3088

NTE3088
Optoisolator
Silicon NPN High Voltage
Phototransistor Output
Description:
The NTE3088 is a gallium arsenide LED optically coupled to a high voltge, silicon phototransistor in
a 6–Lead DIP type package designed for applications requiring high voltage output. This device is
particularly useful in copy machines and solid state relays.
Features:
D High Voltage: 300V
D High Isolation Voltage: VISO = 7500V (Peak)
Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified)
Input LED
Continuous Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Peak Forward Current (Pulse Width = 1µs, 330pps), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2A
LED Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.41mW/°C
Output Transistor
Collector–Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter–Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Detector Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.76mW/°C
Total Device
Isolation Surge Voltage (Peak AC Voltage, 60Hz, 1sec Duration, Note 1), VISO . . . . . . . . . . . 7500V
Total Device Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.94mW/°C
Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering for 10sec), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C
Note 1. Isolation surge voltage is an internal device dielectric breakdown rating.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Input LED
Reverse Leakage Current
IR
VR = 6V
–
–
10
µA
Forward Voltage
VF
IF = 10mA
–
1.2
1.5
V
Capacitance
C
VR = 0, f = 1MHz
–
18
–
pF
VCE = 200V, RBE = 1MΩ
–
–
100
nA
VCE = 200V, RBE = 1MΩ, TA = +100°C
–
–
250
µA
Photodarlington (IF = 0 unless otherwise specified)
Collector–Emitter Dark Current
ICER
Collector–Base Breakdown Voltage
V(BR)CBO IC = 100µA
–
–
300
V
Collector–Emitter Breakdown Voltage
V(BR)CER IC = 1mA, RBE = 1MΩ
–
–
300
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 100µA
5
–
–
V
20
–
–
%
7500
–
–
V
Coupled
Current Transfer Ratio
CTR
VCE = 10V, IF = 10mA, RBE = 1MΩ
Isolation Surge Voltage
VISO
60Hz Peak AC, 1sec, Note 2
Isolation Resistance
RISO
V = 500V, Note 2
–
1011
–
Ω
IC = 0.5mA, IF = 10mA, RBE = 1MΩ
–
–
0.4
V
V = 0, f = 1MHz, Note 2
–
0.2
–
pF
VCC = 10V, IF = 5mA, RL = 100Ω
–
5
–
µs
–
5
–
µs
Collector–Emitter Saturation Voltage
Isolation Capacitance
VCE(sat)
CISO
Switching
Turn–On Time
ton
Turn–Off Time
toff
Note 2. For this test LED Pin1 and Pin2 are common and phototransistor Pin4, Pin5, and Pin6 are
common.
6
1
5
4
2
3
.260
(6.6)
Max
Pin Connection Diagram
Anode
1
6 Base
Cathode
2
5 Collector
N.C.
3
4 Emitter
.070 (1.78) Max
.350 (8.89)
Max
.200 (5.08)
Max
.085 (2.16) Max
.300 (7.62)
.350
(8.89)
Max
.100 (2.54)