NTE2680 Silicon NPN Transistor Power, High Speed Switch w/Internal Damper Diode TO3P(H)IS Type Package Features: D Collector−Emitter Sustaining Voltage: VCEO(SUS) = 800V Min. D High Switching Speed D Built−in Damper Diode Applications: D Horizontal Deflection Output for Color TV Receiver Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Emitter Voltage (VBE = 0), VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 800 − − V Collector−Emitter Sustaining Voltage VCEO(SUS) IC = 100mA, IB = 0, L = 25mH Emitter−Base Breakdown Voltage V(BR)EBO IE = 300mA, IC = 0 8 − − V Collector−Emitter Saturation Voltage VCE(sat) IC = 5A, IB = 1.25A − − 3.0 V Base−Emitter Saturation Voltage VBE(sat) IC = 5A, IB = 1.25A − − 1.03 V VCE = 1500V, VBE = 0 − − 1.0 mA − − 2.0 mA Collector Cutoff Current ICES TC = +125°C Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol DC Current Gain Test Conditions hFE Diode Forward Voltage tstg Fall Time Typ Max IC = 500mA 7.0 − − IC = 5A 4.2 − − IF = 5A − − 2.2 V IC = 5A, IB1 = 1A, IB2 = −2.5A − − 3.75 μs − − 0.4 μs VCE = 5V VECF Storage Time Min tf .217 (5.5) .610 (15.5) .130 (3.3) .177 (4.5) .378 (9.6) .965 (24.5) B E C .177 (4.5) .720 (18.3) Min .215 (5.47) .138 (3.5) Unit