SEMIPOWER SWD50N06A

SAMWIN
SW50N06A
N-channel MOSFET
Features
TO-251
TO-252
BVDSS : 60V
ID
■ High ruggedness
■ RDS(ON) (Max 0.023 Ω)@VGS=10V
■ Gate Charge (Typ 30nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
: 50A
RDS(ON) : 0.023 ohm
1
2
1 2
3
3
2
1. Gate 2. Drain 3. Source
1
General Description
3
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant
topology like a electronic ballast, and also low power switching mode power appliances.
Order Codes
Item
1
2
Sales Type
SW I 50N06A
SW D 50N06A
Marking
SW50N06A
SW50N06A
Package
TO-251
TO-252
Packaging
TUBE
REEL
Absolute maximum ratings
Symbol
VDSS
ID
Parameter
Drain to Source Voltage
Continuous Drain Current
(@TC=25oC)
Continuous Drain Current (@TC=100oC)
IDM
Drain current pulsed
(note 1)
VGS
Gate to Source Voltage
Value
Unit
60
V
50
A
34
A
200
A
± 20
V
EAS
Single pulsed Avalanche Energy
(note 2)
780
mJ
EAR
Repetitive Avalanche Energy
(note 1)
13
mJ
dv/dt
Peak diode Recovery dv/dt
(note 3)
7
V/ns
108
W
0.86
W/oC
-55 ~ + 150
oC
300
oC
PD
TSTG, TJ
TL
Total power dissipation (@TC
Derating Factor above
=25oC)
25oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Rthjc
Thermal resistance, Junction to case
Rthcs
Thermal resistance, Case to sink
Rthja
Thermal resistance, Junction to ambient
Mar. 2011. Rev. 2.0
Value
Min.
Typ.
Max.
Unit
1.15
oC/W
50
oC/W
62.5
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oC/W
1/7
SAMWIN
SW50N06A
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
60
-
-
V
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS
/ ΔTJ
Breakdown voltage temperature
coefficient
ID=250uA, referenced to 25oC
-
0.06
-
V/oC
-
1
uA
Drain to source leakage current
VDS=60V, VGS=0V
-
IDSS
VDS=48V, TC=125oC
-
-
100
uA
Gate to source leakage current, forward
VGS=20V, VDS=0V
-
-
100
nA
Gate to source leakage current, reverse
VGS=-20V, VDS=0V
-
-
-100
nA
2.0
-
4.0
V
0.016
0.023
Ω
900
1220
430
550
90
IGSS
On characteristics
VGS(TH)
Gate threshold voltage
VDS=VGS, ID=250uA
RDS(ON)
Drain to source on state resistance
VGS=10V, ID = 25A
Dynamic characteristics
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
80
td(on)
Turn on delay time
50
tr
td(off)
tf
Rising time
Turn off delay time
VGS=0V, VDS=25V, f=1MHz
165
VDS=30V, ID=25A, RG=25Ω
pF
ns
78
Fall time
60
Qg
Total gate charge
36
45
Qgs
Gate-source charge
8.6
-
Qgd
Gate-drain charge
12
-
Min.
Typ.
Max.
Unit
-
-
50
A
-
-
200
A
VDS=48V, VGS=10V, ID=50A
nC
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
IS
Continuous source current
ISM
Pulsed source current
Integral reverse p-n Junction
diode in the MOSFET
VSD
Diode forward voltage drop.
IS=50A, VGS=0V
-
-
1.5
V
Trr
Reverse recovery time
-
95
-
ns
Qrr
Breakdown voltage temperature
IS=50A, VGS=0V,
dIF/dt=100A/us
-
250
-
uC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 300uH, IAS = 50.0A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 50.0A, di/dt = 300A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.
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SAMWIN
SW50N06A
Fig. 1. On-state characteristics
Fig. 2. Transfer characteristics
3
10
2
10
8
7
6
5.5
5
Bottom 4.5
2
10
10
Id[ A ], Drain Current
ID[ A ], Drain Current
VGS[ V ] Top 15
1
10
،‫ ط‬Note
1. 250§‫ ء‬Pulse Test
2. TC = 25،‫ة‬
-55[،‫]ة‬
1
10
،‫ ط‬Note
VDS = 30 [ V ]
250§‫ ء‬Pulse Test
0
10
25[،‫]ة‬
125[،‫]ة‬
0
-1
0
10
10
1
10
2
10
4
VDS[V], Drain to Source Voltage
6
8
10
Vgs[ v ], Gate-Source Voltage
Fig. 3. On-resistance variation vs.
drain current and gate voltage
Fig. 4. On state current vs.
diode forward voltage
70
2
10
IDR[ A ], Reverse Drain Current
Drain to Source on Resistance
60
RDS(ON)[m§‫]ظ‬
50
40
VGS=10[V]
30
20
1
10
VGS=20[V]
،‫ ط‬Note
TJ = 25،‫ة‬
10
o
Tj=25 C
،‫ ط‬Note
VGS = 0V
250§‫ ء‬Pulse Test
0
0
10
0
50
100
150
0.2
200
0.4
0.6
ID[ A ], Drain Current
2. COss = Cds + Cgd
،‫ ط‬Note
1. VGS = 0[V]
Ciss
2. Frequency = 1[MHz]
1500
Crss
500
0
-1
10
VGS[ V ], Gate to Source Voltage[V]
Coss
3. Crss = Cgd
1000
1.2
1.4
1.6
12
1. Ciss = Cgs + Cgd (Cds = shorted)
2000
1.0
Fig. 6. Gate charge characteristics
3000
2500
0.8
Vsd[ V ], Source-Drain Voltage
Fig. 5. Capacitance characteristics
(Non-Repetitive)
Capcitance [ pF ]
o
Tj=175 C
10
VDS =12V
VDS = 30V
8
VDS = 48V
6
4
،‫ ط‬Note
ID = 50A
2
0
0
10
1
10
VDS[ V ], Drain to Source Voltage
0
5
10
15
20
25
30
35
40
45
Gate Charge [nC]
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SAMWIN
SW50N06A
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 8. On resistance variation
vs. junction temperature
3.0
1.1
1.0
0.9
2.5
Rds(on),(Normalized)
Drain-Source On-Resistance
BVDSS[ V ], Breakdown Voltage
1.2
،‫ ط‬Note
1. VGS= 0V
2.0
1.5
1.0
،‫ ط‬Note
1. Vgs = 10V
2. Id = 25A
0.5
2. ID = 250§‫ث‬
0.8
-100
-50
0
50
100
150
0.0
-100
200
-50
0
50
100
150
200
o
Tj, Junction temperature[ C]
Temperature [،‫]ة‬
Fig. 9. Maximum drain current vs.
case temperature.
Fig. 10. Maximum safe operating area
Operating Area limited
by RDS(ON)
2
ID[ A ], Drain Current
10
1ms
100us
10ms
DC
1
10
Case Temp. @ 175،‫ة‬
Junction [email protected] 25،‫ة‬
Single Pulse
،‫ ط‬See Figure 11.
0
10
-1
0
10
1
10
2
10
10
VDS[ V ], Drain to source Voltage
Z¥‫ب‬JC(t), Thermal Impedance
Fig. 11. Transient thermal response curve
0
10
PDM
t1
t2
-1
10
<Note>
1. Z¥‫ب‬JC(t) = 1.25،‫ة‬/W Max.
2. Duty Factor, D=t1/t2
3. Z¥‫ب‬JC(t) = (TJM - TC)/PD
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
t1[ sec ], Square Wave Pulse Duration
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SAMWIN
SW50N06A
Fig. 12. Gate charge test circuit & waveform
VGS
Same type
as DUT
QG
VDS
QGD
QGS
DUT
VGS
1mA
Charge
Fig. 13. Switching time test circuit & waveform
VDS
RL
RG
90%
VDS
VDD
VIN
10VIN
DUT
10%
10%
td(on)
td(off)
tr
tON
tf
tOFF
Fig. 14. Unclamped Inductive switching test circuit & waveform
1
EAS =
L
BVDSS
IAS
BVDSS - VDD
IAS
VDS
RG
2
BVDSS
L X IAS2 X
VDD
ID(t)
10VIN
DUT
VDS(t)
tp
time
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SAMWIN
SW50N06A
Fig. 15. Peak diode recovery dv/dt test circuit & waveform
DUT
+ V
DS
10V
VGS (DRIVER)
L
IS
di/dt
IS (DUT)
IRM
VDS
RG
10VGS
Diode reverse current
VDD
Diode recovery dv/dt
Same type
as DUT
VDS (DUT)
*. dv/dt controlled by RG
*. Is controlled by pulse period
VF
VDD
Body diode forward voltage drop
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SAMWIN
SW50N06A
REVISION HISTORY
Revision No.
Changed Characteristics
Responsible
Date
Issuer
REV 1.0
Origination, First Release
Alice Nie
2007.12.05
XZQ
REV 2.0
Updated the format of datasheet and added
Order Codes.
Alice Nie
2011.03.24
XZQ
WWW.SEMIPOWER.COM.CN
西安芯派电子科技有限公司
深圳市南方芯源科技有限公司
地址:西安市高新区高新一路25号创新大厦MF6
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电话:029 - 88253717 传真:029 - 88251977
电话:0755 - 83981818 传真:0755 - 83476838
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