NTE2679 Silicon NPN Transistor Power, High Voltage w/Built−In Damper Diode TO−220Full Pack Features: D High Breakdown Voltage: VCBO = 1500V Min D Wide Area of Safe Operation D Built−In Damper Diode Applications: D Horizontal Deflection Output for TV or CRT Monitor Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Collector Power Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Emitter−Base Breakdown Voltage Symbol Test Conditions V(BR)EBO IE = 500mA, IC = 0 Min Typ Max Unit 5 − − V Collector−Emitter Saturation Voltage VCE(sat) IC = 3A, IB = 750mA − − 2.5 V Base−Emitter Saturation Voltage VBE(sat) IC = 3A, IB = 750mA − − 1.5 V ICBO VCB = 1000V, IE = 0 − − 50 A VCB = 1500V, IE = 0 − − 1.0 mA IC = 3A, VCE = 5V 5 − 12 IF = 3A − − 2.0 V Collector Cutoff Current DC Current Gain Collector−Emitter Diode Forward Voltage hFE VECF Current Gain Bandwidth Product fT IC = 100mA, VCE = 10V, f = 0.5MHz − 3 − MHz Storage Time tstg Resistive Load IC = 3A, IB1 = 750mA, IB2 = −1.5A − − 5.0 s − − 0.5 s Fall Time tf Rev. 6−15 .177 (4.5) .394 (10.0) .108 (2.75) .169 (4.3) .335 (8.5) .590 (15.0) B C E .150 (3.8) .532 (13.5) Min .100 (2.54) .090 (2.3)