AOS Semiconductor Product Reliability Report AOTF404/AOTF404L, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: (408) 830-9742 www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOTF404. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOTF404 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: The AOTF404/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification, load switching and general purpose applications. -RoHs Compliant -AOTF404L is Halogen free 2 II. Die / Package Information: Process Package Type Lead Frame Die Attach Bond wire Mold Material Flammability Rating Backside Metallization Moisture Level AOTF404 AOTF404L (Green Compound) Standard sub-micron Standard sub-micron Low voltage N channel process Low voltage N channel process 3 leads TO220FL 3 leads TO220FL Bare Cu Bare Cu Soft solder Soft solder Al 5&15 mils Al 5&15 mils Epoxy resin with silica filler Epoxy resin with silica filler UL-94 V-0 UL-94 V-0 Ti / Ni / Ag Ti / Ni / Ag Up to Level 1 * Up to Level 1* Note * based on info provided by assembler and mold compound supplier III. Result of Reliability Stress for AOTF404 (Standard) & AOTF404L (Green) Test Item Test Condition Time Point Lot Attribution Total Sample size Solder Reflow Precondition Standard: 1hr PCT+3 cycle reflow@260°°c Green: 168hr 85°c /85%RH +3 cycle reflow@260°c Temp = 150°°c , Vgs=100% of Vgsmax - Standard: 11 lots Green: 3 lots 2442pcs 0 231pcs 0 HTGB 168hrs 500 hrs 1000 hrs Number of Failures 3 lots 77pcs / lot (Note A*) HTRB Temp = 150°°c , Vds=80% of Vdsmax 168hrs 500 hrs 1000 hrs 231pcs 0 3 lots 77 pcs / lot HAST 130 +/- 2°°c , 85%RH, 33.3 psi, Vgs = 80% of Vgs max 100 hrs (Note A*) Standard : 5 lots Green: 3 lots Pressure Pot 121°°c , 29.7psi, 100%RH 96 hrs Temperature Cycle -65°°c to 150°°c , air to air, 250 / 500 cycles 440pcs 0r (Note B**) Standard :11 lots Green: 3 lots 55 pcs / lot 1078pcs 0 (Note B**) Standard : 9 lots Green: 3 lots 77 pcs / lot 924pcs 0 (Note B**) 77 pcs / lot 3 III. Result of Reliability Stress for AOTF404 (Standard) & AOTF404L (Green) Continues DPA Internal Vision Cross-section X-ray CSAM NA 5 5 5 5 5 5 0 NA 5 5 0 Bond Integrity Room Temp 150°°c bake 150°°c bake 0hr 250hr 500hr 40 40 40 40 wires 40 wires 40 wires 0 Solderability 245°°c 5 sec 15 15 leads 0 Note A: The HTGB and HTRB reliability data presents total of available AOTF404 and AOTF404L burn-in data up to the published date. Note B: The pressure pot, temperature cycle, HAST and HTS reliability data for AOTF404 and AOTF404L comes from the AOS generic package qualification data. IV. Reliability Evaluation FIT rate (per billion): 8 MTTF = 14871 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AOTF404). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 10 9 8 MTTF = 10 / FIT =1.30 x10 hrs = 14871 years / [2x6x77x1000x258] = 8 Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10 -5eV / K 4