AON6262E 60V N-Channel AlphaSGT TM General Description Product Summary VDS • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • ESD protected 60V 40A ID (at VGS=10V) Applications RDS(ON) (at VGS=10V) < 6.2mΩ RDS(ON) (at VGS=4.5V) < 8.5mΩ Typical ESD protection HBM Class 2 100% UIS Tested 100% Rg Tested • High efficiency power supply • Secondary synchronus rectifier DFN5x6 Top View D Top View Bottom View PIN1 1 8 2 7 3 6 4 5 G S PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AON6262E DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDS Parameter Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy VDS Spike I L=0.3mH C 10µs TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: January 2016 23.5 23 A EAS 79 mJ VSPIKE 72 V 48 Steady-State Steady-State W 19 6.2 RθJA RθJC W 4.0 TJ, TSTG Symbol t ≤ 10s A IAS PDSM Junction and Storage Temperature Range A 18.5 PD TA=25°C V 145 IDSM TA=70°C ±20 40 IDM TA=25°C Units V 40 ID TC=100°C Maximum 60 -55 to 150 Typ 15 40 2.1 www.aosmd.com Max 20 50 2.6 °C Units °C/W °C/W °C/W Page 1 of 6 AON6262E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA V 1 TJ=55°C 1.2 ±10 µA 1.65 2.2 V 4.8 6.2 7.8 10 8.5 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A 6.2 gFS Forward Transconductance VDS=5V, ID=20A 75 VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 IS Maximum Body-Diode Continuous Current G TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=30V, f=1MHz f=1MHz µA 5 VGS=10V, ID=20A Coss Units 60 VDS=60V, VGS=0V IDSS Max mΩ S 1 V 40 A 1650 pF 520 pF 52 pF 1.3 2.0 Ω SWITCHING PARAMETERS Total Gate Charge Qg(10V) 30 45 nC Qg(4.5V) Total Gate Charge 15 25 Qgs Gate Source Charge Qgd tD(on) VGS=10V, VDS=30V, ID=20A 0.6 mΩ nC 3.5 nC Gate Drain Charge 6.5 nC Turn-On DelayTime 6 ns 5 ns 29 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω 7 ns IF=20A, di/dt=500A/µs 19 Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs 60 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. I. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: January 2016 www.aosmd.com Page 2 of 6 AON6262E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 10V 100 4V VDS=5V 3.5V 80 80 4.5V 60 ID (A) ID (A) 60 3.0V 40 40 20 125°C 25°C 20 VGS=2.5V 0 0 0 1 2 3 4 1 5 3 4 5 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 8 2 Normalized On-Resistance VGS=4.5V RDS(ON) (mΩ) 2 6 4 VGS=10V 1.8 VGS=10V ID=20A 1.6 1.4 1.2 VGS=4.5V ID=20A 1 0.8 2 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 20 1.0E+01 ID=20A 1.0E+00 125°C 1.0E-01 IS (A) RDS(ON) (mΩ) 15 125°C 10 1.0E-02 25°C 1.0E-03 5 1.0E-04 25°C 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: January 2016 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6262E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2500 VDS=30V ID=20A 2000 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 1500 1000 Coss 500 0 0 5 10 15 20 25 30 Crss 0 35 0 Qg (nC) Figure 7: Gate-Charge Characteristics 20 30 40 50 60 VDS (Volts) Figure 8: Capacitance Characteristics 500 1000.0 TJ(Max)=150°C TC=25°C 10µs 100.0 400 10.0 100µs 1.0 1ms 10ms 0.0 0.01 0.1 300 200 DC TJ(Max)=150°C TC=25°C 0.1 Power (W) 10µs RDS(ON) limited ID (Amps) 10 100 1 VDS (Volts) 10 100 0 0.0001 VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.6°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: January 2016 www.aosmd.com Page 4 of 6 AON6262E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 50 Power Dissipation (W) 50 40 Current rating ID (A) 40 30 20 10 30 20 10 0 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PDM Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: January 2016 www.aosmd.com Page 5 of 6 AON6262E Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: January 2016 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6