Datasheet

AOT20C60/AOB20C60/AOTF20C60
600V,20A N-Channel MOSFET
General Description
Product Summary
• Trench Power AlphaMOS-II technology
• Low RDS(ON)
• Low Ciss and Crss
• High Current Capability
• RoHS and Halogen Free Compliant
VDS @ Tj,max
700V
IDM
145A
RDS(ON),max
< 0.25Ω
Applications
100% UIS Tested
100% Rg Tested
Qg,typ
52nC
Eoss @ 400V
8.5µJ
• General Lighting for LED and CCFL
• AC/DC Power supplies for Industrial, Consumer,
and Telecom
Top View
TO-220
TO-263
D2PAK
TO-220F
D
D
G
D
AOT20C60
S
G
AOTF20C60
D
G
S
S
G
AOB20C60
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOT20C60L
AOB20C60L
AOTF20C60
TO-220 Green
TO-263 Green
TO-220F Pb Free
Tube
Tape & Reel
Tube
1000
800
1000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT20C60/AOB20C60
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
TC=100°C
C
AOTF20C60
±30
ID
V
20
20*
11
11*
IDM
Units
V
A
145
Avalanche Current C,J
IAR
20
A
Repetitive avalanche energy C,J
EAR
200
mJ
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25°C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
EAS
1470
100
20
mJ
dv/dt
PD
50
3.7
0.4
TL
-55 to 150
W
W/°C
°C
300
°C
AOT20C60/AOB20C60
AOTF20C60
Units
65
65
°C/W
0.5
0.27
-2.5
°C/W
°C/W
RθCS
Maximum Case-to-sink A
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev.3.0 December 2013
463
TJ, TSTG
Symbol
RθJA
V/ns
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Page 1 of 6
AOT20C60/AOB20C60/AOTF20C60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
600
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=150°C
700
V
ID=250µA, VGS=0V
0.55
V/ oC
VDS=600V, VGS=0V
1
VDS=480V, TJ=125°C
10
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=10A
gFS
Forward Transconductance
VDS=40V, ID=10A
25
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
±100
3
µA
4
5
nΑ
V
0.21
0.25
Ω
1
V
S
IS
Maximum Body-Diode Continuous Current
20
A
ISM
Maximum Body-Diode Pulsed Current C
145
A
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
related H
VGS=0V, VDS=100V, f=1MHz
3440
pF
145
pF
98
pF
185
pF
VGS=0V, VDS=0 to 480V, f=1MHz
Crss
Effective output capacitance, time
related I
Reverse Transfer Capacitance
VGS=0V, VDS=100V, f=1MHz
5
pF
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
1
Ω
Co(tr)
SWITCHING PARAMETERS
Total Gate Charge
Qg
Qgs
Gate Source Charge
Qgd
52
VGS=10V, VDS=480V, ID=20A
74
nC
22
nC
Gate Drain Charge
14
nC
tD(on)
Turn-On DelayTime
74
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=300V, ID=20A,
RG=25Ω
76
ns
100
ns
45
ns
IF=20A,dI/dt=100A/µs,VDS=100V
665
Body Diode Reverse Recovery Charge IF=20A,dI/dt=100A/µs,VDS=100V
14
ns
µC
Body Diode Reverse Recovery Time
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=7A, VDD=150V, RG=25Ω, Starting TJ=25°C.
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. L=1.0mH, VDD=150V, RG=25Ω, Starting TJ=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.3.0 December 2013
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Page 2 of 6
AOT20C60/AOB20C60/AOTF20C60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
60
10V
VDS=40V
48
-55°C
100
8V
ID(A)
ID (A)
36
6.5V
10
125°C
24
6V
1
12
25°C
VGS=5.5V
0
0
5
10
15
20
25
0.1
30
2
VDS (Volts)
Fig 1: On-Region Characteristics
6
8
10
VGS(Volts)
Figure 2: Transfer Characteristics
0.5
Normalized On-Resistance
3
0.4
RDS(ON) (Ω)
4
VGS=10V
0.3
0.2
0.1
10
20
30
40
VGS=10V
ID=10A
2
1.5
1
0.5
0
-100
0.0
0
2.5
50
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1E+02
1.2
40
1E+00
IS (A)
BVDSS (Normalized)
1E+01
1.1
1
125°C
1E-01
25°C
1E-02
0.9
1E-03
0.8
-100
1E-04
-50
0
50
100
150
200
TJ (°C)
Figure 5:Break Down vs. Junction Temperature
Rev.3.0 December 2013
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOT20C60/AOB20C60/AOTF20C60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
Ciss
VDS=480V
ID=20A
1000
Capacitance (pF)
VGS (Volts)
12
9
6
Coss
100
10
Crss
3
1
0
0
20
40
60
80
0.1
100
20
25
16
20
12
10
100
1000
Eoss
8
15
10
5
4
0
0
0
100
200
300
400
500
0
600
25
50
75
100
125
150
TCASE (°C)
Figure 10: Current De-rating (Note B)
VDS (Volts)
Figure 9: Coss stored Energy
1000
1000
100
100
10µs
RDS(ON)
limited
100µs
10
1ms
DC
1
10ms
10µs
RDS(ON)
limited
100µs
10
ID (Amps)
ID (Amps)
1
VDS (Volts)
Figure 8: Capacitance Characteristics
Current rating ID(A)
Eoss(uJ)
Qg (nC)
Figure 7: Gate-Charge Characteristics
1ms
1
10ms
0.1s
DC
0.1
0.1
TJ(Max)=150°C
TC=25°C
0.01
1s
TJ(Max)=150°C
TC=25°C
0.01
1
10
100
1000
VDS (Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOT(B)20C60 (Note F)
Rev.3.0 December 2013
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1
10
100
1000
VDS (Volts)
Figure 12: Maximum Forward Biased Safe
Operating Area for AOTF20C60 (Note F)
Page 4 of 6
AOT20C60/AOB20C60/AOTF20C60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.27°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Single Pulse
0.01
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT(B)20C60 (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
0.1
PD
0.01
Ton
T
Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF20C60 (Note F)
Rev.3.0 December 2013
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Page 5 of 6
AOT20C60/AOB20C60/AOTF20C60
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.3.0 December 2013
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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Page 6 of 6