175

NTE38 (PNP) & NTE175 (NPN)
Silicon Complementary Transistors
High Voltage, Medium Power Switch
TO66 Type Package
Description:
The NTE38 (PNP) and NTE175 (NPN) are complementary silicon transistors in a TO66 type package
designed for high−speed switching and linear amplifier applications for high−voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers.
Features:
D TO66 Type Package
D Collector−Emitter Sustaining Voltage:
NTE38: VCEO(sus) = 350V @ IC = 200mA
NTE175: VCEO(sus) = 300V @ IC = 200mA
D Second Breakdown Collector Current:
NTE38 IS/b = 875mA @ VCE = 40V
NTE175 IS/b = 350mA @ VCE = 100V
D Usable DC Current Gain to 2.0Adc
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO
NTE38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V
NTE175 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector−Base Voltage, VCB
NTE38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE175 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6Vdc
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C
Storage Junction Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C
Thermal Resistance, Junction to Case, RΘJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5°C/W
Note 1. Pulse Test (NTE175 Only): Pulse Width = 5ms, Duty Cycle ≤ 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
350
−
−
V
300
−
−
V
400
−
−
V
375
−
−
V
OFF Characteristics (Note 2)
Collector−Emitter Sustaining Voltage
VCEO(sus) IC = 200mA, IB = 0
NTE38
NTE175
Collector−Emitter Sustaining Voltage
VCEX(sus) IC = 200mA, VBE = −1.5V, L = 10mH
NTE38 Only
VCER(sus) IC = 200mA, IB = 0, RBE = 50Ω
Emitter−Base Breakdown Voltage
NTE38 Only
VEBO
IE = 0.5mA, IC = 0
6
−
−
V
Collector Cutoff Current
ICEO
VCE = 150V, IB = 0
−
−
5
mA
Collector Cutoff Current
NTE38
ICEV
VCE = 250V, VBE(off) = 1.5V
−
−
0.5
mA
VCE = 250V, VBE(off) = 1.5V, TC = +100°C
−
−
5.0
mA
VCE = 315V, VBE(off) = 1.5V
−
−
0.5
mA
VCE = 315V, VBE(off) = 1.5V, TC = +100°C
−
−
5.0
mA
VCE = 360V, VBE(off) = 1.5V
−
−
0.5
mA
VCE = 360V, VBE(off) = 1.5V, TC = +100°C
−
−
5.0
mA
VCE = 450V, VBE(off) = 1.5V
−
−
1.0
mA
VCE = 300V, VBE(off) = 1.5V, TC = +150°C
−
−
3.0
mA
IEBO
VEB = 6V, IC = 0
−
−
0.5
mA
hFE
IC = 1A, VCE = 4V
10
−
100
IC = 0.1A, VCE = 10V
40
−
−
IC = 1A, VCE = 2V
8
−
80
IC = 1A, VCE = 10V
25
−
100
IC = 1A, IB = 125mA
−
−
2.0
V
−
−
0.75
V
IC = 1A, IB = 125mA
−
−
1.4
IC = 1A, IB = 100mA
−
−
1.4
V
IC = 1A, VCE = 10V
−
−
1.4
V
IC = 200mA, VCE = 10V, ftest = 5MHz,
Note 3
20
−
−
MHz
15
−
−
MHz
VCB = 10V, IE = 0, f = 1MHz
−
−
120
pF
NTE175
Emitter Cutoff Current
ICEX
ON Characteristics (Note 2)
DC Current Gain
NTE38
NTE175
Collector−Emitter Saturation Voltage
NTE38
VCE(sat)
NTE175
Base−Emitter Saturation Voltage
NTE38
VBE(sat)
NTE175
Base−Emitter ON Voltage
NTE175 Only
VBE(on)
V
Dynamic Characteristics
Current Gain −Bandwidth Product
NTE38
fT
NTE175
Output Capacitance (NTE175 Only)
Cob
Note 2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
Note 3. fT = |hfe| ftest
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
t = 1s (Non−Repetitive), VCE = 40V
875
−
−
mA
VCE = 100V
350
−
−
mA
−
−
0.6
μs
−
−
2.5
μs
−
−
0.6
μs
IB1 = 100mA, RL = 200Ω
−
−
3.0
μs
IB1 = IB2 = 100mA
−
−
4.0
μs
−
−
3.0
μs
Second Breakdown
Second Breakdown Collector Current
NTE38
IS/b
NTE175
Switching Characteristics
NTE38
Rise Time
tr
Storage Time
ts
Fall Time
tf
NTE175
Rise Time
tr
Storage Time
ts
Fall Time
tf
VCC = 200V, IC = 1A
IB1 = IB2 = 125mA
VCC = 200V,
IC = 1A
.295 (7.5)
.485 (12.3)
Dia
.062 (1.57)
.031 (0.78) Dia
.960 (24.3)
.360
(9.14)
Min
Base
.580 (14.7)
.147 (3.75) Dia
(2 Places)
.200
(5.08)
.145 (3.7) R Max
Collector/Case
Emitter