NTE NTE2642

NTE2642
Silicon NPN Transistor
Horizontal Deflection Output
High Speed Switch
Features:
D High Breakdown Voltage
D High Reliability
D High Speed Switching
D Wide Area of Safe Operation (ASO)
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Collector Power Dissipation, PC
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Symbol
ICBO
Test Conditions
Min
Typ
Max
Unit
VCB = 1000V, IE = 0
–
–
50
µA
VCB = 1700V, IE = 0
–
–
1
mA
µA
Emitter Cutoff Current
IEBO
VEB = 7V, IC = 0
–
–
50
DC Current Gain
hFE
VCE = 5V, IC = 8A
6
–
12
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 8A, IB = 2A
–
–
3
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 8A, IB = 2A
–
–
1.5
V
VCE = 10V, IC = 0.1A, f = 0.5MHz
–
3
–
MHz
Transition Frequency
fT
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
–
–
3.0
µs
–
–
0.2
µs
Switching Time
Storage Time
Fall Time
tstg
IC = 8A, Resistance loaded,
IB1 = 2A, IB2 = –4A
tf
.222 (5.65) Max
.638 (16.2) Max
.140 (3.55)
.199
(5.05)
.354
(9.0)
Isol
.835
(21.2)
Max
.817
(20.75)
Max
B
1.673
(42.5)
Max
.091
(2.3)
Max
.433 (11.0)
C
E