SAMWIN SW3710 N-channel MOSFET Features TO-220 BVDSS : 100V : 57A ID ■ High ruggedness ■ RDS(ON) (Max 0.023 Ω)@VGS=10V ■ Gate Charge (Typical 85nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested RDS(ON) : 0.023 ohm 1 2 2 3 1 1. Gate 2. Drain 3. Source General Description This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize RDS(ON), low gate charge and high rugged avalanche characteristics. 3 Order Codes Item 1 Sales Type SW P 3710 Marking SW3710 Package TO-220 Packaging TUBE Absolute maximum ratings Symbol VDSS ID Parameter Value Unit Drain to Source Voltage 100 V Continuous Drain Current (@TC=25oC) 57* A Continuous Drain Current (@TC=100oC) 40* A 235 A ±20 V IDM Drain current pulsed VGS Gate to Source Voltage EAS Single pulsed Avalanche Energy (note 2) 480 mJ EAR Repetitive Avalanche Energy (note 1) 35 mJ (note 3) 13 V/ns 195 W 1.56 W/oC -55 ~ + 150 oC 300 oC dv/dt PD TSTG, TJ TL (note 1) Peak diode Recovery dv/dt Total power dissipation (@TC Derating Factor above =25oC) 25oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter Value Unit Rthjc Thermal resistance, Junction to case 0.64 oC/W Rthcs Thermal resistance, Case to Sink 0.5 oC/W Rthja Thermal resistance, Junction to ambient 62.5 oC/W Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2012. Rev. 3.0 1/5 SAMWIN SW3710 Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit 100 - - V Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC - 0.093 - V/oC - 1 uA Drain to source leakage current VDS=100V, VGS=0V - IDSS - - 100 uA IGSS VDS=80V, TC =125oC Gate to source leakage current, forward VGS=20V, VDS=0V - - 100 nA Gate to source leakage current, reverse VGS=-20V, VDS=0V - - -100 nA On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA 2.0 - 4.0 V RDS(ON) Drain to source on state resistance VGS=10V, ID = 28.5A - 0.0145 0.023 Ω Forward Transconductance VDS = 40 V, ID = 28.5A 5 - - S - 3400 4250 - 1320 1650 Gfs Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 215 340 td(on) Turn on delay time - 42 100 - 120 250 - 204 450 - 123 260 - 85 140 - 16 - - 38 - Min. Typ. Max. Unit - - 57 A - - 235 A tr td(off) tf Qg Rising time Turn off delay time VGS=0V, VDS=25V, f=1MHz VDS=50V, ID=57A, RG=25Ω (note 4,5) Fall time Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDS=80V, VGS=10V, ID=57A (note 4,5) pF ns nC Source to drain diode ratings characteristics Symbol Parameter Test conditions IS Continuous source current ISM Pulsed source current Integral reverse p-n Junction diode in the MOSFET VSD Diode forward voltage drop. IS=57A, VGS=0V - - 1.5 V Trr Reverse recovery time - 45 - ns Qrr Breakdown voltage charge IS=57A, VGS=0V, dIF/dt=100A/us - 107 - nC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 300uH, IAS = 57A, VDD = 25V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 57A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2012. Rev. 3.0 2/5 SAMWIN SW3710 Fig. 1. On-state characteristics Fig. 2. On-resistance variation vs. drain current and gate voltage VGS=10V Notes: 1. 250μs Pulse Test 2. T=25 ℃ 3. VGS 2~10V Step=1V VGS=20V Fig. 3. Gate charge characteristics Fig. 4. On state current vs. diode forward voltage 12.0 Vgs, Gate Source Voltage(V) 10.0 8.0 VDS=80V 150℃ 6.0 25℃ 4.0 2.0 0.0 0.0 20.0 40.0 60.0 80.0 100.0 Qg, Total Gate Charge (nC) Fig 5. Breakdown Voltage Variation vs. Junction Temperature Fig. 6. On resistance variation vs. junction temperature 2.5 RDSON, (Normalized Drain-Source ON resistance BVDSS, (Normalized Drain-Source Breakdown Voltage 1.2 1.1 1 0.9 0.8 2 1.5 1 0.5 0 -70 -45 -20 5 30 55 80 105 130 155 180 TJ Junction Temperture （℃） -70 -45 -20 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 5 30 55 80 105 130 155 180 TJ Junction Temperture （℃） Oct. 2012. Rev. 3.0 3/5 SAMWIN SW3710 Fig. 7. Maximum safe operating area Fig. 8. Transient thermal response curve Fig. 9. Gate charge test circuit & waveform VGS Same type as DUT QG 10V VDS QGD QGS DUT VGS 4mA Charge nC Fig. 10. Switching time test circuit & waveform VDS RL RGS VDS VDD VIN 10VIN 90% DUT 10% 10% td(on) tr tON Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. tf td(off) tOFF Oct. 2012. Rev. 3.0 4/5 SAMWIN SW3710 Fig. 11. Unclamped Inductive switching test circuit & waveform Fig. 12. Peak diode recovery dv/dt test circuit & waveform DUT + VDS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG 10VGS Diode reverse current VDD Diode recovery dv/dt Same type as DUT VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. VF VDD Body diode forward voltage drop Oct. 2012. Rev. 3.0 5/5