NTE2642 Silicon NPN Transistor Horizontal Deflection Output High Speed Switch Features: D High Breakdown Voltage D High Reliability D High Speed Switching D Wide Area of Safe Operation (ASO) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Collector Power Dissipation, PC TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector Cutoff Current Symbol ICBO Test Conditions Min Typ Max Unit VCB = 1000V, IE = 0 – – 50 µA VCB = 1700V, IE = 0 – – 1 mA µA Emitter Cutoff Current IEBO VEB = 7V, IC = 0 – – 50 DC Current Gain hFE VCE = 5V, IC = 8A 6 – 12 Collector–Emitter Saturation Voltage VCE(sat) IC = 8A, IB = 2A – – 3 V Base–Emitter Saturation Voltage VBE(sat) IC = 8A, IB = 2A – – 1.5 V VCE = 10V, IC = 0.1A, f = 0.5MHz – 3 – MHz Transition Frequency fT Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit – – 3.0 µs – – 0.2 µs Switching Time Storage Time Fall Time tstg IC = 8A, Resistance loaded, IB1 = 2A, IB2 = –4A tf .222 (5.65) Max .638 (16.2) Max .140 (3.55) .199 (5.05) .354 (9.0) Isol .835 (21.2) Max .817 (20.75) Max B 1.673 (42.5) Max .091 (2.3) Max .433 (11.0) C E