2681

NTE2681
Silicon NPN Transistor
High Speed Switch w/Internal Damper Diode
TO3PMLH Type Package
Features:
D High Switching Speed
D High Breakdown Voltage: VCBO = 1600V
D High Reliability
D Built−in Damper Diode
Applications:
D Horizontal Deflection Output for Ultrahigh−Definition CRT Displays
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1600V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Symbol
Test Conditions
Min
Typ
Max
Unit
ICBO
VCB = 800V, IE = 0
−
−
10
μA
ICES
VCE = 1600V, RBE = 0
−
−
1.0
mA
Emitter Cutoff Current
IEBO
VEB = 4V, IC = 0
40
−
200
mA
DC Current Gain
hFE
VCE = 5V
IC = 1A
8
−
−
IC = 11A
4
−
−
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 10A, IB = 2.5A
−
−
3.0
V
Base−Emitter Saturation Voltage
VBE(sat)
IC = 10A, IB = 2.5A
−
−
1.5
V
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Diode Forward Voltage
VF
IEC = 12A
−
−
2.2
V
Storage Time
tstg
IC = 7A, IB1 = 900mA,
IB2 = −3.5A
−
−
3.0
μs
−
−
0.2
μs
Fall Time
tf
.220 (5.6)
.630 (16.0)
.122 (3.1)
.197
(5.0)
.315
(8.0)
.866
(22.0)
.827
(21.0)
B
C
E
.157
(4.0)
.083 (2.1)
.803
(20.4)
.215 (5.45)