WFF9N90 Product Description Silicon N-Channel MOSFET Features D � 9A,900V,RDS(on)(Max1.35Ω)@VGS=10V � Ultra-low Gate charge(Typical 43nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) G S General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction. Absolute Maximum Ratings Symbol VDSS Parameter Value Units 900 V Continuous Drain Current(@Tc=25℃) 9* A Continuous Drain Current(@Tc=100℃) 6.0* A 36* A ±30 V Drain Source Voltage ID IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note2) 858 mJ EAR Repetitive Avalanche Energy (Note1) 27.7 mJ dv/dt Peak Diode Recovery dv /dt (Note3) 4.1 V/ ns 68 W 0.54 W/℃ -55~150 ℃ 300 ℃ Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ,Tstg TL Junction and Storage Temperature Channel Temperature Thermal Characteristics Value Symbol Parameter Min Typ Max Units RQJC Thermal Resistance , Junction -to -Case - - 1.84 ℃/W RQJA Thermal Resistance , Junction-to -Ambient - - 62.5 ℃/W WT-F024--Rev.A1 Nov.2014 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 1010 WFF9N90 Product Description Silicon N-Channel MOSFET Electrical Characteristics(Tc=25℃) Characteristics Symbol Gate leakage current Gate-source breakdown voltage Test Condition Min Type Max Unit IGSS VGS=±30V,VDS=0V - - ±100 nA V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V IDSS VDS=900V,VGS=0V,TC=25℃ - - 1 µA IDSS VDS=720V,VGS=0V,TC=125℃ - - 10 µA Drain cut -off current V(BR)DSS ID=250uA,VGS=0V 900 - - V Gate threshold voltage VGS(th) VDS=10V,ID=1mA 3 - 4.5 V Drain -source ON resistance RDS(ON) VGS=10V,ID=4.5A - 1.1 1.35 Ω Forward Transconductance gfs VDS=15V,ID=4.5A - 9.5 - S Input capacitance Ciss VDS=25V, - 2150 2830 Reverse transfer capacitance Crss VGS=0V, - 13 17 - 189 246 - 116 235 - 53 121 - 69 171 - 97 199 - 43 56 - 15 - - 21 - Min Type Drain -source breakdown voltage Coss Output capacitance tr Rise time ton Turn-on time Switching time tf Fall time pF f=1MHz VDD=400V, ID=9A ns RG=100Ω (Note4,5) toff Turn-off time VDD=400V, Total gate charge(gate-source Qg VGS=10V, plus gate-drain) Gate-source charge Qgs Gate-drain("miller") Charge Qgd ID=9A nC (Note4,5) Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Max Unit Continuous drain reverse current IDR - - - 9 A Pulse drain reverse current IDRP - - - 36 A Forward voltage(diode) VDSF IDR=9A,VGS=0V - - 1.4 V Reverse recovery time trr IDR=9A,VGS=0V, - 539 - ns Reverse recovery charge Qrr dIDR / dt =100 A / µs - 641 - µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=20mH IAS=9A,VDD=50V,RG=25Ω,Starting TJ=25℃ 3.ISD≤9A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution WINSEMI MICROELECTRONICS www.winsemi.com WINSEMI MICROELECTRONICS Tel : +86-755-8250 6288 WINSEMI MICROELECTRONICS Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 2/8 WFF9N90 Product Description Silicon N-Channel MOSFET To p VG S 15V 10V 9V 8V 7V 6 .5 V 6V 5 .5 V 5V 10 ID [A ] I D [A] 10 1 5 0 °C 2 5 °C 1 1 Notes: 1.250µs pulse test 2.Tc = 25°C No te s: 1 .2 5 0 µs p u lse te st 2 .VD S =4 0 V 0 .1 1 10 2 10 VG S [V] VD S [V] Fig.2 Transfer Characteristics Fig.1 On Region Characteristics 10 1 .6 V GS =1 0V 1 .4 I DR[ A] RDS(ON)[Ω] 8 6 4 V G S =20V 1 5 0 °C 2 5 °C 1 1 .2 Notes: 1.250µs pulse test 2.VG S =0V Note:TJ =25°C 1 .0 2 0 4 8 6 10 12 0 .1 0 .2 0. 3 0 . 4 0 . 5 0 . 6 0 . 7 0 . 8 0 . 9 1 . 0 14 1 .1 1 .2 1 .3 1 .4 1 .5 ID [A] VS D [V] Fig.3 On-Resistance Variation vs Drain Current and Gate Voltage Fig.4 Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 3X 10 Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd 3 720V 10 450V 180V 2X 10 V GS (V) pF 8 3 C is s 6 C o ss 1X 10 4 3 Note: 1.VG S =0V 2.f=1MHz 2 Note:I D=9.0A C rs s 0 -1 10 10 0 10 0 1 10 0 VD S [V] WINSEMI MICROELECTRONICS WINSEMI 40 Qg(nC) Fig.6 Gate Charge Characteristics Fig.5 Capacitance Characteristics www.winsemi.com 30 20 MICROELECTRONICS Tel : +86-755-8250 6288 WINSEMI MICROELECTRONICS Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 3/8 WFF9N90 Product Description Silicon N-Channel MOSFET 1 .2 4 .0 3 .5 3 .0 R DS( ON) BVDSS 1 .1 1 .0 2 .5 2 .0 1 .5 0 .9 1 .0 Note: 1.VG S =0V 2.ID =250uA 0 .8 -7 5 -5 0 -2 5 0 25 75 50 100 Note: 1.VG S =0V 2.ID =4.5A 0 .5 0 .0 -7 5 150 125 -5 0 -2 5 0 25 75 50 T J (° C ) 100 125 150 T J (° C ) Fig.7 Breakdown Voltage Variation vs. Temperature Fig.8On-Resistance Variation vs. Temperature 10 10 O p e ra ti o n i n T h i s A re a i s L i m i te d b y RDS(ON) 2 10 100µs 1 1m s I D [A] I D [A] 8 6 10ms 10 4 100ms 0 DC 2 No te s: 10 1 . Tc=2 5 °C 2 . TJ=150°C 3.Single pulse -1 10 0 10 1 10 2 10 0 3 25 50 V D S [V] Zθ JC (t ),Thermal Response 125 150 Tc(° C ) Fig.10 Maximum Drain Current vs Case temperature Fig.9 Maximum Safe Operation Area 1 100 75 D = 0 .5 0 .2 0 .1 0 .1 * N o t e: 1.ZθJ C (t)=1.84°C/W Max. 2.Duty Factor,D=t1/t2 3.TJM -TC =PDM * Zθ J C (t) 0 .0 5 0 .0 2 0 .0 1 Single pulse PD M 0 .0 1 t1 t2 1E -5 1E -4 1E -3 0 .0 1 0 .1 1 10 t1 Square Wave Pulse Duration[sec] Fig.11 Transient thermal Response Curve WINSEMI MICROELECTRONICS www.winsemi.com WINSEMI MICROELECTRONICS Tel : +86-755-8250 6288 WINSEMI MICROELECTRONICS Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 4/8 WFF9N90 Product Description Silicon N-Channel MOSFET 50K Ω 12V VG S Same type as D U T Qg 200nF 10V 300nF VD S VG S Qg s Qg d DUT 3m A Ch a rg e Fig.12 Gate Test circuit & Waveform VD S RG RL VD S 90% VD D VG S VG S DUT 10V 10% td(on) tr td(off) to n tf to f f Fig.13 Resistive Switching Test Circuit & Waveform L EA S = VD S B V DSS B V D S S - VD D B V DSS IA S ID RG VD D DUT 10V 1 L IA S 2 2 I D( t) VD S( t ) VD D tp tp Tim e Fig.14 Unclamped Inductive Switching Test Circuit & Waveform WINSEMI MICROELECTRONICS www.winsemi.com WINSEMI MICROELECTRONICS Tel : +86-755-8250 6288 WINSEMI MICROELECTRONICS Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 5/8 WFF9N90 Product Description Silicon N-Channel MOSFET DUT VD S IS D L Driver RG S am e Type as DUT VG S VD D dv/dt controlled by RG IS D conteolled by pulse period VG S D = (Driver) Gate Pulse Width Gate Pulse Period 10V IF M ,Body Diode Forward Current IS D di/dt (DUT) IR M Body Diode Reverse Current VD S (DUT) Body Diode Recovery dv/dt VD D VS D Body Diode Forward Voltage Drop Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform WINSEMI MICROELECTRONICS www.winsemi.com WINSEMI MICROELECTRONICS Tel : +86-755-8250 6288 WINSEMI MICROELECTRONICS Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 6/8 WFF9N90 Product Description Silicon N-Channel MOSFET TO-220F Package Dimension U n it:m m E 符 号 Symbol M IN MAX A 4 .5 4 .9 B - 1 .4 7 b 0 .7 0 .9 c 0 .4 5 0 .6 D 1 5 .6 7 1 6 .0 7 E 9 .9 6 1 0 .3 6 Q F L2 D P e L B b C 2.54TYPE F 2 .3 4 2 .7 4 L 1 2 .5 8 1 3 .3 8 L2 3 .1 3 3 .3 3 ФP 3 .0 8 3 .2 8 Q 3 .2 3 .4 Q1 2 .5 6 2 .9 6 Q1 e A e WINSEMI MICROELECTRONICS www.winsemi.com WINSEMI MICROELECTRONICS Tel : +86-755-8250 6288 WINSEMI MICROELECTRONICS Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 7/8 WFF9N90 Product Description Silicon N-Channel MOSFET NOTE: 1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 2.Please do not exceed the absolute maximum ratings of the device when circuit designing. 3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is subject to change without prior notice. CONTACT: Winsemi Microelectronics Co., Ltd. ADD:Room 1002, East, Phase 2, HighTech Plaza,Tian-An Cyber Park,Che gong miao, FuTian, Shenzhen, P.R. China. Post Code : 518040 Tel : +86-755-8250 6288 FAX : +86-755-8250 6299 Web Site : www.winsemi.com WINSEMI MICROELECTRONICS www.winsemi.com WINSEMI MICROELECTRONICS Tel : +86-755-8250 6288 WINSEMI MICROELECTRONICS Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 8/8