Datasheet

AON7566
30V N-Channel AlphaMOS
General Description
Product Summary
VDS
• Trench Power AlphaMOS (αMOS LV) technology
• Low RDS(ON)
• Optimized for load switch
• High Current Capability
• ESD protected
• RoHS and Halogen-Free Compliant
Applications
ID (at VGS=10V)
30V
34A
RDS(ON) (at VGS=10V)
< 3.7mΩ
RDS(ON) (at VGS=4.5V)
< 5.2mΩ
Typical ESD protection
HBM Class 2
100% UIS Tested
100% Rg Tested
• NB Battery Pack
DFN 3x3 EP
Bottom View
Top View
D
Top View
1
8
2
7
3
6
4
5
Pin 1
G
S
Pin 1
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AON7566
DFN 3x3 EP
Tape & Reel
5000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
Avalanche energy
L=0.1mH
VDS Spike
10µs
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0 : October 2015
IAS
30
A
EAS
45
mJ
VSPIKE
36
V
30
Steady-State
Steady-State
W
12
5
RθJA
RθJC
W
3.2
TJ, TSTG
Symbol
t ≤ 10s
A
23
PDSM
Junction and Storage Temperature Range
A
28
PD
TA=25°C
V
135
IDSM
TA=70°C
±20
34
IDM
TA=25°C
Units
V
34
ID
TC=100°C
Maximum
30
-55 to 150
Typ
20
45
3.5
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Max
25
55
4.2
°C
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7566
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
V
1
TJ=55°C
1.4
±10
µA
1.9
2.4
V
3.0
3.7
4.5
5.5
5.2
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
4.1
gFS
Forward Transconductance
VDS=5V, ID=20A
90
VSD
Diode Forward Voltage
IS=1A, VGS=0V
0.68
IS
Maximum Body-Diode Continuous Current G
TJ=125°C
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
f=1MHz
µA
5
VGS=10V, ID=20A
Coss
Units
30
VDS=30V, VGS=0V
IDSS
Max
mΩ
S
1
V
34
A
3020
pF
330
pF
280
pF
2
3
Ω
SWITCHING PARAMETERS
Total Gate Charge
Qg(10V)
57
80
nC
Qg(4.5V)
Total Gate Charge
28
40
Qgs
Gate Source Charge
Qgd
tD(on)
VGS=10V, VDS=15V, ID=20A
1
mΩ
nC
9.5
nC
Gate Drain Charge
10
nC
Turn-On DelayTime
7.5
ns
10
ns
49
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
13
ns
IF=20A, di/dt=500A/µs
12
Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs
20
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0 : October 2015
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Page 2 of 6
AON7566
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
80
3.5V
60
VDS=5V
3.2V
4.5V
60
3V
ID (A)
ID (A)
10V
40
20
125°C
40
25°C
20
VGS=2.5V
0
0
0
1
2
3
4
1
5
3
4
5
VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
1.8
5
Normalized On-Resistance
6
RDS(ON) (mΩ)
2
VGS=4.5V
4
3
VGS=10V
2
1
1.6
VGS=10V
ID=20A
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature (Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
10
1.0E+01
ID=20A
1.0E+00
1.0E-01
6
125°C
IS (A)
RDS(ON) (mΩ)
8
125°C
1.0E-02
4
25°C
1.0E-03
25°C
2
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0 : October 2015
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
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AON7566
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4500
10
VDS=15V
ID=20A
4000
Ciss
3500
Capacitance (pF)
VGS (Volts)
8
6
4
3000
2500
2000
1500
1000
2
Coss
500
0
Crss
0
0
10
20
30
40
50
60
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
15
20
25
30
400
TJ(Max)=150°C
TC=25°C
10µs
100.0
300
10.0
100µs
1.0
1ms
10ms
Power (W)
10µs
RDS(ON)
limited
ID (Amps)
10
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
200
DC
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
100
0.1
1
10
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
100
0
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
10
ZθJC Normalized Transient
Thermal Resistance
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=4.2°C/W
1
0.1
PDM
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0 : October 2015
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Page 4 of 6
AON7566
40
40
35
35
30
30
Current rating ID (A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
25
20
15
10
5
5
0
0
0
25
50
75
100
125
150
0
TCASE (°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=55°C/W
0.1
0.01
PDM
Single Pulse
Ton
0.001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0 : October 2015
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Page 5 of 6
AON7566
Figure
A: Charge
Gate Charge
Test Circuit
& Waveforms
Gate
Test Circuit
& Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Figure B:Resistive
ResistiveSwitching
Switching Test
Test Circuit
Circuit&&Waveforms
Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Figure C:
UnclampedInductive
InductiveSwitching
Switching (UIS) Test
Unclamped
Test Circuit
Circuit&&Waveforms
Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Figure
D: Recovery
Diode Recovery
Test Circuit
& Waveforms
Diode
Test Circuit
& Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.1.0 : October 2015
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6