2678

NTE2678
Silicon NPN Transistor
Power, High Voltage w/Built−In Damper Diode
TO3P(H)IS Type Package
Features:
D Built−In Damper Diode
D High Voltage, High Speed
Applications:
D Color TV Horizontal Output
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Base Voltage (Open Emitter), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V
Collector−Emitter Voltage (Open Base), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Emitter−Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Emitter−Base Breakdown Voltage
Symbol
Test Conditions
V(BR)EBO IE = 200mA, IC = 0
Min
Typ
Max
Unit
5
−
−
V
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 5A, IB = 1A
−
−
5.0
V
Base−Emitter Saturation Voltage
VBE(sat)
IC = 5A, IB = 1A
−
−
1.5
V
Collector Cutoff Current
ICBO
VCB = 500V, IE = 0
−
−
10
μA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
66
−
200
mA
DC Current Gain
hFE
IC = 1A, VCE = 5V
8
−
28
IC = 100mA, VCE = 10V
1
3
−
MHz
IE = 0, VCB = 10V, f = 1MHz
−
250
−
pF
Transition Frequency
Collector Output Capacitance
fT
COB
Diode Forward Voltage
VF
IF = 5A
−
−
2.0
V
Storage Time
ts
−
−
6.0
μs
Fall Time
tf
Resistive Load, ICP = 5A, IB1 = 1A,
IB2 = −2A, RL = 40Ω
−
−
0.4
μs
.217 (5.5)
.610 (15.5)
.130 (3.3)
.177
(4.5)
.378
(9.6)
.965
(24.5)
.177
(4.5)
.720
(18.3)
Min
B
.215 (5.47)
C
E
.138 (3.5)