Datasheet

AON7140
40V N-Channel MOSFET
General Description
Product Summary
• Trench Power MV MOSFET technology
• Low RDS(ON)
• Low Gate Charge
ID (at VGS=10V)
VDS
Applications
40V
50A
RDS(ON) (at VGS=10V)
< 2.3mΩ
RDS(ON) (at VGS=4.5V)
< 3.5mΩ
100% UIS Tested
100% Rg Tested
• Synchronous Rectification for AC-DC/DC-DC converter
• Motor drive for 12V-24V systems
• Oring switches
DFN 3.3x3.3
Top View
D
Bottom View
Top View
Pin 1
1
8
2
7
3
6
4
5
G
S
Pin 1
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AON7140
DFN 3.3x3.3
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
C
Avalanche Current C
Avalanche energy
VDS Spike I
L=0.3mH
C
10µs
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: December 2015
31.5
30
A
EAS
135
mJ
VSPIKE
48
V
46
Steady-State
Steady-State
W
18.5
4.1
RθJA
RθJC
W
2.6
TJ, TSTG
Symbol
t ≤ 10s
A
IAS
PDSM
Junction and Storage Temperature Range
A
25.5
PD
TA=25°C
V
200
IDSM
TA=70°C
±20
50
IDM
TA=25°C
Units
V
50
ID
TC=100°C
Maximum
40
-55 to 150
Typ
25
50
1.8
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Max
30
60
2.7
°C
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7140
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
V
1
TJ=55°C
1.4
±100
nA
1.85
2.4
V
1.9
2.3
3.0
3.7
3.5
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
2.7
gFS
Forward Transconductance
VDS=5V, ID=20A
100
VSD
Diode Forward Voltage
IS=1A, VGS=0V
0.67
IS
Maximum Body-Diode Continuous Current G
TJ=125°C
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=20V, f=1MHz
f=1MHz
µA
5
VGS=10V, ID=20A
Coss
Units
40
VDS=40V, VGS=0V
IDSS
Max
mΩ
S
1
V
50
A
3350
pF
580
pF
65
pF
0.85
1.3
Ω
SWITCHING PARAMETERS
Total Gate Charge
Qg(10V)
42
60
nC
Qg(4.5V)
Total Gate Charge
18
26
Qgs
Gate Source Charge
Qgd
tD(on)
VGS=10V, VDS=20V, ID=20A
0.4
mΩ
nC
11.5
nC
Gate Drain Charge
3.5
nC
Turn-On DelayTime
9
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=20V, RL=1.0Ω,
RGEN=3Ω
3.5
ns
34
ns
3
ns
IF=20A, di/dt=500A/µs
16
Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs
42
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
I. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: December 2015
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Page 2 of 6
AON7140
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
4.5V
100
3.5V
VDS=5V
80
80
10V
60
ID (A)
ID (A)
60
40
125°C
40
20
25°C
20
VGS=3V
0
0
0
1
2
3
4
1
5
3
4
5
VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
5
Normalized On-Resistance
2
4
RDS(ON) (mΩ)
2
VGS=4.5V
3
2
VGS=10V
1
1.8
VGS=10V
ID=20A
1.6
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
6
1.0E+01
ID=20A
1.0E+00
4
125°C
1.0E-01
125°C
IS (A)
RDS(ON) (mΩ)
5
3
2
1.0E-02
25°C
1.0E-03
25°C
1
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: December 2015
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
Page 3 of 6
AON7140
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
4000
VDS=20V
ID=20A
Ciss
3500
8
Capacitance (pF)
VGS (Volts)
3000
6
4
2
2500
2000
1500
1000
0
0
0
10
20
30
40
50
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
40
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
limited
400
10µs
100µs
1ms
10ms
10.0
1.0
300
200
DC
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
0.1
100
1
VDS (Volts)
10
100
0
0.0001
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
20
500
Power (W)
ID (Amps)
100.0
10
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
ZθJC Normalized Transient
Thermal Resistance
Coss
Crss
500
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=2.7°C/W
1
0.1
PDM
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: December 2015
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Page 4 of 6
AON7140
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
50
50
Current rating ID (A)
40
30
20
10
40
30
20
10
0
0
0
25
50
75
100
125
150
0
TCASE (°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=60°C/W
0.1
PDM
0.01
Single Pulse
Ton
0.001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: December 2015
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Page 5 of 6
AON7140
Figure
A: Charge
Gate Charge
Test Circuit
& Waveforms
Gate
Test Circuit
& Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Figure B:Resistive
ResistiveSwitching
Switching Test
Test Circuit
Circuit&&Waveforms
Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Figure C:
UnclampedInductive
InductiveSwitching
Switching (UIS) Test
Unclamped
TestCircuit
Circuit&&Waveforms
Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Figure
D: Recovery
Diode Recovery
Test Circuit
& Waveforms
Diode
Test Circuit
& Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: December 2015
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6