WFF8N65L Product Description
Silicon N-Channel MOSFET
Features
D
�
8.0A,650V,RDS(on)(Max1.4Ω)@VGS=10V
�
Ultra-low Gate charge(Typical 14.5nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(150℃)
G
S
General Description
This Power
MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology.this latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic lamp ballast, high efficiency switched mode power
supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
650
V
Continuous Drain Current(@Tc=25℃)
8
A
Continuous Drain Current(@Tc=100℃)
5.1
A
32
A
±30
V
398
mJ
48
W
0.38
W/℃
-55~150
℃
300
℃
Drain Source Voltage
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
Thermal Characteristics
Value
Symbol
Parameter
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
2.6
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
120
℃/W
WT-F085-Rev.A0 Oct. 2014
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WFF8N65L Product Description
Silicon N-Channel MOSFET
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Drain Cut -off current
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=650V,VGS=0V
-
-
1.0
µA
VDS=500V,Tc=125℃
-
-
100
µA
IDSS
V(BR)DSS
ID=250 µA,VGS=0V
650
-
-
V
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=4.0A
-
1.2
1.4
Ω
Drain -source breakdown voltage
Input capacitance
Ciss
VDS=25V,
-
902
-
Reverse transfer capacitance
Crss
VGS=0V,
-
3.2
-
Output capacitance
Coss
-
99
-
VDD=325V,
-
51.5
-
ID=8.0A
-
28.5
-
-
29.0
-
-
39.0
-
-
14.5
-
-
5.0
-
-
4.7
-
Turn-on Rise time
tr
Turn-on delay time
Td(on)
f=1MHz
Switching time
(Note3,4)
Td(off)
Turn-off delay time
ns
RG=25Ω
tf
Turn-off Fall time
pF
VDD=520V,
Total gate charge(gate-source
Qg
VGS=10V,
plus gate-drain)
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
nC
ID=8.0A
(Note3,4)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
8.0
A
Pulse drain reverse current
IDRP
-
-
-
32.0
A
Forward voltage(diode)
VDSF
IDR=8.0A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=8.0A,VGS=0V,
-
536.5
-
ns
Reverse recovery charge
Qrr
dIDR /dt =100 A /µs
-
3.66
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=30mH IAS=4.8A,VDD=120V,RG=25Ω,Starting TJ=25℃
3.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
4. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
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WFF8N65L Product Description
Silicon N-Channel MOSFET
100
100
VG S
To p
10
4 .5 V
5 .0 V
5 .5 V
6 .0 V
7 .0 V
8 .0 V
10
ID [A ]
I D[A ]
10V
15V
2 5 °C
1 5 0 °C
1
No te s:
1 .2 5 0 µs p u lse te st
2 .VD S =5 0 V
0 .1
0 .1
1
-5 5 °C
1
Notes:
1.250µ s pulse test
2.Tc = 25° C
0 .1
100
10
0
2
1
3
4
6
5
VD S [V]
7
8
9
10
VG S [V]
Fig.1 On Region Characteristics
Fig.2 Transfer Characteristics
1 .6
100
V GS =10V
1 .4
10
V G S =20V
I DR[A]
R DS(ON)[Ω]
1 .5
1 .3
1 .2
1 5 0 °C
-5 5 ° C
1
2 5 °C
1 .1
Notes:
1.250µs pulse test
2.VG S =0V
Note:TJ =25°C
1 .0
0
2
6
4
0 .1
10
8
0
0 .2
0 .4
ID [A]
0 .6
0 .8
1 .0
1 .2
1 .4
VS D [V]
Fig.3 On-Resistance Variation vs Drain
Current and Gate Voltage
Fig.4 Body Diode Forward Voltage Variation vs.
Source Current and Temperature
12
2000
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
C rss=C gd
1800
1600
520V
10
C o ss
320V
130V
1400
V GS (V)
pF
8
1200
C is s
1000
6
800
4
600
Note:
1.VG S =0V
2.f=1MHz
400
C rs s
2
200
0
0 .1
100
10
1
0
4
0
VD S [V]
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16
Qg(nC)
Fig.6 Gate Charge Characteristics
Fig.5 Capacitance Characteristics
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WFF8N65L Product Description
Silicon N-Channel MOSFET
1 .2
3 .0
2 .5
R DS( ON)
BVDSS
1 .1
1 .0
2 .0
1 .5
1 .0
0 .9
Note:
1.VG S =0V
2.ID =250uA
0 .8
-1 0 0
Note:
1.VG S =10V
2.ID =4.0A
0 .5
0 .0
-5 0
0
50
150
100
200
-1 0 0
-5 0
50
0
T J (° C )
2
8
7
100µs
6
1m s
I D [A]
ID [A]
10m s
10
D C
0
O p e ra ti o n i n T h i s A re a
i s L i m i te d b y RDS(ON)
10
200
Fig.8 On-Resistance Variation
vs. Temperature
1
10
150
T J (° C )
Fig.7 Breakdown Voltage Variation
vs. Temperature
10
100
5
4
3
-1
2
No te s:
10
1 . Tc=2 5 °C
2 . TJ=150°C
3.Single pulse
-2
10
0
10
1
1
10
2
10
0
3
25
50
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Fig.10 Maximum Drain Current
vs Case temperature
Fig.9 Maximum Safe Operation Area
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125
Tc(° C )
VD S [V]
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75
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WFF8N65L Product Description
Silicon N-Channel MOSFET
50K Ω
12V
VG S
Same type
as D U T
Qg
200nF
10V
300nF
VD S
VG S
Qg s
Qg d
DUT
3m A
Ch a rg e
Fig.11 Gate Test circuit & Waveform
VD S
RG
RL
VD S
90%
VD D
VG S
VG S
DUT
10V
10%
td(on)
tr
td(off)
to n
tf
to f f
Fig.12 Resistive Switching Test Circuit & Waveform
L
EA S =
VD S
B V DSS
B V D S S - VD D
B V DSS
IA S
ID
RG
VD D
DUT
10V
1
L IA S 2
2
I D( t)
VD S( t )
VD D
tp
tp
Tim e
Fig.13 Unclamped Inductive Switching Test Circuit & Waveform
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WFF8N65L Product Description
Silicon N-Channel MOSFET
DUT
VD S
IS D
L
Driver
RG
S am e Type
as DUT
VG S
VD D
dv/dt controlled by RG
IS D conteolled by pulse period
VG S
D =
(Driver)
Gate Pulse Width
Gate Pulse Period
10V
IF M ,Body Diode Forward Current
IS D
di/dt
(DUT)
IR M
Body Diode Reverse Current
VD S
(DUT)
Body Diode Recovery dv/dt
VD D
VS D
Body Diode
Forward Voltage Drop
Fig.14 Peak Diode Recovery dv/dt Test Circuit & Waveform
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WFF8N65L Product Description
Silicon N-Channel MOSFET
TO-220F Package Dimension
U n it:m m
E
符 号
Symbol
M IN
MAX
A
4 .5
4 .9
B
-
1 .4 7
b
0 .7
0 .9
c
0 .4 5
0 .6
D
1 5 .6 7
1 6 .0 7
E
9 .9 6
1 0 .3 6
Q
F
L2
D
P
2.54TYP.
e
L
B
b
C
F
2 .3 4
2 .7 4
L
1 2 .5 8
1 3 .3 8
L2
3 .1 3
3 .3 3
ФP
3 .0 8
3 .2 8
Q
3 .2
3 .4
Q1
2 .5 6
2 .9 6
Q1
e
A
e
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WFF8N65L Product Description
Silicon N-Channel MOSFET
NOTE:
1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any
question, please don't be hesitate to contact us.
2.Please do not exceed the absolute maximum ratings of the device when circuit designing.
3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is
subject to change without prior notice.
CONTACT:
Winsemi Microelectronics Co., Ltd.
ADD:Room 1002, East, Phase 2, HighTech Plaza,Tian-An Cyber Park,Che gong miao, FuTian, Shenzhen, P.R.
China.
Post Code : 518040
Tel : +86-755-8250 6288
FAX : +86-755-8250 6299
Web Site : www.winsemi.com
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