NTE3085 Optoisolator Photon Coupled Bilateral Analog FET Description: The NTE3085 consists of a gallium−aluminum−arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low AC and DC analog signals. Features: As A Remote Variable Resistor D ≤ 100Ω to ≥ 300MΩ D ≤ 15pF Shunt Capacitance D ≥ 100GΩ I/O Isolation Resistance Applications: As A Remote Variable Resistor D Isolated Variable Attenuator D Automatic Gain Control D Active Filter Fine Tuning/Band Switching As An Analog Signal Switch D Extremely Low Offset Voltage D 60VP−P Signal Capability D No Charge Injection or Latch−up D ton, toff ≤ 15μs As An Analog Signal Switch D Isolated Sample and Hold Circuit D Multiplexed, Optically Isolated A/D Conversion Absolute Maximum Ratings: (TA = +25°C, Note 1 unless otherwise specified) Infrared Emitting Diode Forward Current, IF Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Peak (10μs pulse, 1% duty cycle) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33mW/°C Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Photo Detector Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/°C Breakdown Voltage, V(BR)4−6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V Continuous Detector Current (either polarity, I4−6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±100mA Total Device Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +100°C Lead Temperature (During Soldering, for 10sec max.), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C Note 1. Stresses exceeding the “Absolute Maximum Ratings” may damage the device. The device may not function or be operated above the recommended operation conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operation conditions may affect device reliability. The “Absolute Maximum Ratings” are stress ratings only. Rev. 2−12 Electrical Characteristics: (TA = +25°C, Note 2 unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Infrared Emitting Diode Input Forward Voltage VF IF = 16mA − 1.3 1.75 V Reverse Leakage Current IR VR = 6V − − 10 μA Capacitance CJ V = 0, f = 1MHz − 50 − pF 30 − − V V4−6 = 15V, IF = 0 − − 50 nA V4−6 = 15V, IF = 0, TA = +100°C − − 50 μA Photo−Detector (Either Polarity) Breakdown Voltage V(BR)4−6 I4−6 = 10μA, IF = 0 Off−State Dark Current I4−6 Off−State Resistance R4−6 V4−6 = 15V, IF = 0 300 − − MΩ Capacitance C4−6 V4−6 = 0, IF = 0, f = 1MHz − − 15 pF R4−6 IF = 16mA, I4−6 = 100μA − − 200 W R6−4 IF = 16mA, I6−4 = 100μA − − 200 Ω IF = 16mA, I4−6 = 25μARMS, f = 1kHz − 2 − % IF = 16mA, RL = 50Ω, V4−6 = 5V − − 25 μs − − 25 μs Coupled Electrical Characteristics On−State Resistance Resistance, Non−Linearity and Asymmetry Turn−On Time ton Turn−Off Time toff Isolation Voltage VISO f = 60Hz, f = 1sec 7500 − − VACPEAK Isolation Resistance RISO VI−O = 500VDC 1011 − − Ω Isolation Capacitance CISO f = 1MHz − 0.2 − pF Note 2. All Typical values at TA = +25°C. 6 1 5 2 4 3 .260 (6.6) Max Anode 1 6 Drain Cathode 2 5 N.C. N.C. 3 4 Source .070 (1.78) Max .350 (8.89) Max .200 (5.08) Max .085 (2.16) Max .300 (7.62) .350 (8.89) Max .100 (2.54)