SAMWIN SW8N60 N-channel MOSFET Features TO-220F TO-220 BVDSS : 600V ID ■ High ruggedness ■ RDS(ON) (Max 1.3 Ω)@VGS=10V ■ Gate Charge (Typ 38nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested : 7.5A RDS(ON) : 1.3ohm 1 2 1 3 2 2 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. 3 Order Codes Item 1 2 Sales Type SW P 8N60 SW F 8N60 Marking SW8N60 SW8N60 Package TO-220 TO-220F Packaging TUBE TUBE Absolute maximum ratings Symbol VDSS Continuous Drain Current IDM Drain current pulsed Gate to Source Voltage EAS Single pulsed Avalanche Energy EAR dv/dt TL TO-220F 600 (@TC=25oC) VGS TSTG, TJ TO-220 Drain to Source Voltage ID PD Value Parameter V 7.5 7.5* (note 1) Unit A 30 A ± 30 V (note 2) 230 mJ Repetitive Avalanche Energy (note 1) 14.7 mJ Peak diode Recovery dv/dt (note 3) 4.5 V/ns Total power dissipation (@TC=25oC) Derating Factor above 25oC 147 53* W 1.18 0.43 W/oC Operating Junction Temperature & Storage Temperature -55 ~ + 150 oC 300 oC Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter Value TO-220 TO-220F 0.85 2.35 Unit oC/W Rthjc Thermal resistance, Junction to case Rthcs Thermal resistance, Case to Sink 0.5 oC/W Rthja Thermal resistance, Junction to ambient 62.5 oC/W Jun. 2011. Rev. 2.0 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 1/7 SAMWIN SW8N60 Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit 600 - - V Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC - 0.68 - V/oC - 1 uA Drain to source leakage current VDS=600V, VGS=0V - IDSS VDS=480V, TC=125oC - - 20 uA Gate to source leakage current, forward VGS=30V, VDS=0V - - 100 nA Gate to source leakage current, reverse VGS=-30V, VDS=0V - - -100 nA 2.0 - 4.0 V 1.0 1.3 Ω 965 1255 105 135 12 16 16.5 45 60.5 130 81 170 64.5 140 28 36 4.5 - 12 - Min. Typ. Max. Unit - - 7.5 A - - 30 A IGSS On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA RDS(ON) Drain to source on state resistance VGS=10V, ID = 3.75A Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance td(on) Turn on delay time tr td(off) tf Rising time Turn off delay time VGS=0V, VDS=25V, f=1MHz VDS=300V, ID=7.5A, RG=25Ω Fall time Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDS=480V, VGS=10V, ID=7.5A pF ns nC Source to drain diode ratings characteristics Symbol Parameter Test conditions IS Continuous source current ISM Pulsed source current Integral reverse p-n Junction diode in the MOSFET VSD Diode forward voltage drop. IS=7.5A, VGS=0V - - 1.5 V Trr Reverse recovery time - 365 - ns Qrr Breakdown voltage temperature IS=7.5A, VGS=0V, dIF/dt=100A/us - 3.4 - uC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 20mH, IAS = 7.0A, VDD = 50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 7.0A, di/dt = 200A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2/7 SAMWIN SW8N60 Fig. 1. On-state characteristics Fig. 2. Transfer characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On state current vs. diode forward voltage Fig. 5. Capacitance characteristics (Non-Repetitive) Fig. 6. Gate charge characteristics Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 3/7 SAMWIN Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig. 9. Maximum drain current vs. case temperature. SW8N60 Fig. 8. On resistance variation vs. junction temperature Fig. 10. Maximum safe operating area Fig. 11. Transient thermal response curve Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 4/7 SAMWIN SW8N60 Fig. 12. Gate charge test circuit & waveform VGS Same type as DUT QG VDS QGD QGS DUT VGS 1mA Charge Fig. 13. Switching time test circuit & waveform VDS RL RG 90% VDS VDD VIN 10VIN DUT 10% 10% td(on) td(off) tr tON tf tOFF Fig. 14. Unclamped Inductive switching test circuit & waveform 1 EAS = L BVDSS IAS BVDSS - VDD IAS VDS RG 2 BVDSS L X IAS2 X VDD ID(t) 10VIN DUT VDS(t) tp time Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 5/7 SAMWIN SW8N60 Fig. 15. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG 10VGS Diode reverse current VDD Diode recovery dv/dt Same type as DUT VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VF VDD Body diode forward voltage drop Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 6/7 SAMWIN SW8N60 REVISION HISTORY Revision No. Changed Characteristics Responsible Date Issuer REV 1.0 Origination, First Release Alice Nie 2010.12.05 XZQ REV 2.0 Updated the format of datasheet and added Order Codes. Alice Nie 2011.06.02 XZQ WWW.SEMIPOWER.COM.CN 西安芯派电子科技有限公司 深圳市南方芯源科技有限公司 地址：西安市高新区高新一路25号创新大厦MF6 地址：深圳市福田区天安数码城时代大厦A座2005 电话：029 - 88253717 传真：029 - 88251977 电话：0755 - 83981818 传真：0755 - 83476838 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 7/7