2670

NTE2670 (NPN) & NTE2671 (PNP)
Silicon Complementary Transistors
Silicon Perforated Emitter Technology
Audio Power Output
TO3PBL Type Package
Description:
The NTE2670 and NTE2671 are silicon complementary transistors in a TO3PBL type package that
utilize Perforated Emitter technology specifically designed for high power audio output, disk head positioners and linear applications.
Features:
D High DC Current Gain − hFE = 25 Min @ IC = 8A
D Excellent Gain Linearity
Absolute Maximum Ratings:
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V
Collector−Emitter Voltage (1.5V), VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Base Current−Continuous, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7°C/W
Note 1. Pulse Test: Pulse Width = 5.0 μs, Duty Cycle ≤10%.
Note 2. Matched complementary pairs are available upon request (NTE2671MCP). Matched complementary pairs have their gain specification (hFE) matched to within 10% of each other.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
250
−
−
V
OFF Characteristics
Collector Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus) IC = 100mA, IB = 0
ICEO
VCE = 200V, IB = 0
−
−
100
μA
ICEX
VCE = 250V, VBE(off) = 1.5V
−
−
100
μA
IEBO
VCE = 5V, IC = 0
−
−
100
μA
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VCE = 50V, t = 1s (non−repetitive)
4.0
−
−
A
VCE = 80V, t = 1s (non−repetitive)
2.25
−
−
A
IC = 8A, VCE = 5V
25
−
75
IC = 16A, VCE = 5V
8
−
−
Second Breakdown
Second Breakdown Collector Current
with Base Forward Biased
IS/b
ON Characteristics
DC Current Gain
hFE
Base−Emitter Voltage
VBE(on)
IC = 8A, VCE = 5V
−
−
2.2
V
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 8A, IB = 800mA
−
−
1.4
V
IC = 16A, IB = 3.2A
−
−
4.0
V
VRMS = 28.3V, f = 1kHz, PLOAD = 100WRMS
−
0.8
−
%
Matched pair hFE = 50 @ 5A/5V
−
0.08
−
%
IC = 1A, VCE = 1−V, ftest = 1MHz
4
−
−
MHz
VCB = 10V, IE = 0, ftest = 1MHz
−
−
500
pF
Dynamic Characteristics
Total Harmonic Distortion at the Output
(hFE unmatched)
THD
(hFE matched)
Current Gain Bandwidth Product
fT
Collector Output Capacitance
Cob
.204 (5.2)
.810(20.57)
Max
.236
(6.0)
1.030
(26.16)
.137 (3.5)
Dia Max
.098
(2.5)
.215 (5.45)
.787
(20.0)
.040 (1.0)
B
C
.023 (0.6)
E
Note: Collector connected to heat sink.