2661

NTE2661
Silicon NPN Transistor
Horizontal Deflection Output for HDTV
TO3PBL Type Package
Features:
D High Speed: tf = 0.15μs Typ
D High Breakdown Voltage: VCBO = 1700V
D Low Saturation Voltage: VCE(sat) = 3V Max
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−to−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V
Collector−to−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Emitter−to−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 1700V, IE = 0
−
−
1.0
mA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
−
−
10
μA
600
−
−
V
VCE = 5V, IC = 2A
10
−
30
−
VCE = 5V, IC = 11A
4.5
−
8.5
Collector−Emitter Breakdown Voltage
DC Current Gain
V(BR)CEO IC = 10mA, IB = 0
hFE
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 11A, IB = 2.75A
−
−
3
V
Base−Emitter Saturation Voltage
VBE(sat)
IC = 11A, IB = 2.75A
−
1.0
1.3
V
fT
VCE = 10V, IE = 0.1A
−
1.7
−
MHz
Transition Frequency
Collector Output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
−
290
−
pF
Storage Time
tstg
IC(peak) = 10A, IB1 = 1.8A,
fH = 64kHz
−
2.5
4.0
μs
−
0.15
0.3
μs
Fall Time
tf
.810 (20.57) Max
.204 (5.2)
.236
(6.0)
1.030
(26.16)
.137 (3.5)
Dia Max
.098
(2.5)
.215 (5.45)
.787
(20.0)
.040 (1.0)
B
C
.023 (0.6)
E
NOTE: Pin2 connected to heatsink