NTE2676 Silicon NPN Transistor High Voltage, High Speed Switch TO3P(H)IS Type Package Features: D High Breakdown Voltage: VCBO = 1500V Min D High Switching Speed D Low Saturation Voltage Applications: D Color TV Horizontal Deflection Output Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector−Emitter Saturation Voltage VCE(sat) IC = 6A, IB = 1.5A − − 3.0 V Base−Emitter Saturation Voltage VBE(sat) IC = 6A, IB = 1.5A − − 1.4 V Collector Cutoff Current ICBO VCB = 1500V, IE = 0 − − 1.0 mA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 − − 10 μA DC Current Gain hFE IC = 1A, VCE = 5V 10 − 30 IC = 6A, VCE = 5V 4 − 8 IC = 100mA, VCE = 10V − 1.7 − MHz Current Gain Bandwidth Product fT Output Capacitance COB IE = 0, VCB = 10V, ftest = 1.0MHz − 135 − pF Storage Time tstg ICP = 6A, IB1(end) = 1.5A, fH = 15.75kHz − − 11 μs − − 0.7 μs Fall Time tf .217 (5.5) .610 (15.5) .130 (3.3) .177 (4.5) .378 (9.6) .965 (24.5) .177 (4.5) .720 (18.3) Min B .215 (5.47) C E .138 (3.5)