ Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC EAS 480 50 5 43 mJ 40 dv/dt 208 PD 1.7 Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RθJA Maximum Case-to-sink A RθCS Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.4.0: April 2014 0.34 -55 to 150 V/ns 32 W 0.26 W/ oC °C 300 AOT10T60 65 0.5 0.6 www.aosmd.com AOTF10T60 65 -2.9 °C AOTF10T60L 65 -3.9 Units °C/W °C/W °C/W Page 1 of 7 AOT10T60/AOTF10T60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 700 V ID=250µA, VGS=0V 0.55 V/ oC VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5A gFS Forward Transconductance VDS=40V, ID=5A VSD Diode Forward Voltage IS=1A,VGS=0V ±100 3 µA 4 5 nΑ V 0.6 0.7 Ω 1 V 9 0.74 S IS Maximum Body-Diode Continuous Current 10 A ISM Maximum Body-Diode Pulsed Current C 40 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Co(er) Effective output capacitance, energy related H Crss Effective output capacitance, time related I Reverse Transfer Capacitance Rg Gate resistance Co(tr) 1346 pF 54 pF 40 pF 72 pF VGS=0V, VDS=100V, f=1MHz 10 pF f=1MHz 3.8 Ω VGS=10V, VDS=480V, ID=10A 6.9 nC VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg Qgs Gate Source Charge 23 35 nC Qgd Gate Drain Charge 6.7 nC tD(on) Turn-On DelayTime 37 ns tr Turn-On Rise Time 60 ns tD(off) Turn-Off DelayTime VGS=10V, VDS=300V, ID=10A, RG=25Ω 53 ns tf trr Turn-Off Fall Time 35 ns IF=10A,dI/dt=100A/µs,VDS=100V 477 Qrr Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=100V 6.7 ns µC Body Diode Reverse Recovery Time A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=4A, VDD=150V, RG=25Ω, Starting TJ=25°C. H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS. I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS. J. L=1.0mH, VDD=150V, RG=25Ω, Starting TJ=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.4.0: April 2014 www.aosmd.com Page 2 of 7 AOT10T60/AOTF10T60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 20 10V -55°C VDS=40V 16 7V 10 ID (A) 12 ID(A) 6.5V 125°C 8 1 6V 25°C 4 VGS=5.5V 0 0 5 10 15 20 25 0.1 30 2 4 VDS (Volts) Fig 1: On-Region Characteristics 2.0 8 10 Normalized On-Resistance 3 1.6 RDS(ON) (Ω) 6 VGS(Volts) Figure 2: Transfer Characteristics VGS=10V 1.2 0.8 0.4 2.5 VGS=10V ID=5A 2 1.5 1 0.5 0.0 0 5 10 15 20 0 -100 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+02 1.2 40 125°C 1E+00 IS (A) BVDSS (Normalized) 1E+01 1.1 1 1E-01 25°C 1E-02 0.9 1E-03 0.8 -100 1E-04 -50 0 50 100 150 200 TJ (°C) Figure 5:Break Down vs. Junction Temperature Rev.4.0: April 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AOT10T60/AOTF10T60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 Capacitance (pF) VGS (Volts) Ciss VDS=480V ID=10A 12 9 6 1000 Coss 100 Crss 10 3 1 0 0 8 16 24 32 0.1 40 1 10 100 1000 VDS (Volts) Figure 8: Capacitance Characteristics 10 15 8 12 Current rating ID(A) Eoss(uJ) Qg (nC) Figure 7: Gate-Charge Characteristics 6 Eoss 4 2 9 6 3 0 0 0 100 200 300 400 500 600 25 50 75 100 125 150 TCASE (°C) Figure 10: Current De-rating (Note B) VDS (Volts) Figure 9: Coss stored Energy Rev.4.0: April 2014 0 www.aosmd.com Page 4 of 7 AOT10T60/AOTF10T60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10µs RDS(ON) limited 10 100µs 1 1ms DC 10ms ID (Amps) ID (Amps) 10 10µs RDS(ON) limited 100µs 1ms 1 10ms DC 0.1 0.1s 0.1 TJ(Max)=150°C TC=25°C 1s TJ(Max)=150°C TC=25°C 0.01 0.01 1 10 100 1000 VDS (Volts) Figure 11: Maximum Forward Biased Safe Operating Area for AOT10T60 (Note F) 1 10 100 1000 VDS (Volts) Figure 12: Maximum Forward Biased Safe Operating Area for AOTF10T60 (Note F) 100 10µs RDS(ON) limited 10 ID (Amps) 100µs 1ms 1 10ms DC 0.1s 0.1 1s TJ(Max)=150°C TC=25°C 0.01 1 10 100 1000 VDS (Volts) Figure 13: Maximum Forward Biased Safe Operating Area for AOTF10T60L (Note F) Rev.4.0: April 2014 www.aosmd.com Page 5 of 7 AOT10T60/AOTF10T60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.6°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Single Pulse 0.01 Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 14: Normalized Maximum Transient Thermal Impedance for AOT10T60 (Note F) ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.9°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance for AOTF10T60 (Note F) ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3.9°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance for AOTF10T60L (Note F) Rev.4.0: April 2014 www.aosmd.com Page 6 of 7 AOT10T60/AOTF10T60 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.4.0: April 2014 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 7 of 7