2598

NTE2598
Silicon NPN Transistor
High Voltage, High Current Switch
TO3PBL Type Package
Features:
D High Breakdown Voltage, Reliability
D fast Switching Speed
D Wide ASO
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A
Base Current. IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Note 1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 10%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Collector Cutoff Current
ICBO
VCB = 800V, IE = 0
−
−
10
μA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
−
−
10
μA
DC Current Gain
hFE
VCE = 5V, IC = 1.6A
15
−
40
VCE = 5V, IC = 8A
8
−
−
fT
VCE = 10V, IC = 1.6A
−
15
−
MHz
Cob
VCB = 10V, f = 1MHz
−
470
−
pF
Gain−Bandwidth Product
Output Capacitance
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 12A, IB = 2.4A
−
−
2.0
V
Base−Emitter Saturation Voltage
VBE(sat)
IC = 12A, IB = 2.4A
−
−
1.5
V
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Collector−Base Breakdown Voltage
V(BR)CBO IC = 1mA, IE = 0
1100
−
−
V
Collector−Emitter Breakdown Voltage
V(BR)CEO IC = 10A, RBE = ∞
800
−
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 1mA, IC = 0
7
−
−
V
Collector−Emitter Sustaining Voltage
VCEO(sus) IC = 12A, IB1 = −IB2 = 2.4A,
l = 50μH, Clamped
800
−
−
V
−
−
0.5
μs
−
−
3.0
μs
−
−
0.3
μs
Turn−On Time
ton
Storage Time
tstg
Fall Time
VCC = 400V,
5IB1 = −2.5IB2 = IC = 20A,
RL = 20Ω
tf
.810(20.57)
Max
.204 (5.2)
.236
(6.0)
1.030
(26.16)
.137 (3.5)
Dia Max
.098
(2.5)
.215 (5.45)
.787
(20.0)
.040 (1.0)
B
C
E
Note: Collector connected to heat sink.
.023
(0.6)