2679

NTE2679
Silicon NPN Transistor
Power, High Voltage w/Built−In Damper Diode
TO−220Full Pack
Features:
D High Breakdown Voltage: VCBO = 1500V Min
D Wide Area of Safe Operation
D Built−In Damper Diode
Applications:
D Horizontal Deflection Output for TV or CRT Monitor
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Collector Power Dissipation, PC
TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Emitter−Base Breakdown Voltage
Symbol
Test Conditions
V(BR)EBO IE = 500mA, IC = 0
Min
Typ
Max
Unit
5
−
−
V
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 3A, IB = 750mA
−
−
2.5
V
Base−Emitter Saturation Voltage
VBE(sat)
IC = 3A, IB = 750mA
−
−
1.5
V
ICBO
VCB = 1000V, IE = 0
−
−
50
A
VCB = 1500V, IE = 0
−
−
1.0
mA
IC = 3A, VCE = 5V
5
−
12
IF = 3A
−
−
2.0
V
Collector Cutoff Current
DC Current Gain
Collector−Emitter Diode Forward Voltage
hFE
VECF
Current Gain Bandwidth Product
fT
IC = 100mA, VCE = 10V, f =
0.5MHz
−
3
−
MHz
Storage Time
tstg
Resistive Load
IC = 3A, IB1 = 750mA, IB2 = −1.5A
−
−
5.0
s
−
−
0.5
s
Fall Time
tf
Rev. 6−15
.177 (4.5)
.394 (10.0)
.108 (2.75)
.169
(4.3)
.335
(8.5)
.590
(15.0)
B
C
E
.150
(3.8)
.532
(13.5)
Min
.100 (2.54)
.090 (2.3)