2680

NTE2680
Silicon NPN Transistor
Power, High Speed Switch w/Internal Damper Diode
TO3P(H)IS Type Package
Features:
D Collector−Emitter Sustaining Voltage: VCEO(SUS) = 800V Min.
D High Switching Speed
D Built−in Damper Diode
Applications:
D Horizontal Deflection Output for Color TV Receiver
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Emitter Voltage (VBE = 0), VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
800
−
−
V
Collector−Emitter Sustaining Voltage
VCEO(SUS) IC = 100mA, IB = 0, L = 25mH
Emitter−Base Breakdown Voltage
V(BR)EBO
IE = 300mA, IC = 0
8
−
−
V
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 5A, IB = 1.25A
−
−
3.0
V
Base−Emitter Saturation Voltage
VBE(sat)
IC = 5A, IB = 1.25A
−
−
1.03
V
VCE = 1500V,
VBE = 0
−
−
1.0
mA
−
−
2.0
mA
Collector Cutoff Current
ICES
TC = +125°C
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
DC Current Gain
Test Conditions
hFE
Diode Forward Voltage
tstg
Fall Time
Typ
Max
IC = 500mA
7.0
−
−
IC = 5A
4.2
−
−
IF = 5A
−
−
2.2
V
IC = 5A, IB1 = 1A, IB2 = −2.5A
−
−
3.75
μs
−
−
0.4
μs
VCE = 5V
VECF
Storage Time
Min
tf
.217 (5.5)
.610 (15.5)
.130 (3.3)
.177
(4.5)
.378
(9.6)
.965
(24.5)
B
E
C
.177
(4.5)
.720
(18.3)
Min
.215 (5.47)
.138 (3.5)
Unit