Datasheet

AON7264E
60V N-Channel AlphaSGT TM
General Description
Product Summary
VDS
• Trench Power AlphaSGTTM technology
• Low RDS(ON)
• Low Gate Charge
• ESD protected
60V
28A
ID (at VGS=10V)
Applications
RDS(ON) (at VGS=10V)
< 9.5mΩ
RDS(ON) (at VGS=4.5V)
< 13.3mΩ
Typical ESD protection
HBM Class 2
100% UIS Tested
100% Rg Tested
• High efficiency power supply
• Secondary synchronus rectifier
Top View
DFN 3x3 EP
Bottom View
D
Top View
PIN1
1
8
2
7
3
6
4
5
G
S
Pin 1
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AON7264E
DFN 3x3 EP
Tape & Reel
5000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
VDS
Parameter
Drain-Source Voltage
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
Avalanche energy
VDS Spike
I
L=0.3mH
C
10µs
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: May 2016
17
17
A
EAS
43
mJ
72
V
27.5
5.0
Steady-State
RθJA
RθJC
W
3.2
TJ, TSTG
Symbol
Steady-State
W
11
PDSM
t ≤ 10s
A
IAS
PD
Junction and Storage Temperature Range
A
13.5
VSPIKE
TA=25°C
V
80
IDSM
TA=70°C
±20
28
IDM
TA=25°C
Units
V
28
ID
TC=100°C
Maximum
60
-55 to 150
Typ
20
45
3.7
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Max
25
55
4.5
°C
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7264E
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Typ
60
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
1
TJ=55°C
VGS=10V, ID=17A
±10
µA
1.8
2.4
V
7.7
9.5
12.5
15.5
10.3
13.3
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS=5V, ID=17A
52
VSD
Diode Forward Voltage
IS=1A, VGS=0V
0.72
IS
Maximum Body-Diode Continuous Current G
TJ=125°C
VGS=4.5V, ID=15A
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=30V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg(10V)
µA
5
1.4
0.6
Units
V
VDS=60V, VGS=0V
IDSS
Max
mΩ
mΩ
S
1
V
28
A
1100
pF
300
pF
28
pF
1.2
2.0
Ω
14.5
25
nC
7
13
nC
Qg(4.5V)
Total Gate Charge
Qgs
Gate Source Charge
2.5
nC
Qgd
Gate Drain Charge
3.5
nC
tD(on)
Turn-On DelayTime
6.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=30V, ID=17A
VGS=10V, VDS=30V, RL=1.75Ω,
RGEN=3Ω
3.5
ns
22
ns
3
ns
IF=17A, di/dt=500A/µs
19
Body Diode Reverse Recovery Charge IF=17A, di/dt=500A/µs
65
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
I. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: May 2016
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Page 2 of 6
AON7264E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
4.5V
80
VDS=5V
4V
6V
80
60
ID (A)
ID (A)
60
3.5V
40
125°C
40
3.0V
20
20
25°C
VGS=2.5V
0
0
0
1
2
3
4
1
5
3
4
5
VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
12
2
Normalized On-Resistance
VGS=4.5V
10
RDS(ON) (mΩ)
2
8
VGS=10V
6
1.8
VGS=10V
ID=17A
1.6
1.4
1.2
VGS=4.5V
ID=15A
1
0.8
4
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
35
1.0E+01
ID=17A
30
1.0E+00
125°C
1.0E-01
20
IS (A)
RDS(ON) (mΩ)
25
125°C
1.0E-02
15
25°C
1.0E-03
10
5
1.0E-04
25°C
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: May 2016
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
Page 3 of 6
AON7264E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1500
VDS=30V
ID=17A
Ciss
1200
Capacitance (pF)
VGS (Volts)
8
6
4
2
900
600
Coss
300
0
0
3
6
9
12
Crss
0
15
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
30
40
50
60
VDS (Volts)
Figure 8: Capacitance Characteristics
500
1000.0
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
limited
10.0
10µs
100µs
1ms
10ms
1.0
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
400
0.1
Power (W)
100.0
ID (Amps)
10
300
200
DC
100
1
VDS (Volts)
10
100
0
1E-05 0.0001 0.001
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=4.5°C/W
1
Single Pulse
0.1
PDM
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: May 2016
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Page 4 of 6
AON7264E
40
40
30
30
Current rating ID (A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
10
20
10
0
0
0
25
50
75
100
125
150
0
TCASE (°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
0.1
PDM
0.01
Single Pulse
Ton
0.001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: May 2016
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Page 5 of 6
AON7264E
Figure
A: Charge
Gate Charge
Test Circuit
& Waveforms
Gate
Test Circuit
& Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Figure B:Resistive
ResistiveSwitching
Switching Test
Test Circuit
Circuit&&Waveforms
Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Figure C:
UnclampedInductive
InductiveSwitching
Switching (UIS) Test
Unclamped
TestCircuit
Circuit&&Waveforms
Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Figure
D: Recovery
Diode Recovery
Test Circuit
& Waveforms
Diode
Test Circuit
& Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: May 2016
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6