NTE NTE3089

NTE3089
Optoisolator
AC Input, Silicon NPN
Phototransistor Output
Description:
The NTE3089 consists of two gallium arsenide LEDs connected in inverse parallel and coupled with
a silicon phototransistor in a 6–Lead DIP type package.
Features:
D AC or Polarity Insensitive Inputs
D Fast Switching Speeds
D Built–In Reverse Polarity Input Protection
D High Isolation Voltage
D High Isolation Resistance
D I/O Compatible with Integrated Circuits
Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified)
Infrared Emitting Diode (LED)
Continuous Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Peak Forward Current (Pulse Width = 1µs, 330pps), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1A
Power Dissipation (TA = +25°C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33mW/°C
Phototransistor
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/°C
Power Dissipation (TA = +25°C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.7mW/°C
Total Device
Steady–State Isolation Voltage (Input–to–Output)
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
RMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1060V
Surge Isolation Voltage (Input–to–Output)
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2500V
RMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1770V
Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering for 10sec), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +250°C
Note 1. TC indicates Collector lead temperature 1/32” from case.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Infrared Emitting Diode (LED)
Forward Voltage
VF
IF = ±10mA
–
–
1.5
V
Capacitance
CJ
VR = 0, f = 1MHz
–
–
100
pF
Phototransistor
Collector–Base Breakdown Voltage
V(BR)CBO IC = 100µA, IF = 0
70
–
–
V
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 10mA, IF = 0
30
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 100µA, IF = 0
5
–
–
V
Collector Dark Current
ICEO
VCE = 10V, IF = 0
–
–
100
nA
CTR
VCE = 10V, IF = ±10mA
20
–
–
%
VCE(sat)
IC = 0.5mA, IF = ±10mA
–
–
0.4
V
100
–
–
GΩ
Coupled
DC Current Transfer Ratio
Collector–Emitter Saturation Voltage
Isolation Resistance
R(I–O)
V(I–O) = 500V, Note 2
Note 2. Tests of Input–to–Output isolation current resistance, and capacitance are performed with the
input terminals (diode) shorted together and the output terminals (transistors) shorted together.
Pin Connection Diagram
LED 1 Anode/
LED 2 Cathode
1
6 Base
LED 1 Cathode/
LED 2 Anode
2
5 Collector
N.C.
3
4 Emitter
6
1
5
4
2
3
.260
(6.6)
Max
.070 (1.78) Max
.350 (8.89)
Max
.200 (5.08)
Max
.085 (2.16) Max
.300 (7.62)
.350
(8.89)
Max
.100 (2.54)