SAMWIN SW730 N-channel MOSFET Features BVDSS : 400V TO-220 : 6.5A ID ■ High ruggedness ■ RDS(ON) (Max 1.0Ω)@VGS=10V ■ Gate Charge (Typical 33nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested RDS(ON) : 1.0ohm 1 2 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. Order Codes Item 1 Sales Type SW P 730 Marking SW730 Package TO-220 Packaging TUBE Absolute maximum ratings Symbol VDSS ID Parameter Drain to Source Voltage Value Unit 400 V Continuous Drain Current (@TC =25oC) 6.5* A Continuous Drain Current (@TC =100oC) 3.8* A 26 A ±30 V IDM Drain current pulsed VGS Gate to Source Voltage EAS Single pulsed Avalanche Energy (note 2) 265 mJ EAR Repetitive Avalanche Energy (note 1) 20 mJ (note 3) 4.5 V/ns 192 W 1.54 W/oC -55 ~ + 150 oC 300 oC dv/dt PD TSTG, TJ TL (note 1) Peak diode Recovery dv/dt Total power dissipation (@TC Derating Factor above =25oC) 25oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter Value Unit Rthjc Thermal resistance, Junction to case 0.65 oC/W Rthcs Thermal resistance, Case to Sink 0.5 oC/W Rthja Thermal resistance, Junction to ambient 65 oC/W Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2012. Rev. 3.0 1/5 SAMWIN SW730 Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit 400 - - V Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC - 0.48 - V/oC - 1 uA Drain to source leakage current VDS=400V, VGS=0V - IDSS VDS=320V, TC=125oC - - 20 uA Gate to source leakage current, forward VGS=30V, VDS=0V - - 100 nA Gate to source leakage current, reverse VGS=-30V, VDS=0V - - -100 nA IGSS On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA 2.0 - 4.0 V RDS(ON) Drain to source on state resistance VGS=10V, ID = 3.25A - 0.8 1.0 Ω Forward Transconductance VDS = 40 V, ID = 3.25A 3 - - S - 570 750 - 160 215 Gfs Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 30 40 td(on) Turn on delay time - 12 40 - 33 100 - 102 200 - 38 50 - 33 50 - 4 - - 17 - Min. Typ. Max. Unit - - 6.5 A - - 26 A tr td(off) tf Qg Rising time Turn off delay time VGS=0V, VDS=25V, f=1MHz VDS=200V, ID=6.5A, RG=25Ω (note 4,5) Fall time Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDS=320V, VGS=10V, ID=6.5A (note 4,5) pF ns nC Source to drain diode ratings characteristics Symbol Parameter Test conditions IS Continuous source current ISM Pulsed source current Integral reverse p-n Junction diode in the MOSFET VSD Diode forward voltage drop. IS=6.5A, VGS=0V - - 1.5 V Trr Reverse recovery time - 225 - ns Qrr Breakdown voltage charge IS=6.5A, VGS=0V, dIF/dt=100A/us - 1.94 - uC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 12.5mH, IAS = 6.5A, VDD = 50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 6.5A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2012. Rev. 3.0 2/5 SAMWIN SW730 Fig. 2. On-resistance variation vs. drain current and gate voltage Fig. 1. On-state characteristics VGS=20V Notes: 1. 250μs Pulse Test 2. T=25 ℃ 3. VGS 2~10V Step=1V VGS=10V Fig. 3. Gate charge characteristics Fig. 4. On state current vs. diode forward voltage Vgs, Gate Source Voltage(V) 12.0 10.0 8.0 VDS=320V 150℃ 25℃ 6.0 4.0 2.0 0.0 10.0 20.0 30.0 Qg, Total Gate Charge (nC) 40.0 Fig 5. Breakdown Voltage Variation vs. Junction Temperature Fig. 6. On resistance variation vs. junction temperature 1.2 3 2.5 1.1 RDSON, (Normalized Drain-Source ON resistance BVDSS, (Normalized Drain-Source Breakdown Voltage 0.0 1 0.9 0.8 2 1.5 1 0.5 0 -70 -45 -20 5 30 55 80 105 130 155 180 -70 -45 -20 TJ Junction Temperture （℃） Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 5 30 55 80 105 130 155 180 TJ Junction Temperture （℃） Oct. 2012. Rev. 3.0 3/5 SAMWIN SW730 Fig. 7. Maximum safe operating area Fig. 8. Transient thermal response curve Fig. 9. Gate charge test circuit & waveform VGS Same type as DUT QG 10V VDS QGD QGS DUT VGS 1.5mA Charge nC Fig. 10. Switching time test circuit & waveform VDS RL RGS VDS VDD VIN 10VIN 90% DUT 10% 10% td(on) tr tON Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. tf td(off) tOFF Oct. 2012. Rev. 3.0 4/5 SAMWIN SW730 Fig. 11. Unclamped Inductive switching test circuit & waveform Fig. 12. Peak diode recovery dv/dt test circuit & waveform DUT + VDS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG 10VGS Diode reverse current VDD Diode recovery dv/dt Same type as DUT VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. VF VDD Body diode forward voltage drop Oct. 2012. Rev. 3.0 5/5