NTE3033 Infrared Photodiode Description: The NTE3033 is a high output, high speed silicon photodiode mounted in a side−viewing plastic package with visible light cutoff filter. Features: D Visible Ray Cutoff Mold Type D High Speed Response D High Output Power Applications: D Optical Transmission D Optic Receiver Modules Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −30 to +70C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 to +80C Lead Temperature (During Soldering, 2mm from the package, 5sec Max.), TL . . . . . . . . . . . +260C Electro−Optical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Open Circuit Voltage VCC EV = 1000 1x, Note 1 Short Circuit Current Curve Factor Dark Current Capacitance Temperature Coefficient of VOC Temperature Coefficient of ISC Spectral Sensitivity ISC CF ID Ct at bt EV = 1000 1x, Note 1 Peak Emission Wavelength Half Angle P DQ VR = 10V V = 0V, f = 1MHz Min Typ Max Unit − 0.4 − V − 45 − 0.55 − − − − 30 − 49 − − −2.2 − − 0.18 − 700 ~ 1050 − − 1000 70 − − A − nA pF mV/C %/C nm nm deg Note 1. Color temperature = 2856K standard Tungsten lamp. Rev. 4−15 .276 (7.0) .111 (2.8) Device Center .315 (8.0) .197 (5.0) * .090 (2.3) Anode Cathode .024 (0.6) .512 (13.0) Min .016 (0.4) .200 (5.08) * Denotes Cathode mark