AON7566 30V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Optimized for load switch • High Current Capability • ESD protected • RoHS and Halogen-Free Compliant Applications ID (at VGS=10V) 30V 34A RDS(ON) (at VGS=10V) < 3.7mΩ RDS(ON) (at VGS=4.5V) < 5.2mΩ Typical ESD protection HBM Class 2 100% UIS Tested 100% Rg Tested • NB Battery Pack DFN 3x3 EP Bottom View Top View D Top View 1 8 2 7 3 6 4 5 Pin 1 G S Pin 1 Orderable Part Number Package Type Form Minimum Order Quantity AON7566 DFN 3x3 EP Tape & Reel 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH VDS Spike 10µs TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0 : October 2015 IAS 30 A EAS 45 mJ VSPIKE 36 V 30 Steady-State Steady-State W 12 5 RθJA RθJC W 3.2 TJ, TSTG Symbol t ≤ 10s A 23 PDSM Junction and Storage Temperature Range A 28 PD TA=25°C V 135 IDSM TA=70°C ±20 34 IDM TA=25°C Units V 34 ID TC=100°C Maximum 30 -55 to 150 Typ 20 45 3.5 www.aosmd.com Max 25 55 4.2 °C Units °C/W °C/W °C/W Page 1 of 6 AON7566 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA V 1 TJ=55°C 1.4 ±10 µA 1.9 2.4 V 3.0 3.7 4.5 5.5 5.2 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A 4.1 gFS Forward Transconductance VDS=5V, ID=20A 90 VSD Diode Forward Voltage IS=1A, VGS=0V 0.68 IS Maximum Body-Diode Continuous Current G TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MHz µA 5 VGS=10V, ID=20A Coss Units 30 VDS=30V, VGS=0V IDSS Max mΩ S 1 V 34 A 3020 pF 330 pF 280 pF 2 3 Ω SWITCHING PARAMETERS Total Gate Charge Qg(10V) 57 80 nC Qg(4.5V) Total Gate Charge 28 40 Qgs Gate Source Charge Qgd tD(on) VGS=10V, VDS=15V, ID=20A 1 mΩ nC 9.5 nC Gate Drain Charge 10 nC Turn-On DelayTime 7.5 ns 10 ns 49 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 13 ns IF=20A, di/dt=500A/µs 12 Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs 20 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0 : October 2015 www.aosmd.com Page 2 of 6 AON7566 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 3.5V 60 VDS=5V 3.2V 4.5V 60 3V ID (A) ID (A) 10V 40 20 125°C 40 25°C 20 VGS=2.5V 0 0 0 1 2 3 4 1 5 3 4 5 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 1.8 5 Normalized On-Resistance 6 RDS(ON) (mΩ) 2 VGS=4.5V 4 3 VGS=10V 2 1 1.6 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 10 1.0E+01 ID=20A 1.0E+00 1.0E-01 6 125°C IS (A) RDS(ON) (mΩ) 8 125°C 1.0E-02 4 25°C 1.0E-03 25°C 2 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0 : October 2015 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON7566 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4500 10 VDS=15V ID=20A 4000 Ciss 3500 Capacitance (pF) VGS (Volts) 8 6 4 3000 2500 2000 1500 1000 2 Coss 500 0 Crss 0 0 10 20 30 40 50 60 0 Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 25 30 400 TJ(Max)=150°C TC=25°C 10µs 100.0 300 10.0 100µs 1.0 1ms 10ms Power (W) 10µs RDS(ON) limited ID (Amps) 10 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 200 DC TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 100 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 10 ZθJC Normalized Transient Thermal Resistance 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=4.2°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0 : October 2015 www.aosmd.com Page 4 of 6 AON7566 40 40 35 35 30 30 Current rating ID (A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 20 15 10 25 20 15 10 5 5 0 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=55°C/W 0.1 0.01 PDM Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0 : October 2015 www.aosmd.com Page 5 of 6 AON7566 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped Test Circuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.1.0 : October 2015 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6