Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT2274
NPN SILICON TRANSISTOR
SWITCHING REGULATOR
APPLICATIONS

FEATURES
* High breakdown voltage (VCBO≥1400V).
* Ultra high-speed switching.
* Wide SOA.

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
UT2274L-T92-B
UT2274G-T92-B
TO-92
UT2274L-T92-K
UT2274G-T92-K
TO-92
UT2274L-TM3-T
UT2274G-TM3-T
TO-251
UT2274L-T60-K
UT2274G-T60-K
TO-126
Note: Pin assignment: E: Emitter
B: Base
C: Collector
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1
B
B
B
B
Pin Assignment
2
3
C
E
C
E
C
E
C
E
Packing
Tape Box
Bulk
Tube
Bulk
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
NPN SILICON TRANSISTOR
MARKING
PACKAGE
MARKING
TO-251
TO-126
TO-92
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA= 25°C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
RATINGS
UNIT
1400
V
720
V
5
V
DC
1
A
Collector Current
Pulse (Note 2)
2
A
TO-251
1
W
Collector Dissipation
TO-92
PC
625
mW
TO-126
875
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. PW≤300μs, duty cycle≤10%

SYMBOL
VCBO
VCEO
VEBO
IC
ICP
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Storage Time
Fall Time
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
ICES
IEBO
VCE(SAT)
VBE(SAT)
hFE1
hFE2
tSTG
tF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
IC=1 mA, IE =0A
IC=5 mA, RBE =∞
IE =1 mA, IC =0A
VCB=800 V, IE =0A
VCE=1400 V, RBE =0Ω
VEB=4V, IC =0A
IC=0.25 A, IB=0.05 A
IC=0.5 A, IB=0.1 A
VCE =5V, IC=0.1 A
VCE =5V, IC=0.5 A
VCC=200V, RL=400Ω
IC=0.5A,IB1=0.1A,IB2=-0.25A,
MIN TYP MAX UNIT
1400
V
720
V
5
V
10
μA
1
mA
1
mA
1.5
V
1.5
V
15
35
4
1.5
3.0
μs
0.25 0.4
μs
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NPN SILICON TRANSISTOR
SWITCHING TIME TEST CIRCUIT
IB1
PW =20μs
D.C. ≤1%
Output
IB2
Input
RB
VR
RL
50Ω
+
100μF
VBE=-5V
+
470μF
VCC=200V
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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