AOD2910E 100V N-Channel MOSFET General Description Product Summary • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • ESD protected • Optimized for fast-switching applications VDS Applications ID (at VGS=10V) 100V 37A RDS(ON) (at VGS=10V) < 23mΩ RDS(ON) (at VGS=4.5V) < 33mΩ Typical ESD protection HBM Class 2 100% UIS Tested 100% Rg Tested • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications TO252 DPAK Top View D Bottom View D D G S G S S G Orderable Part Number Package Type Form Minimum Order Quantity AOD2910E TO-252 Tape & Reel 2500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Avalanche Current C Avalanche energy L=0.1mH VDS Spike C 10µs TC=25°C Power Dissipation B Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case Rev.1.0: September 2015 IAS 14 A EAS 10 mJ 120 V 71.5 6.2 Steady-State Steady-State RθJA RθJC www.aosmd.com W 4.0 TJ, TSTG Symbol t ≤ 10s W 35.5 PDSM TA=70°C A 9 PD TA=25°C A A 11 VSPIKE TC=100°C V 70 IDSM TA=70°C ±20 26 IDM TA=25°C Continuous Drain Current Units V 37 ID TC=100°C C Maximum 100 -55 to 175 Typ 15 40 1.7 °C Max 20 50 2.1 Units °C/W °C/W °C/W Page 1 of 6 AOD2910E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1 TJ=55°C 1.6 ±10 µA 2.15 2.7 V 18.5 23 33 42 23.5 33 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=20A 40 VSD Diode Forward Voltage IS=1A, VGS=0V 0.72 IS Maximum Body-Diode Continuous Current TJ=125°C VGS=4.5V, ID=16A DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 VGS=10V, ID=20A Coss Units V VDS=100V, VGS=0V IDSS Max mΩ mΩ S 1 V 37 A 1200 VGS=0V, VDS=50V, f=1MHz f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg(10V) 0.5 pF 93 pF 6.3 pF 1.0 1.5 Ω 16.5 25 nC 8 14 nC Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 3.5 nC Qgd Gate Drain Charge 2.5 nC tD(on) Turn-On DelayTime 6 ns tr Turn-On Rise Time 3 ns tD(off) Turn-Off DelayTime 22 ns tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=50V, ID=20A VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω 3 ns IF=20A, di/dt=500A/µs 25 Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs 120 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: September 2015 www.aosmd.com Page 2 of 6 AOD2910E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 10V 50 4.5V VDS=5V 40 40 4V 6V 30 ID (A) ID (A) 30 3.5V 20 125°C 20 10 25°C 10 VGS=3V 0 0 0 1 2 3 4 1 5 2 3 4 5 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 30 2.4 25 RDS(ON) (mΩ) Normalized On-Resistance 2.2 VGS=4.5V 20 VGS=10V 15 2 VGS=10V ID=20A 1.8 1.6 1.4 VGS=4.5V ID=16A 1.2 1 0.8 10 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 50 1.0E+02 ID=20A 1.0E+01 1.0E+00 IS (A) RDS(ON) (mΩ) 40 125°C 30 1.0E-01 125°C 25°C 1.0E-02 1.0E-03 20 1.0E-04 25°C 10 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: September 2015 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOD2910E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1600 VDS=50V ID=20A 1400 Ciss 8 Capacitance (pF) VGS (Volts) 1200 6 4 2 1000 800 600 400 200 0 Coss Crss 0 0 5 10 15 20 0 Qg (nC) Figure 7: Gate-Charge Characteristics 20 40 60 100 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 500 TJ(Max)=175°C TC=25°C 10µs 10µs RDS(ON) limited 400 100µs Power (W) 10.0 ID (Amps) 80 1ms 10ms 1.0 DC TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 300 200 100 0.1 1 10 VDS (Volts) 100 1000 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.1°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: September 2015 www.aosmd.com Page 4 of 6 AOD2910E 100 50 80 40 Current rating ID (A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 40 20 30 20 10 0 0 0 25 50 75 100 125 150 175 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: September 2015 www.aosmd.com Page 5 of 6 AOD2910E Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B: Resistive Switching Test Circuit & Waveforms Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: September 2015 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6