NTE3040 Optoisolator NPN Transistor Output Description: The NTE3040 is a gallium arsenide, infrared emitting diode in a 6−Lead DIP type package coupled with a silicon phototransistor. Applications: D Power Supply Regulators D Digital Logic Inputs D Microprocessor Inputs Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified) Infrared Emitting Diode Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Derate above 25°C ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/°C Forward Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak (Pulse Width 1μsec, 300pps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Phototransistor Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Derate above 25°C ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/°C Collector−to−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector−to−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Emitter−to−Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Total Device Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW Derate above 25°C ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/°C Storage Temperature, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C Operating Temperature, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +100°C Lead Soldering Temperature (10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C Electrical Characteristics: (TA = +25°C, Note 1, unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Infrared Emitting Diode Input Forward Voltage VF IF = 10mA − 1.18 1.50 V Reverse Leakage Current IR VR = 6V − 0.001 10 μA Note 1. Typical values at TA = +25°C. Electrical Characteristics (Cont’d): (TA = +25°C, Note 1, unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Phototransistor Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1.0mA, IF = 0 30 100 − V Collector−Base Breakdown Voltage V(BR)CBO IC = 100μA, IF = 0 70 120 − V Emitter−Collector Breakdown Voltage V(BR)ECO IE = 100μA, IF = 0 7 10 − V Collector−Emitter Dark Current ICEO VCE = 10V, IF = 0 − 1 50 nA Collector−Base Dark Current ICBO VCEB = 10V − − 20 nA Capacitance CCE VCE = 10V, f = 1MHZ − 8 − pf VISO f = 60Hz, t = 1 min. 5300 − − VAC f = 60Hz, t = 1 sec. 7500 − − VAC 1011 − − Ω Isolation Characteristics Input−Output Isolation Voltage RMS Peak Isolation Resistance RISO VI−O = 500VDC Isolation Capacitance CISO VI−O = 0, f = 1MHz − 0.5 − pF CTR IF = 10mA, VCE = 10V 20 − − % − − 0.5 V − 2 − μs Transfer Characteristics DC Current Transfer Ratio Collector−Emitter Saturation Voltage VCEO(sat) IF = 50mA, IC = 2mA Switching Speeds TON, TOFF IF = 10mA, VCC = 10V, RL = 100Ω Note 1. Typical values at TA = +25°C. Pin Connection Diagram Anode 1 6 Base Cathode 2 5 Collector N.C. 3 4 Emitter 6 1 5 4 2 3 .260 (6.6) Max .070 (1.78) Max .350 (8.89) Max .200 (5.08) Max .085 (2.16) Max .300 (7.62) .350 (8.89) Max .100 (2.54)