AOD9T40P

AOD9T40P
400V,6.6A N-Channel MOSFET
General Description
Product Summary
• Trench Power AlphaMOS-II technology
• Low RDS(ON)
• Low Ciss and Crss
• High Current Capability
• RoHS and Halogen Free Compliant
VDS @ Tj,max
500V
IDM
26A
RDS(ON),max
< 0.8Ω
Qg,typ
9nC
Eoss @ 320V
1.5µJ
Applications
100% UIS Tested
100% Rg Tested
• General Lighting for LED and CCFL
• AC/DC Power supplies for Industrial, Consumer, and
Telecom
TO-252
DPAK
Top View
D
Bottom View
D
D
G
S
G
G
S
S
AOD9T40P
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOD9T40P
TO-252
Tape & Reel
2500
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
TC=100°C
C
Avalanche Current C
Units
V
±30
V
6.6
ID
A
4.2
26
IDM
L=1mH
Maximum
400
IAR
9
A
Repetitive avalanche energy C
EAR
40
mJ
Single pulsed avalanche energy H
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25°C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
EAS
252
50
5
83
0.7
-55 to 150
mJ
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Symbol
RθJA
Maximum Case-to-sink A
RθCS
Maximum Junction-to-CaseD,F
RθJC
Rev.1.0: Auguest 2014
V/ns
Typical
Maximum
Units
40
50
°C/W
1.3
0.5
1.5
°C/W
°C/W
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Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
400
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=150°C
500
ID=250µA, VGS=0V
0.39
1
VDS=320V, TJ=125°C
10
Gate-Body leakage current
VDS=0V, VGS=±30V
VDS=5V, ID=250µA
VGS=10V, ID=4A
gFS
Forward Transconductance
VDS=40V, ID=4A
5.5
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.77
RDS(ON)
V/ oC
VDS=400V, VGS=0V
Gate Threshold Voltage
Static Drain-Source On-Resistance
IGSS
VGS(th)
V
µA
±100
3
nA
4
5
V
0.67
0.8
Ω
1
V
S
IS
Maximum Body-Diode Continuous Current
6.6
A
ISM
Maximum Body-Diode Pulsed Current C
26
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
related I
Crss
Effective output capacitance, time
related J
Reverse Transfer Capacitance
Rg
Gate resistance
Co(tr)
530
pF
30
pF
29
pF
51
pF
VGS=0V, VDS=100V, f=1MHz
2.8
pF
f=1MHz
2.3
Ω
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 320V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
9
VGS=10V, VDS=320V, ID=6.6A
18
nC
4
nC
Gate Drain Charge
1.8
nC
tD(on)
Turn-On DelayTime
21
ns
tr
Turn-On Rise Time
26
ns
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=200V, ID=6.6A,
RG=25Ω
26
ns
tf
trr
14
ns
Body Diode Reverse Recovery Time
IF=6.6A,dI/dt=100A/µs,VDS=100V
233
Qrr
Body Diode Reverse Recovery Charge IF=6.6A,dI/dt=100A/µs,VDS=100V
2.1
ns
µC
Turn-Off Fall Time
A. The value of R qJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedance from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=2.9A, VDD=150V, RG=10Ω, Starting TJ=25°C.
I. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: Auguest 2014
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
15
VDS=40V
10V
-55°C
12
ID(A)
ID (A)
10
7V
9
6.5V
6
125°C
1
6V
3
25°C
VGS=5.5V
0
0.1
0
5
10
15
20
25
30
2
4
3
2.5
2.5
Normalized On-Resistance
RDS(ON) (Ω)
3
2
VGS=10V
1.5
1
0.5
2
4
8
12
16
0
-100
20
1E+01
1.1
1E+00
IS (A)
BVDSS (Normalized)
1.2
0.8
1E-03
100
150
200
100
150
200
25°C
1E-04
TJ (°C)
Figure 5: Break Down vs. Junction Temperature
Rev.1.0: Auguest 2014
50
125°C
1E-02
50
0
1E-01
0.9
0
-50
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1E+02
1
VGS=10V
ID=4A
0.5
1.3
-50
10
1
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
0.7
-100
8
1.5
0
0
6
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Figure 1: On-Region Characteristics
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
VDS=320V
ID=6.6A
Ciss
1000
Capacitance (pF)
VGS (Volts)
12
9
6
100
Coss
10
3
Crss
1
0
0.1
0
3
6
9
12
15
0.1
Qg (nC)
Figure 7: Gate-Charge Characteristics
1
10
100
1000
VDS (Volts)
Figure 8: Capacitance Characteristics
100
3
2.5
2
100µs
ID (Amps)
Eoss(uJ)
10µs
RDS(ON)
limited
10
1.5
Eoss
1
1ms
DC
1
10ms
0.1
0.5
TJ(Max)=150°C
TC=25°C
0
0.01
0
100
200
300
400
500
1
100
1000
VDS(Volts)
Figure 10: Maximum Forward Biased Safe Operating
Area (Note F)
VDS (Volts)
Figure 9: Coss stored Energy
100
10
80
8
Current rating ID(A)
Power Dissipation (W)
10
60
40
6
4
2
20
0
0
0
25
50
75
100
125
150
25
50
75
100
125
150
TCASE (°C)
Figure 12: Current De-rating (Note F)
TCASE (°C)
Figure 11: Power De-rating (Note B)
Rev.1.0: Auguest 2014
0
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Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
500
1000
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TA=25°C
400
Power (W)
Power (W)
800
600
400
300
200
100
200
0
1E-05
0.0001
0.001
0.01
0.1
1
10
0
0.0001 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-toAmbient (Note G)
Pulse Width (s)
Figure 13: Single Pulse Power Rating Junction-toCase (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Single Pulse
0.01
Ton
T
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note F)
ZθJA Normalized Transient
Thermal Resistance
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
Rev.1.0: Auguest 2014
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: Auguest 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6